Deposition of a-Ge:H in a Remote Plasma System

1990 ◽  
Vol 192 ◽  
Author(s):  
M. Heintze ◽  
C. E. Nebel ◽  
G. H. Bauer
Keyword(s):  
Fermi Level ◽  
Structural Properties ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Defect Density ◽  
Plasma Deposition ◽  
Optical Emission ◽  
Deposition Process ◽  
Remote Plasma ◽  
Plasma System

ABSTRACTThe remote plasma deposition process was studied by optical emission spectroscopy using Ne and N2 to detect He-metastables. a- Ge:H was prepared and its optoelectronic and structural properties were characterized. AM 1.5 photoconductivities around 10−6(Ωcm)−1 were obtained in intrinsic material with the Fermi level position lying near midgap. However, even in the best film the defect density is higher than 1017cm−3.

Optical emission spectroscopy of lead sulfide films plasma deposition

2020 ◽  
Vol 241 ◽  
pp. 118629 ◽  
Author(s):  
Leonid Mochalov ◽  
Dominik Dorosz ◽  
Marcin Kochanowicz ◽  
Alexander Logunov ◽  
Aleksey Letnianchik ◽  
...  
Keyword(s):  
Lead Sulfide ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Plasma Deposition ◽  
Optical Emission

Behavior of Various Organosilicon Molecules in PECVD Processes for Hydrocarbon-Doped Silicon Oxide Films

2007 ◽  
Vol 124-126 ◽  
pp. 347-350 ◽  
Author(s):  
Yong Sup Yun ◽  
Takanori Yoshida ◽  
Norifumi Shimazu ◽  
Yasushi Inoue ◽  
Nagahiro Saito ◽  
...  
Keyword(s):  
Chemical Bonding ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Optical Emission ◽  
Deposition Process ◽  
Doped Silicon ◽  
Oxygen Atoms

Plasma diagnosis was performed by means of optical emission spectroscopy in the plasma-enhanced chemical vapor deposition process for preparation of hydrocarbon-doped silicon oxide films. The chemical bonding states were characterized by a fourier-transform infrared spectrometer. Based on the results of the diagnosis in organosilane plasma and the chemical bonding states, a reaction model for the formation process of hydrocarbon-doped silicon oxide films was discussed. From the results of optical emission spectroscopy, we found that the oxygen atoms of methoxy groups in TMMOS molecules can be dissociated easily in the plasma and behave as a kind of oxidizing agent. Siloxane bondings in HMDSO, on the other hand, hardly expel oxygen atoms.

scholarly journals Modeling and Measurement of Submicron Particles in RF Plasmas in Ar

1995 ◽  
Vol 48 (3) ◽  
pp. 439
Author(s):  
Y Hosokauia ◽  
T Kitajima ◽  
T Makabe
Keyword(s):  
Emission Spectroscopy ◽  
Continuum Model ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Particle Growth ◽  
Mie Scattering ◽  
Submicron Particles ◽  
Rf Plasma ◽  
Plasma System ◽  
Rf Plasmas

The work is focused on the growth and transport of submicron particles in nonreactive radiofrequency plasma in Ar at 13�56 MHz, studied by numerical modeling using the relaxation continuum model, and by experiment using spatiotemporally resolved optical emission spectroscopy with Mie scattering. The particle growth/decay under conditions of the initially injected (CF2)n, and the related spatiotemporal change of the rf plasma structure, are discussed in terms of their numerical and experimental results. The results give suggestions with respect to the influence of particles in a dusty rf plasma system, such as dry etching and sputtering.

Optical emission spectroscopy study on deposition process of microcrystalline silicon

2006 ◽  
Vol 15 (11) ◽  
pp. 2713-2717 ◽  
Author(s):  
Wu Zhi-Meng ◽  
Lei Qing-Song ◽  
Geng Xin-Hua ◽  
Zhao Ying ◽  
Sun Jian ◽  
...  
Keyword(s):  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Deposition Process ◽  
Spectroscopy Study ◽  
Microcrystalline Silicon

Optical emission spectroscopy during the bias-enhanced nucleation of diamond microcrystals by microwave plasma chemical vapor deposition process

1996 ◽  
Vol 11 (11) ◽  
pp. 2852-2860 ◽  
Author(s):  
H. C. Barshilia ◽  
B. R. Mehta ◽  
V. D. Vankar
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Optical Emission ◽  
Deposition Process ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

Microwave plasma chemical vapor deposition (MWPCVD) process has been used to grow diamond thin films on silicon substrates from CH4–H2 gas mixture. Bias-enhanced nucleation (BEN) pretreatment has been used to increase the density of diamond nuclei. Various species in the CH4–H2 plasma have been identified using optical emission spectroscopy (OES), and their effect on the film microstructure has been studied. During the pretreatment process the emission intensities of CH, CH+, C2, H, and H2* species have been found to increase significantly for a negative dc bias voltage |VB| > 60 V. The higher concentration of excited species and the associated effects play a significant role in the growth process. A very thin layer of a-C containing predominant sp3 bonded carbon species in the initial stages of the growth is found to be present in these films. The microstructure of the films has been found to be very sensitive to the biasing conditions.

The Effects of the Addition of CF4, Cl2, and N2 TO O2 ECR Plasma on the ETCH Rate, Selectivity and Etched Profile of RuO2 Film

1997 ◽  
Vol 493 ◽  
Author(s):  
Eung-Jik Lee ◽  
Jong-Sam Kim ◽  
Jin-Woong Kim ◽  
Ki-Ho Baik ◽  
Won-Jong Lee
Keyword(s):  
Cyclotron Resonance ◽  
Emission Spectroscopy ◽  
Etch Rate ◽  
Oxygen Radicals ◽  
Optical Emission Spectroscopy ◽  
Electron Cyclotron Resonance ◽  
Optical Emission ◽  
Quadrupole Mass ◽  
Plasma System ◽  
Ecr Plasma

ABSTRACTIn this study, we investigated the effects of the addition of CF4, Cl2, and N2 gases to oxygen electron cyclotron resonance (ECR) plasma on the reactive ion etching (RIE) properties of RuO2 film such as etch rate, selectivity, and etched profile. The concentration of the etching species in the plasma was analyzed with an optical emission spectroscopy (OES) and a quadrupole mass spectrometer (QMS). The etch product was also examined with QMS.The addition of a small amount of CF4, Cl2, or N2 to the O2 plasma increases the concentration of oxygen radicals and accordingly increases the etch rate of the RUO2 films appreciably. The etch rate of the RuO2 film was enhanced more with the addition of a small amount of CF4 and CI2 than with the addition of N2. On the contrary, the etched profile obtained in O2/N2 plasma was superior, without any damaged layer at the sidewall, to O2/CF4 and O2/Cl2 plasma. The selectivity of RuO2 to Si)2 mask was over 20:1 for each of the additive gas proportion at which the etch rate was maximum for each plasma system.

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