High Resolution Electron Microscopy of Defects in High-Dose Oxygen Implanted Silicon-On-Insulator Material

1990 ◽  
Vol 183 ◽  
Author(s):  
S. Visitserngtrakul ◽  
C. O. Jung ◽  
B. F. Cordts ◽  
P. Roitman ◽  
S. J. Krause
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Oxide Layer ◽  
Stacking Faults ◽  
High Resolution Electron Microscopy ◽  
Silicon On Insulator ◽  
High Dose ◽  
Wafer Temperature ◽  
Buried Oxide ◽  
Resolution Electron

AbstractHigh resolution electron microscopy (HREM) has been used to study the atomic arrangement of defects formed during high-dose oxygen implantation of silicon-on-insulator material. The effect of implantation parameters of wafer temperature, dose, and current density were investigated. Wafer temperature had the largest effect on the type and character of the defects. Above the buried oxide layer in the top silicon layer, HREM revealed that microtwins and stacking faults were created during implantation from 350–450°C. From 450–550°C, stacking faults were longer and microtwinning was reduced. From 550–700°C, a new type of defect was observed which had lengths of 40 to 140 nm and consisted of several discontinuous stacking faults which were randomly spaced and separated by two to eight atomic layers. We have referred to them as “multiply faulted defects” (MFDs). Beneath the buried oxide layer in the substrate region, the defects observed included stacking faults and ( 113 ) defects. The results indicated that some parts of the ( 1131 defects can assume a cubic diamond structure created through a twin operation across (115) planes. Details of the structure and formation mechanisms of MFDs and other defects will be discussed.

Structure of twinned {113} defects in high-dose oxygen implanted silicon-on-insulator material

1991 ◽  
Vol 6 (4) ◽  
pp. 792-795 ◽  
Author(s):  
Supapan Visitserngtrakul ◽  
Stephen J. Krause ◽  
John C. Barry
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Oxide Layer ◽  
High Resolution Electron Microscopy ◽  
Silicon On Insulator ◽  
High Dose ◽  
Diamond Structure ◽  
Bulk Silicon ◽  
Coherent Interface ◽  
Resolution Electron

Conventional and high resolution electron microscopy (HREM) were used to study the structure of {113} defects in high-dose oxygen implanted silicon. The defects are created with a density of 1011 cm−2 below the buried oxide layer in the substrate region. The HREM images of the {113} defects are similar to the ribbon-like defects in bulk silicon. It is proposed that there is a third possible structure of the defects, in addition to coesite and/or hexagonal structures. Portions of some defects exhibit the original cubic diamond structure which is twinned across {115} planes. The atomic model shows that the {115} interface is a coherent interface with alternating five- and seven-membered rings and no dangling bonds.

Twinning Structure of {113} Defects in High-Dose Oxygen Implanted Silicon-on-Insulator Material.

1989 ◽  
Vol 163 ◽  
Author(s):  
S. Visitserngtrakul ◽  
J. Barry ◽  
S. Krause
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Oxide Layer ◽  
High Resolution Electron Microscopy ◽  
Silicon On Insulator ◽  
High Dose ◽  
Diamond Structure ◽  
Bulk Silicon ◽  
Coherent Interface ◽  
Resolution Electron

AbstractConventional and high resolution electron microscopy (HREM) were used to study the structure of the {113} defects in high-dose oxygen implanted silicon. The defects are created with a density of 1011 cm-2 below the buried oxide layer in the substrate region. The {113} defects are similar to the ribbon-like defects in bulk silicon. Our HREM observations show that two crystalline phases are present in the defect. Portions of the defects exhibit the original cubic diamond structure which is twinned across {115} planes. The atomic model shows that the {115} interface is a coherent interface with alternating five- and seven-membered rings and no dangling bonds.

Interaction Between Basal Stacking Faults and Prismatic Inversion Domain Boundaries in GaN

2000 ◽  
Vol 639 ◽  
Author(s):  
Philomela Komninou ◽  
Joseph Kioseoglou ◽  
Eirini Sarigiannidou ◽  
George P. Dimitrakopulos ◽  
Thomas Kehagias ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Stacking Faults ◽  
High Resolution Electron Microscopy ◽  
High Energy ◽  
Low Energy ◽  
Inversion Domain ◽  
Resolution Electron ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

ABSTRACTThe interaction of growth intrinsic stacking faults with inversion domain boundaries in GaN epitaxial layers is studied by high resolution electron microscopy. It is observed that stacking faults may mediate a structural transformation of inversion domain boundaries, from the low energy types, known as IDB boundaries, to the high energy ones, known as Holt-type boundaries. Such interactions may be attributed to the different growth rates of adjacent domains of inverse polarity.

High Resolution Electron Microscopy of Sintered Ain

1982 ◽  
Vol 40 ◽  
pp. 546-547
Author(s):  
G. Van Tendeloo ◽  
G. Thomas
Keyword(s):  
Electron Microscopy ◽  
High Temperature ◽  
High Resolution ◽  
Stacking Faults ◽  
High Resolution Electron Microscopy ◽  
Tetrahedral Coordination ◽  
Temperature Behaviour ◽  
Resolution Electron ◽  
Suitable Form ◽  
Metal Ratio

Sialon ceramics are widely studied because of their industrial interest due to their high temperature behaviour. AIN, being one of the edge components, has obtained little attention up until now mainly because it is difficult to prepare in a suitable form; moreover, it is a very poor sintering material. Very little is known about the properties or the exact structure. Recently Komeya and Tsuge succeeded in sintering 90wt% A IN and 10wt% SiO2 at 2100°. All the known tetrahedral A IN polytypes are based on the 2H (wurtzite type) structure where A1 and N are in tetrahedral coordination. When the metal to non-metal ratio deviates from one, different polytypes are formed by creating periodic stacking faults every nth layer.

Comparative Oxidation Studies of Polycrystalline HP and CVD Silicon Carbides by TEM

1991 ◽  
Vol 49 ◽  
pp. 938-939
Author(s):  
J.S. Bow ◽  
M.J. Kim ◽  
R.W. Carpenter
Keyword(s):  
Electron Microscopy ◽  
High Temperature ◽  
Reaction Time ◽  
High Resolution ◽  
Oxide Layer ◽  
Crystalline Phase ◽  
High Resolution Electron Microscopy ◽  
Substrate Type ◽  
Resolution Electron ◽  
Silicon Carbides

The excellent oxidation resistance of SiC at high temperature results from formation of a protective SiO2 layer in a strongly oxidizing environment. The oxide layer is often initially amorphous, may transform to a crystalline phase for extended reaction time, especially crystobalite above 1200°C. Our objective is use of high resolution electron microscopy methods to determine the oxide layer microstructure dependence on SiC substrate type, and especially to investigate existence of an intermediate Si-O-C phase between the oxide layer and substrate.

Defect formation in oxygen-multiply implanted silicon-on-insulator material

1995 ◽  
Vol 53 ◽  
pp. 448-449
Author(s):  
J.C. Park ◽  
J.D. Lee ◽  
S.J. Krause
Keyword(s):  
Electron Microscopy ◽  
Defect Formation ◽  
High Resolution Electron Microscopy ◽  
Dark Field ◽  
Silicon On Insulator ◽  
High Dose ◽  
Plan View ◽  
Weak Beam ◽  
Resolution Electron ◽  
Reduced Power Consumption

High dose oxygen implantation (SIMOX) has been a successful fabrication technology of silicon-on-insulator (SOI) material for CMOS circuits with reduced power consumption and higher operating speed. However, high density (~108 cm-2) of the through-thickness defects (TTD) in the top Si layer of SIMOX is one of the most serious problems. Hill et al. reported multiple implant/anneal method to remarkably reduce defect densities to <104 cm-2. In the multiple implant/anneal material, however, ~106 cm2 of the final dominant defects, including stacking fault pyramids (SFP) and the precipitate-dislocation complexes (PDC), still remained after high temperature annealing. In this work, the microstructures and formation mechanism of the final defects were studied by various TEM techniques.Silicon (100) wafers were sequentially triple implanted to doses of 6/6/6×l017 at 200kev and 620°C. After each implantation the wafers were held at 1000°C for 2 hours and annealed at 1325°C for 4 hours in argon ambient plus 5% oxygen. Cross-section (XTEM) and plan-view (PTEM) transmission electron microscopy specimens were examined by using a weak beam dark field (WBDF) and high resolution electron microscopy (HREM) techniques in JEM 2000FX and Topcon 002B operating at 200kev.

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