Identification of phase transformation using optical emission spectroscopy for direct metal deposition process

Plasma diagnosis was performed by means of optical emission spectroscopy in the plasma-enhanced chemical vapor deposition process for preparation of hydrocarbon-doped silicon oxide films. The chemical bonding states were characterized by a fourier-transform infrared spectrometer. Based on the results of the diagnosis in organosilane plasma and the chemical bonding states, a reaction model for the formation process of hydrocarbon-doped silicon oxide films was discussed. From the results of optical emission spectroscopy, we found that the oxygen atoms of methoxy groups in TMMOS molecules can be dissociated easily in the plasma and behave as a kind of oxidizing agent. Siloxane bondings in HMDSO, on the other hand, hardly expel oxygen atoms.

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Optical emission spectroscopy study on deposition process of microcrystalline silicon

Chinese Physics ◽

10.1088/1009-1963/15/11/042 ◽

2006 ◽

Vol 15 (11) ◽

pp. 2713-2717 ◽

Cited By ~ 3

Author(s):

Wu Zhi-Meng ◽

Lei Qing-Song ◽

Geng Xin-Hua ◽

Zhao Ying ◽

Sun Jian ◽

...

Keyword(s):

Emission Spectroscopy ◽

Optical Emission Spectroscopy ◽

Optical Emission ◽

Deposition Process ◽

Spectroscopy Study ◽

Microcrystalline Silicon

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Deposition of a-Ge:H in a Remote Plasma System

MRS Proceedings ◽

10.1557/proc-192-565 ◽

1990 ◽

Vol 192 ◽

Cited By ~ 3

Author(s):

M. Heintze ◽

C. E. Nebel ◽

G. H. Bauer

Keyword(s):

Fermi Level ◽

Structural Properties ◽

Emission Spectroscopy ◽

Optical Emission Spectroscopy ◽

Defect Density ◽

Plasma Deposition ◽

Optical Emission ◽

Deposition Process ◽

Remote Plasma ◽

Plasma System

ABSTRACTThe remote plasma deposition process was studied by optical emission spectroscopy using Ne and N2 to detect He-metastables. a- Ge:H was prepared and its optoelectronic and structural properties were characterized. AM 1.5 photoconductivities around 10−6(Ωcm)−1 were obtained in intrinsic material with the Fermi level position lying near midgap. However, even in the best film the defect density is higher than 1017cm−3.

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Optical emission spectroscopy during the bias-enhanced nucleation of diamond microcrystals by microwave plasma chemical vapor deposition process

Journal of Materials Research ◽

10.1557/jmr.1996.0360 ◽

1996 ◽

Vol 11 (11) ◽

pp. 2852-2860 ◽

Cited By ~ 17

Author(s):

H. C. Barshilia ◽

B. R. Mehta ◽

V. D. Vankar

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Emission Spectroscopy ◽

Optical Emission Spectroscopy ◽

Microwave Plasma ◽

Chemical Vapor ◽

Optical Emission ◽

Deposition Process ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition

Microwave plasma chemical vapor deposition (MWPCVD) process has been used to grow diamond thin films on silicon substrates from CH4–H2 gas mixture. Bias-enhanced nucleation (BEN) pretreatment has been used to increase the density of diamond nuclei. Various species in the CH4–H2 plasma have been identified using optical emission spectroscopy (OES), and their effect on the film microstructure has been studied. During the pretreatment process the emission intensities of CH, CH+, C2, H, and H2* species have been found to increase significantly for a negative dc bias voltage |VB| > 60 V. The higher concentration of excited species and the associated effects play a significant role in the growth process. A very thin layer of a-C containing predominant sp3 bonded carbon species in the initial stages of the growth is found to be present in these films. The microstructure of the films has been found to be very sensitive to the biasing conditions.

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