Computer Simulation of the Metal Organic Chemical Vapor Deposition of CdTe

1990 ◽  
Vol 198 ◽  
Author(s):  
S. Kang ◽  
T.J. Jasinski ◽  
G.S. Tompa ◽  
R.A. Stall
Keyword(s):  
Computer Simulation ◽  
Chemical Vapor Deposition ◽  
Process Parameters ◽  
Vapor Deposition ◽  
High Speed ◽  
Chemical Vapor ◽  
Operating Conditions ◽  
Organic Chemical ◽  
Influence Of Process Parameters ◽  
Process Gas

ABSTRACTThe optimization of chemical vapor deposition processes requires an understanding of the influence of various process parameters on the deposition of thin films. A recently developed computer simulation tool provides a powerful means to develop this understanding. This paper describes the use of the computer program, FLUENT, to study the gas flow, temperature, and chemical species distributions during the deposition of CdTe. Numerical results are reported for two operating conditions for an EMCORE vertical high-speed rotating disk growth reactor and are compared to experimental data. The influence of process parameters is discussed. The effects of the addition of significant amounts of Hg (several percent) to the process gas is evaluated.

scholarly journals Stability Analysis of Multi Process Parameters for Metal-Organic Chemical Vapor Deposition Reaction Cavity

Molecules ◽  
2019 ◽  
Vol 24 (5) ◽  
pp. 876 ◽  
Author(s):  
Jian Li ◽  
Ziling Wu ◽  
Yifeng Xu ◽  
Yanli Pei ◽  
Gang Wang
Keyword(s):  
Chemical Vapor Deposition ◽  
Process Parameters ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Reaction Chamber ◽  
Operating Conditions ◽  
Organic Chemical ◽  
Carrier Gas ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

The parameters for metal-organic chemical vapor deposition (MOCVD) processes significantly influence the properties of ZnO films, especially the flow stability of the chamber, which is caused by process parameters such as the shape of reaction chamber, the working pressure, the growth temperature, the susceptor rotational speed, the gas flow rate, and the nature of the carrier gas at inlet temperature. These parameters are the preconditions for the formation of high-quality film. Therefore, this study uses Ar as a carrier gas, diethylzinc (DEZn) as a Zn source, and H2O as an oxygen source and adopts the reaction mechanism calculated by quantum chemistry, which includes ten gas reactions and eight surface reactions. The process parameters of a specific reaction chamber model were analyzed based on the computational fluid dynamics method. This study also presents an accurate prediction of the flow regime in the reactor chamber under any operating conditions, without additional experiments, based on an analysis of a great quantity of simulation data. Such research is also significant for selecting the growth parameters relevant to production, providing a specific process growth window, narrowing the debugging scope, and providing a theoretical basis for the development of MOCVD equipment and process debugging.

A Numerical and Experimental Study on the Fabrication GaN Films by Chemical Vapor Deposition

2019 ◽  
Vol 142 (1) ◽  
Author(s):  
Sun Wong ◽  
Yogesh Jaluria
Keyword(s):  
Chemical Vapor Deposition ◽  
Computational Model ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Reactor Design ◽  
Film Deposition ◽  
Operating Conditions ◽  
Chamber Pressure ◽  
Organic Chemical

Abstract Computational modeling and simulation are employed to study a rotating susceptor vertical impinging chemical vapor deposition (CVD) reactor to predict GaN film deposition. Many metal-organic chemical vapor deposition reactor manufacturers use prior experience to design and fabricate CVD reactors without a fundamental basis for the process and information on the optimal conditions for the deposition. Through trial and error, they fine tune the gas flow parameters, heater temperatures, chamber pressure, and concentration of species gases for optimal growth. However, expensive raw precursor gas and time are wasted through this method. A computational model is an important step in the CVD reactor design and GaN growth prediction. It can be used to model and optimize the reactor to yield favorable operating conditions. In this paper, a simple geometry consisting of a rotating susceptor and flow guide is considered. The focus is on gallium nitride (GaN) thin films. The study shows how the computational model can benefit reactor design. It also presents comparisons between model prediction results and experimental data from a physical, practical, system. Commercially available software is used, with appropriate modifications, and the results obtained are discussed in detail.

Recent Progress in the Growth of Mid-ir Emitters by Metalorganic Chemical Vapor Deposition

1997 ◽  
Vol 484 ◽  
Author(s):  
R. M. Biefeld ◽  
A. A. Allerman ◽  
S. R. Kurtz ◽  
K. C. Baucom
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Speed ◽  
Recent Progress ◽  
Chemical Vapor ◽  
Active Regions ◽  
Rotating Disk ◽  
Organic Chemical ◽  
Type I ◽  
Multi Stage

AbstractWe report on recent progress and improvements in the metal-organic chemical vapor deposition (MOCVD) growth of mid-infrared lasers and using a high speed rotating disk reactor (RDR). The devices contain AlAsSb claddings and strained InAsSb active regions. These lasers have multi-stage, type I InAsSb/InAsP quantum well active regions. A semi-metal GaAsSb/InAs layer acts as an internal electron source for the multi-stage injection lasers and AlAsSb is an electron confinement layer. These structures are the first MOCVD multi-stage devices. Growth in an RDR was necessary to avoid the previously observed Al memory effects found in conventional horizontal reactors. A single stage, optically pumped laser yielded improved power (> 650 mW/facet) at 80 K and 3.8 μm. A multi-stage 3.8–3.9 μm laser structure operated up to T=170 K. At 80 K, peak power > 100 mW and a high slope-efficiency were observed in gain guided lasers.

In‐situ growth of yba2cu3o7‐x films by metal organic chemical vapor deposition using vertical, high‐speed rotating disk reactor.

1989 ◽  
Vol 169 ◽  
Author(s):  
D. W. Noh ◽  
B. Gallois ◽  
Y. Q. Li ◽  
C. Chern ◽  
B. Rear ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Speed ◽  
Chemical Vapor ◽  
Rotating Disk ◽  
Organic Chemical ◽  
Axis Orientation ◽  
Rotating Disk Reactor ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractSuperconducting thin films of YBa2Cu307‐x were grown on MgO (100) and YSZ(IOO) substrates without post‐annealing by metal organic chemical vapor deposition using vertical, high‐speed (1100 rpm) rotating disk reactor. The source materials were Y(tmhd)3, Ba(tmhd)2, and Cu(tmhd)2, which were kept at 135 °C, 240 °C, and 120 °C respectively. The precursors were transported using nitrogen as the carrier gas and introduced separately into the cylindrical stainless steel reaction chamber, which was maintained at 60 torr. The oxygen partial pressure was 30 Torr. The substrates were heated resistively at 800°C. After growth, the films were cooled down at a rate of 5 °C/min under 1 atmospheric pressure of pure oxygen. The X‐ray diffraction pattern of the films showed primarily an orientation of c‐axis perpendicular to the substrates, with weak peaks of (hoo) corresponding to a‐axis orientation. Scanning Electron Microscopy of the films showed a well‐developed a‐axis and c‐axis plate‐like structure which appeared as rectangular micron‐sized features on the MgO surface. On the YSZ substrates a‐axis and c‐axis plate‐like projections were also observed, with the dense plate‐like c‐axis orientation dominant. Four probe resistance measurements showed Tc(R=0) at 91.8 K(△TC=2.2 K) and 85 K (△TC=7 K) on YSZ and MgO substrates respectively.

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