X-Ray Diffraction Study of Cubic Boron Nitride Grown Epitaxially on Silicon
Keyword(s):
X Ray
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ABSTRACTWe report the growth of boron nitride films on (001), (110), and (111) faces of silicon using the method of pulsed excimer laser ablation. The structure of the Alms grown on the (001) and (110) orientations of Si is cubic zincblende with a lattice constant of 3.619 Å. The films were found to be heteroepitaxial on silicon (001) with the cubic BN (100) axes parallel to Si (100), as characterized by x-ray diffraction and high-resolution transmission electron microscopy. In that system, we find evidence for an unusual 3:2 commensurate lattice matching. The films appear to cubic but randomly oriented on the Si (110), and no evidence for crystallinity is found for films grown on Si (111).
2007 ◽
Vol 7
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2020 ◽
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pp. 25
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2012 ◽
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