Effects of Processing Parameters on the Excimer Laser Deposition of Yba2Cu3O7-δ Thin Films

1989 ◽  
Vol 169 ◽  
Author(s):  
R. E. Muenchausen ◽  
X. D. Wu ◽  
R. C. Dye ◽  
K. M. Hubbard ◽  
R. C. Estler ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Energy ◽  
Processing Parameters ◽  
Spot Size ◽  
Laser Deposition ◽  
Angular Distributions ◽  
Superconducting Thin Films ◽  
Film Properties ◽  
Optimized Conditions

AbstractSystematic studies of the effects of pulsed laser deposition processing parameters on plume dynamics and resultant film properties have been performed. Plume angular distributions, cosm(θ), were observed to be variable between 1 > m > 15 depending on laser energy density and spot size. Under optimized conditions, epitaxial, superconducting thin films could be grown in‐situ on a variety of single‐crystal substrates. High quality, 2000 Å  ss thick films were obtained at deposition rates approaching 150 Å/sec.

scholarly journals Effects of Processing Parameters on the Laser Deposition of High Temperature Superconducting Thin Films

1990 ◽  
Vol 201 ◽  
Author(s):  
N. S. Nogar ◽  
R. Castain ◽  
R. C. Dye ◽  
S. Foltyn ◽  
R. E. Muenchausen ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
High Temperature Superconductor ◽  
Emission Spectra ◽  
Processing Parameters ◽  
Laser Deposition ◽  
Superconducting Thin Films ◽  
Ambient Oxygen ◽  
Superconductor Thin Films ◽  
Xecl Excimer Laser

AbstractY2O3 pressed powders were ablated by pulses from a XeCl excimer laser, operating at 308 nm, 150 mj/pulse, ≈15 nsec/pulse and 20 Hz. Emission spectra from Y∗ and YO∗ were recorded as a function of ambient oxygen pressure in the range 10−5 − 4×10−1 Torr, at a laser fluence of ≈ 4 J/cm2. A kinetic model is developed to describe the results, and the application to production of laser-deposited high-temperature superconductor thin films is discussed.

Study of In‐Situ Laser‐Deposition of Superconducting Thin Films by In‐Situ Resistance Measurement

1989 ◽  
Vol 169 ◽  
Author(s):  
Q.Y. Ying ◽  
H.S. Kim ◽  
D.T. Shaw ◽  
H.S. Kwok
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Final Stage ◽  
Temporal Change ◽  
Interface Reaction ◽  
Laser Deposition ◽  
Laser Evaporation ◽  
Superconducting Thin Films ◽  
Electric Resistance

AbstractThe electric resistance was measured in real time during laser evaporation deposition of superconducting thin films. It was found that different substrates led to different behaviors in the temporal change of the resistance. The results are consistent with the processes of nucleation, interface reaction and bulk‐like growth. Structural transformation was also observed due to oxygen backfilling at the final stage of the deposition.

Physics Of In-Situ Laser Deposition Of Superconducting Thin Films

1990 ◽  
Author(s):  
H. S. Kwok ◽  
D. T. Shaw ◽  
Q. Y. Ying ◽  
J. P. Zheng ◽  
S. Witanachchi ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Deposition ◽  
Superconducting Thin Films

In‐Situ Patterning and Critical Current Density Measurements in Laser Deposited High‐Tc Superconducting Thin Films

1989 ◽  
Vol 169 ◽  
Author(s):  
R. K. Singh ◽  
C. B. Lee ◽  
P. Tiwari ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Deposition Process ◽  
Laser Deposition ◽  
Zero Magnetic Field ◽  
Transport Critical Current Density ◽  
Superconducting Thin Films

AbstractWe have performed transport critical current density, Jc, measurements on epitaxial superconducting thin films which were in‐situ patterned during the laser deposition process. Shadow masks of various dimensions were placed close to the substrate to generate different patterns. Epitaxial films of YBa2Cu3O7 on (100) SrTiO3, (100) YSZ, and (100) LaA1O3 substrates were fabricated at low processing temperatures (500‐650°Q by the biased laser deposition technique in an oxygen ambient of 200 mtorr. Excellent quality superconducting thin films were formed on patterned areas. The critical temperature of the films was found to be in the range of 88 to 90 K, and the best critical current density values (at 77K, and zero magnetic field) greater than 6.5 x106 Amps/cm2 were obtained for silver doped YBa2Cu3O7 films on (100)LaAlO3 substrates.

Preparation of BaTiO3 thin films using pulsed KrF laser deposition and IN SITU laser annealing

1998 ◽  
Vol 20 (1-4) ◽  
pp. 87-94
Author(s):  
Atsushi Ito ◽  
Akihiko Machida ◽  
Minoru Obara
Keyword(s):  
Thin Films ◽  
Laser Annealing ◽  
Laser Deposition ◽  
Krf Laser

Epitaxial Growth of AlN Thin Films on Silicon and Sapphire by Pulsed Laser Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
R.D. Vispute ◽  
H. Wu ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Breakdown Field ◽  
Transmission Electron ◽  
Uv Visible ◽  
Relationship Of

ABSTRACTAIN thin films have been grown epitaxially on Si(111) and Al2O3(0001) substrates by pulsed laser deposition. These films were characterized by FTIR and UV-Visible, x-ray diffraction, high resolution transmission electron and scanning electron microscopy, and electrical resistivity. The films deposited on silicon and sapphire at 750-800°C and laser energy density of ∼ 2 to 3J/cm2 are epitaxial with an orientational relationship of AIN[0001]║ Si[111], AIN[2 110]║Si[011] and AlN[0001]║Al2O3[0001], AIN[1 2 1 0]║ Al2O3[0110] and AIN[1010] ║ Al2O3[2110]. The both AIN/Si and AIN/Al2O3 interfaces were found to be quite sharp without any indication of interfacial reactions. The absorption edge measured by UV-Visible spectroscopy for the epitaxial AIN film grown on sapphire was sharp and the band gap was found to be 6.1eV. The electrical resistivity of the films was about 5-6×l013Ω-cm with a breakdown field of 5×106V/cm. We also found that the films deposited at higher laser energy densities ≥10J/cm2 and lower temperatures ≤650°C were nitrogen deficient and containing free metallic aluminum which degrade the microstructural, electrical and optical properties of the AIN films

scholarly journals Superconducting thin films of MgB2 on Si by pulsed laser deposition

2001 ◽  
Vol 353 (1-2) ◽  
pp. 1-4 ◽  
Author(s):  
A. Brinkman ◽  
D. Mijatovic ◽  
G. Rijnders ◽  
V. Leca ◽  
H.J.H. Smilde ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Superconducting Thin Films
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