Microstructure of Epitaxial Al(111)/Si(111) Films Studied by Synchrotron Grazing Incidence X-Ray Diffraction

1990 ◽  
Vol 208 ◽  
Author(s):  
H. H. Hung ◽  
K. S. Liang ◽  
C. H. Lee ◽  
T.-M. Lu
Keyword(s):  
Annealed Film ◽  
Grazing Incidence ◽  
Misfit Strain ◽  
Interfacial Structure ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray ◽  
Incommensurate Structure ◽  
Before And After ◽  
Beam Deposition

ABSTRACTWe report the results of our x-ray diffraction studies on epitaxial Al(lll)/Si(lll) films prepared by the partially ionized beam deposition technique. Significant changes were observed in intensity profiles for samples before and after annealing. In the in-plane radial scan of Al(220) peak, the shift of Bragg peak is shown due to misfit strain. A weak satellite is also observed which indicates a semicoherent interfacial structure of the annealed film with misfit dislocations. A possible picture of misfit-induced incommensurate structure of Al films is discussed.

Microstructure of Epitaxial Al(111)/Si(111) Films Studied by Synchrotron Grazing Incidence X-Ray Diffraction

1990 ◽  
Vol 202 ◽  
Author(s):  
H. H. Hung ◽  
K. S. Liang ◽  
C. H. Lee ◽  
T.-M. Lu
Keyword(s):  
Annealed Film ◽  
Grazing Incidence ◽  
Misfit Strain ◽  
Interfacial Structure ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray ◽  
Incommensurate Structure ◽  
Before And After ◽  
Beam Deposition

ABSTRACTWe report the results of our x-ray diffraction studies on epitaxial Al(111)/Si(111) films prepared by the partially ionized beam deposition technique. Significant changes were observed in intensity profiles for samples before and after annealing. In the in-plane radial scan of Al(220) peak, the shift of Bragg peak is shown due to misfit strain. A weak satellite is also observed which indicates a semicoherent interfacial structure of the annealed film with misfit dislocations. A possible picture of misfit-induced incommensurate structure of Al films is discussed.

Interfacial Composition and Structure in Pt/Ni and Pt/Nb Multilayer Films

1990 ◽  
Vol 187 ◽  
Author(s):  
J.A. Bain ◽  
B.M. Clemens ◽  
S. Brennan
Keyword(s):  
Lattice Spacing ◽  
Grazing Incidence ◽  
Multilayer Films ◽  
Interfacial Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Composition And Structure ◽  
Interfacial Composition ◽  
Alloying Effects ◽  
Coherent Interfaces

AbstractThe interfacial structure of Pt/Nb and Pt/Ni sputtered multilayer films was studied using x-ray diffraction in symmetric, asymmetric, and grazing incidence modes. The grazing incidence and asymmetric diffraction were used to distinguish alloying effects on the lattice spacing from strain in the films. This strain was shown to be consistent with semi-coherent interfaces in the Pt/Ni but not in the Pt/Nb in which another strain generating mechanism dominates.

Interfacial Superstructures Studied by Grazing Incidence X-Ray Diffraction

1989 ◽  
Vol 159 ◽  
Author(s):  
Koichi Akimoto ◽  
Jun'Ichiro Mizuki ◽  
Ichiro Hirosawa ◽  
Junji Matsui
Keyword(s):  
Synchrotron Radiation ◽  
Direct Observation ◽  
Molecular Beam ◽  
Solid Phase ◽  
Grazing Incidence ◽  
Deposition Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Molecular Beam Deposition ◽  
Beam Deposition

ABSTRACTSurface superstructures (reconstructed structures) have been observed by many authors. However, it is not easy to confirm that a superstructure does exist at an interface between two solid layers. The present paper reports a direct observation, by a grazing incidence x-ray diffraction technique with use of synchrotron radiation, of superstructures at the interface. Firstly, the boron-induced R30° reconstruction at the Si interface has been investigated. At the a Si/Si(111) interface, boron atoms at 1/3 ML are substituted for silicon atoms, thus forming a R30° lattice. Even at the interface between a solid phase epitaxial Si(111) layer and a Si(111) substrate, the boron-induced R30° reconstruction has been also observed. Secondly, SiO2/Si(100)-2×l interfacial superstructures have been investigated. Interfacial superstructures have been only observed in the samples of which SiO2 layers have been deposited with a molecular beam deposition method. Finally, the interfaces of MOCVD-grown AIN/GaAs(100) have been shown to have 1×4 and 1×6 superstructures.

Comparative Study of Structural Damage Under Irradiation in SiC Nanostructured and Conventional Ceramics

2006 ◽  
Vol 981 ◽  
Author(s):  
Yann Leconte ◽  
Isabelle Monnet ◽  
Marc levalois ◽  
Magali Morales ◽  
Xavier Portier ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Energy Loss ◽  
Structural Damage ◽  
Nuclear Energy ◽  
Nuclear Reactors ◽  
Grazing Incidence ◽  
New Materials ◽  
X Ray Diffraction ◽  
X Ray ◽  
Before And After

AbstractIn the context of research on new materials for next generation nuclear reactors, it becomes more and more interesting to know what can be the advantages of nanostructured materials for such applications. In this study, we performed irradiation experiments on microstructured and nanostructured â-SiC samples, with 95 MeV Xe and 4 MeV Au ions. The structure of the samples was characterized before and after irradiation by grazing incidence X ray diffraction and Raman spectroscopy. The results showed the occurrence of a synergy between electronic and nuclear energy loss in both samples with 95 MeV Xe ions, while the nanostructured pellet was found to have a better resistance to the irradiation with 4 MeV Au ions.

Interface Structure of Epitaxial Nb Films on Sapphire: Grazing Incidence X-Ray Diffraction and X-Ray Reflectivity Studies

1990 ◽  
Vol 209 ◽  
Author(s):  
C. H. Lee ◽  
K. S. Liang ◽  
F. S. Shieu ◽  
S.L. Sass ◽  
C. P. Flynn
Keyword(s):  
Grazing Incidence ◽  
Interface Structure ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Buried Interfaces ◽  
Diffraction Effects

ABSTRACTThe interface structure of MBE grown Nb films on sapphire substrates was studied using grazing incidence x-ray diffraction and x-ray reflectivity measurements. Specifically, the use of these x-ray techniques in probing the buried interfaces was demonstrated. Diffraction effects were observed which are consistent with the presence of misfit dislocations in the interface.

Grazing-incidence wide-angle X-ray diffraction study on molecular aggregation state of imprinted polyimide film before and after hard baking

2012 ◽  
Vol 70 (1) ◽  
pp. 105-115 ◽  
Author(s):  
Sudu Siqing ◽  
Hui Wu ◽  
Hiroki Yamaguchi ◽  
Takamichi Shinohara ◽  
Osami Sakata ◽  
...  
Keyword(s):  
Diffraction Study ◽  
Grazing Incidence ◽  
Polyimide Film ◽  
Molecular Aggregation ◽  
Wide Angle ◽  
X Ray Diffraction ◽  
Aggregation State ◽  
X Ray ◽  
Before And After

scholarly journals X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates

2013 ◽  
Vol 46 (4) ◽  
pp. 868-873 ◽  
Author(s):  
Peter Zaumseil ◽  
Grzegorz Kozlowski ◽  
Yuji Yamamoto ◽  
Markus Andreas Schubert ◽  
Thomas Schroeder
Keyword(s):  
Tensile Strain ◽  
Chemical Vapour ◽  
Grazing Incidence ◽  
Silicon On Insulator ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Soi Substrates ◽  
Nanostructured Si

On the way to integrate lattice mismatched semiconductors on Si(001), the Ge/Si heterosystem was used as a case study for the concept of compliant substrate effects that offer the vision to be able to integrate defect-free alternative semiconductor structures on Si. Ge nanoclusters were selectively grown by chemical vapour deposition on Si nano-islands on silicon-on-insulator (SOI) substrates. The strain states of Ge clusters and Si islands were measured by grazing-incidence diffraction using a laboratory-based X-ray diffraction technique. A tensile strain of up to 0.5% was detected in the Si islands after direct Ge deposition. Using a thin (∼10 nm) SiGe buffer layer between Si and Ge the tensile strain increases to 1.8%. Transmission electron microscopy studies confirm the absence of a regular grid of misfit dislocations in such structures. This clear experimental evidence for the compliance of Si nano-islands on SOI substrates opens a new integration concept that is not only limited to Ge but also extendable to semiconductors like III–V and II–VI materials.

Grazing-Incidence X-Ray Diffraction Studies of the Relaxation Behavior in Galnas/GaAs Multilayers Grown on GaAs[001]

1995 ◽  
Vol 379 ◽  
Author(s):  
Dirk Rose ◽  
Ullrich Pietsch
Keyword(s):  
Angular Position ◽  
Grazing Incidence ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray ◽  
Grazing Incidence Diffraction ◽  
Gaas Barrier ◽  
Out Of Plane ◽  
Orientational Distribution ◽  
Average Size

ABSTRACTThe depth profile of the defect structure in strained and partially relaxed Ga0.8In0.2As/GaAs[001] multilayers is investigated with the method of X-ray grazing-incidence diffraction. Both in-plane and out-of-plane parameters are obtained from the subsurface region between five and a few hundred nm.The strength of the method is demonstrated on a sample series with similar thickness of the Ga0.8In0.2As sublayers, ta, but with varying thickness of the GaAs barrier, tb.The degree of relaxation R is directly obtained from the angular position of the in-plane Bragg peaks. For decreasing ta the peak maximum shifts to smaller angles which indicates an increase of R. Additionally the peak width is enlarged. This is explained by the orientational distribution of strain-reduced microdomains which are formed during the relaxation process. Their average size is estimated from the shape of the truncation rods which are recorded at the angular position of the in-plane Braggpeaks. The resulting size of about 100nm is additionally verified by high-resolution X-ray diffraction. The existence of microdomains is caused by a cross-hatched network of 60° misfit dislocations which is confirmed by TEM-measurements.

Unique x‐ray diffraction pattern at grazing incidence from misfit dislocations in SiGe thin films

1996 ◽  
Vol 80 (1) ◽  
pp. 89-96 ◽  
Author(s):  
J. L. Jordan‐Sweet ◽  
P. M. Mooney ◽  
M. A. Lutz ◽  
R. M. Feenstra ◽  
J. O. Chu ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffraction Pattern ◽  
Grazing Incidence ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray

Characterization of Epitaxial Films by Grazing-Incidence X-Ray Diffraction

1986 ◽  
Vol 77 ◽  
Author(s):  
Armin Segmüller
Keyword(s):  
Film Growth ◽  
Grazing Incidence ◽  
Misfit Strain ◽  
Epitaxial Films ◽  
X Ray Diffraction ◽  
Diffraction Intensity ◽  
X Ray ◽  
Growth Plane ◽  
Structural Details

ABSTRACTGrazing-incidence x-ray diffraction, a surface-sensitive technique, has been used to obtain structural details parallel to the interface of an epitaxial system, such as lattice parameters, strain, crystallite size and orientation, on films with thicknesses ranging down to a few mono-atomic layers. Tungsten grows epitaxially on the (1102) plane of sapphire, with the orientation W (001) ∥ Al2O3 (1102) and W [110] ∥ Al2O, [1120]. Sufficient diffraction intensity for characterization could be obtained from ∼30A-thick W films. Layers of GaAs can be grown epitaxially on the basal plane of sapphire with the orientation GaAs(111) ∥ Al2O3(00.1) and GaAs [110] ∥ Al2O3[1120]. Niobium films grow on GaAs (001) and (111) substrates with a (001) plane parallel to the interface, whereas molybdenum films prefer to grow with a (111) plane on both substrates. The best orientation, i. e. the smallest mosaic spread, of the film is obtained when the substrate plane has the same symmetry as the preferred film growth plane. In all these cases with relatively large misfit, the strain observed parallel to the interface is only a small fraction of the theoretical misfit strain, indicating the relief of the misfit strain within the first few atomic layers.

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