Structure of twinned {113} defects in high-dose oxygen implanted silicon-on-insulator material
1991 ◽
Vol 6
(4)
◽
pp. 792-795
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Keyword(s):
Conventional and high resolution electron microscopy (HREM) were used to study the structure of {113} defects in high-dose oxygen implanted silicon. The defects are created with a density of 1011 cm−2 below the buried oxide layer in the substrate region. The HREM images of the {113} defects are similar to the ribbon-like defects in bulk silicon. It is proposed that there is a third possible structure of the defects, in addition to coesite and/or hexagonal structures. Portions of some defects exhibit the original cubic diamond structure which is twinned across {115} planes. The atomic model shows that the {115} interface is a coherent interface with alternating five- and seven-membered rings and no dangling bonds.
2004 ◽
Vol 53
(2)
◽
pp. 143-148
◽
1998 ◽
Vol 7
(2-5)
◽
pp. 222-227
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1991 ◽
Vol 49
◽
pp. 938-939
1995 ◽
Vol 53
◽
pp. 448-449
1989 ◽
Vol 47
◽
pp. 606-607
2007 ◽
Vol 131-133
◽
pp. 137-142
1983 ◽
Vol 41
◽
pp. 738-739
1983 ◽
Vol 41
◽
pp. 730-731