Epitaxial Growth of AlN Thin Films on Silicon and Sapphire by Pulsed Laser Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
R.D. Vispute ◽  
H. Wu ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Breakdown Field ◽  
Transmission Electron ◽  
Uv Visible ◽  
Relationship Of

ABSTRACTAIN thin films have been grown epitaxially on Si(111) and Al2O3(0001) substrates by pulsed laser deposition. These films were characterized by FTIR and UV-Visible, x-ray diffraction, high resolution transmission electron and scanning electron microscopy, and electrical resistivity. The films deposited on silicon and sapphire at 750-800°C and laser energy density of ∼ 2 to 3J/cm2 are epitaxial with an orientational relationship of AIN[0001]║ Si[111], AIN[2 110]║Si[011] and AlN[0001]║Al2O3[0001], AIN[1 2 1 0]║ Al2O3[0110] and AIN[1010] ║ Al2O3[2110]. The both AIN/Si and AIN/Al2O3 interfaces were found to be quite sharp without any indication of interfacial reactions. The absorption edge measured by UV-Visible spectroscopy for the epitaxial AIN film grown on sapphire was sharp and the band gap was found to be 6.1eV. The electrical resistivity of the films was about 5-6×l013Ω-cm with a breakdown field of 5×106V/cm. We also found that the films deposited at higher laser energy densities ≥10J/cm2 and lower temperatures ≤650°C were nitrogen deficient and containing free metallic aluminum which degrade the microstructural, electrical and optical properties of the AIN films

Pulsed Laser Deposition of Epitaxial (110) Tin Films on (100) Gaas - Processing, Characterization and Modeling

1993 ◽  
Vol 317 ◽  
Author(s):  
Tsvetanka Zheleva ◽  
K. Jagannadham ◽  
N. Biunno ◽  
J. Narayan
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Processing Parameters ◽  
Laser Deposition ◽  
Room Temperature Resistivity ◽  
X Ray Diffraction ◽  
Tin Films ◽  
Transmission Electron ◽  
Crystal Films ◽  
Relationship Of

ABSTRACTEpitaxial (110) titanium nitride films have been grown on (100) GaAs by pulsed laser deposition technique. The film quality has been found to be a strong function of the processing parameters. The films have been characterized using four point probe resistivity technique, Raman spectroscopy, X-ray diffraction analysis, and transmission electron Microscopy. Single crystal films were obtained at the deposition temperature 450° C and the room temperature resistivity was found to be 49.7 ΜΩ-cm. The epitaxial orientation relationship of the TiN films with the substrate is given by [001]TiN//[110] GaAs and [īlO]TiN// [līO]GaAs. Modeling studies have been performed to characterize the domain epitaxial growth in these large mismatch systems.

The effect of target crystallography on the growth of Pb(Mg1/3Nb2/3)O3 thin films using pulsed laser deposition

1999 ◽  
Vol 14 (6) ◽  
pp. 2355-2358 ◽  
Author(s):  
M. H. Corbett ◽  
G. Catalan ◽  
R. M. Bowman ◽  
J. M. Gregg
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Lead Magnesium

Pulsed laser deposition has been used to make two sets of lead magnesium niobate thin films grown on single-crystal h100j MgO substrates. One set was fabricated using a perovskite-rich target while the other used a pyrochlore-rich target. It was found that the growth conditions required to produce almost 100% perovskite Pb(Mg1/3Nb2/3)O3 (PMN) films were largely independent of target crystallography. Films were characterized crystallographically using x-ray diffraction and plan view transmission electron microscopy, chemically using energy dispersive x-ray analysis, and electrically by fabricating a planar thin film capacitor structure and monitoring capacitance as a function of temperature. All characterization techniques indicated that perovskite PMN thin films had been successfully fabricated.

scholarly journals Molybdenum thin films via pulsed laser deposition technique for first mirror application

2012 ◽  
Vol 30 (4) ◽  
pp. 559-567 ◽  
Author(s):  
A.T.T. Mostako ◽  
Alika Khare
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Optical Quality ◽  
Laser Deposition ◽  
X Ray ◽  
Interferometric Technique ◽  
Atomic Force ◽  
Deposition Parameters ◽  
Uv Visible

AbstractMirror like Molybdenum thin films on SS substrate in vacuum (10−3Pa) and in Helium environment has been achieved by Pulsed Laser Deposition (PLD) Technique. The PLD thin films of Molybdenum have been characterized by using X-ray Diffraction (XRD) pattern, Scanning Electron Microscope (SEM), Atomic Force Microscope (AFM) and Energy Dispersive X-ray (EDX). The specular reflectivity was recorded with Fourier Transform Infra-Red spectrometer and UV-Visible spectrometer. The optical quality of the thin films was tested via interferometric technique. At the optimum deposition parameters, the crystal orientation was in Mo(110) phase. The FIR-UV-Visible reflectivity of the mirror was found to be closed to that of the polished bulk Molybdenum and Stainless Substrate (SS) substrate.

scholarly journals Epitaxial growth of β-Ga2O3 thin films on Ga2O3 and Al2O3 substrates by using pulsed laser deposition

2019 ◽  
Vol 09 (04) ◽  
pp. 1950032 ◽  
Author(s):  
Yuxin An ◽  
Liyan Dai ◽  
Ying Wu ◽  
Biao Wu ◽  
Yanfei Zhao ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Optical Transmittance ◽  
Laser Deposition ◽  
Ultraviolet Region ◽  
X Ray Diffraction ◽  
Chemical Cleaning ◽  
Transmission Electron ◽  
Xrd Patterns

In this work, we have successfully grown high quality epitaxial [Formula: see text]-Ga2O3 thin films on [Formula: see text]-Ga2O3 (100) and Al2O3(0001) substrates using pulsed laser deposition (PLD). By optimizing temperature and oxygen pressure, the best conditions were found to be 650–700∘C and 0.5[Formula: see text]Pa. To further improve the quality of hetero-epitaxial [Formula: see text]-Ga2O3, the sapphire substrates were pretreated for atomic terraced surface by chemical cleaning and high temperature annealing. From the optical transmittance measurements, the films grown at 600–750∘C exhibit a clear absorption edge at deep ultraviolet region around 250–275[Formula: see text]nm wavelength. High resolution transmission electron microscope (HRTEM) images and X-ray diffraction (XRD) patterns demonstrate that [Formula: see text]-Ga2O3(-201)//Al2O3(0001) epitaxial texture dominated the epitaxial oxide films on sapphire substrate, which opens up the possibilities of high power electric devices.

A Simple and Effective Route to Annihilate Defects in Nanocrystalline SnO2 Thin Films Prepared by Pulsed Laser Deposition

2007 ◽  
Vol 1026 ◽  
Author(s):  
Zhiwen Chen ◽  
C. M. L. Wu ◽  
C. H. Shek ◽  
J. K. L. Lai ◽  
Z. Jiao ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Pulsed Laser Deposition ◽  
Gas Sensors ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Transmission Electron ◽  
Sno2 Thin Films

AbstractThe microstructural defects of nanocrystalline SnO2 thin films prepared by pulsed laser deposition have been investigated using transmission electron microscopy, high-resolution transmission electron microscopy and Raman spectroscopy. Defects inside nanocrystalline SnO2 thin films could be significantly reduced by annealing the SnO2 thin films at 300 °C for 2 h. High-resolution transmission electron microscopy showed that stacking faults and twins were annihilated upon annealing. In particular, the edges of the SnO2 nanoparticles demonstrated perfect lattices free of defects after annealing. Raman spectra also confirmed that annealing the specimen was almost defect-free. By using thermal annealing, defect-free nanocrystalline SnO2 thin films can be prepared in a simple and practical way, which holds promise for applications as transparent electrodes and solid-state gas sensors.

Pulsed LASER Deposition of MgO Thin Films

2012 ◽  
Vol 545 ◽  
pp. 38-42 ◽  
Author(s):  
Norlida Kamarulzaman ◽  
Nurhanna Badar
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Film Surface ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Thin Film Surface ◽  
193 Nm ◽  
Chamber Gas

MgO thin films were deposited by Pulsed Laser deposition using different process parameter. The characteristics were investigated via X-Ray diffraction (XRD), Scanning Electron Microscope (SEM) and Digital Holographic Microscope (DHM). It is found that the thin film surface morphology and thickness are different. It was found that the different process parameters such as chamber gas pressure, substrate temperature, LASER energy and number of pulses greatly influence the characteristics of the thin films obtained. The thin films have very low thicknesses of 97, 187 and 193 nm.

Synthesis and Characterization of Metal-Ceramic Thin Film Nanocomposites With Improved Mechanical Properties

2002 ◽  
Author(s):  
D. Kumar ◽  
N. Sudhir ◽  
S. Yarmolenko ◽  
Q. Wei ◽  
J. Sankar ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Transmission Electron ◽  
Thin Film Composites ◽  
Film Composites

Thin films composite materials consisting of metallic nanocrystals embedded in an insulator host have been synthesized using alternating-target pulsed laser deposition of Fe/Ni and Al2O3. The evaluation of structural quality of the thin film composites using high resolution transmission electron microscopy and scanning transmission electron microscopy with atomic number contrast has revealed the formation of a biphase system with thermodynamically driven segregation of Ni and alumina during pulsed laser deposition. The best hardness values of the thin film composites, measured using nanoindentation techniques, was found to 20–30% larger than pure alumina films fabricated under identical conditions. The improvement in values of hardness of Al2O3 thin films by embedding metal nanocrystals is related to the evolution of a microstructure which efficiently hinders the manipulation and movement of dislocation and the growth of microcracks, which in turn, is achieved by grain boundary hardening.

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