Threshold Voltage Shifts in Amorphous Silicon Thin Film Transistors under Bias Stress

1990 ◽  
Vol 192 ◽  
Author(s):  
Tetsu Ogawa ◽  
Sadayoshi Hotta ◽  
Horoyoshi Takezawa
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Charge Trapping ◽  
The Other ◽  
Time Dependent ◽  
Silicon Thin Film ◽  
Bias Stress

ABSTRACTThrough the time and temperature dependence measurements on threshold voltage shifts (Δ VT) in amorphous silicon thin film transistors, it has been found that two separate instability mechanisms exist; within short stress time ranges Δ Vτ increases as log t and this behavior corresponds to charge trapping in SiN. On the other hand, in long stress time ranges Δ VT increases as t t/4 and can be explained by time-dependent creation of trap in a-Si.

Effects of Top Insulator Overlap on the Stability in Hydrogenated Amorphous Silicon Thin Film Transistors

1994 ◽  
Vol 336 ◽  
Author(s):  
H.S. Choi ◽  
Y.S. Kim ◽  
S.K. Lee ◽  
J.K. Yoon ◽  
W.S. Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Charge Trapping ◽  
Channel Length ◽  
Gate Insulator ◽  
Silicon Thin Film ◽  
Bias Stress ◽  
Hydrogenated Amorphous

ABSTRACTThe effects of top-insulator on the instability problems of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) have been studied. In a-Si:H TFT with top-insulator (E/S type), charge trapping into the both of top-insulator and gate insulator has been shown under the bias stress.In order to investigate the charge trapping effects of top-insulator, we proposed a new method of Measurement. By this Method, we observed that trapped charges in top-insulator increased drain currents for positive gate bias stress, and this increment of drain currents was more serious with increasing the ratio of source/drain overlap length to channel length. It has founded that the instability problems of a-Si:H TFTs was attributed to the effects of top-insulator as well as that of gate insulator.

Turnaround Phenomenon of Threshold Voltage Shifts in Amorphous Silicon Thin Film Transistors under Negative Bias Stress

2000 ◽  
Vol 39 (Part 1, No. 10) ◽  
pp. 5763-5766 ◽  
Author(s):  
Chun-Yao Huang ◽  
Jun-Wei Tsai ◽  
Teh-Hung Teng ◽  
Cheng-Jer Yang ◽  
Huang-Chung Cheng
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Negative Bias ◽  
Silicon Thin Film ◽  
Bias Stress

Layout Dependence on Threshold Voltage Instability of Hydrogenated Amorphous Silicon Thin Film Transistors

2007 ◽  
Vol 46 (3B) ◽  
pp. 1318-1321 ◽  
Author(s):  
Huai-Yuan Tseng ◽  
Ko-Yu Chiang ◽  
Hau-Yan Lu ◽  
Chen-Pang Kung ◽  
Ting-Chang Chang
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Thin Film ◽  
Voltage Instability ◽  
Hydrogenated Amorphous

Temperature dependence of hydrogenated amorphous silicon thin-film transistors

1995 ◽  
Vol 30 (9) ◽  
pp. 2254-2256 ◽  
Author(s):  
Bor -Yir Chen ◽  
Wei -Hsiung Wu ◽  
Jiann -Ruey Chen ◽  
Chum -Sam Hong
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Thin Film ◽  
Hydrogenated Amorphous

Threshold Voltage Shift of Amorphous Silicon Thin-Film Transistors During Pulse Operation

1991 ◽  
Vol 30 (Part 1, No. 12B) ◽  
pp. 3719-3723 ◽  
Author(s):  
Ryoji Oritsuki ◽  
Toshikazu Horii ◽  
Akira Sasano ◽  
Ken Tsutsui ◽  
Toshiko Koizumi ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Silicon Thin Film ◽  
Pulse Operation ◽  
Threshold Voltage Shift ◽  
Voltage Shift
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