X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates

On the way to integrate lattice mismatched semiconductors on Si(001), the Ge/Si heterosystem was used as a case study for the concept of compliant substrate effects that offer the vision to be able to integrate defect-free alternative semiconductor structures on Si. Ge nanoclusters were selectively grown by chemical vapour deposition on Si nano-islands on silicon-on-insulator (SOI) substrates. The strain states of Ge clusters and Si islands were measured by grazing-incidence diffraction using a laboratory-based X-ray diffraction technique. A tensile strain of up to 0.5% was detected in the Si islands after direct Ge deposition. Using a thin (∼10 nm) SiGe buffer layer between Si and Ge the tensile strain increases to 1.8%. Transmission electron microscopy studies confirm the absence of a regular grid of misfit dislocations in such structures. This clear experimental evidence for the compliance of Si nano-islands on SOI substrates opens a new integration concept that is not only limited to Ge but also extendable to semiconductors like III–V and II–VI materials.

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Reduction of Structural Defects in Ge Epitaxially Grown on Nano-Structured Si Islands on SOI Substrate

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.205-206.400 ◽

2013 ◽

Vol 205-206 ◽

pp. 400-405

Author(s):

Peter Zaumseil ◽

Yuji Yamamoto ◽

Markus Andreas Schubert ◽

Thomas Schroeder ◽

Bernd Tillack

Keyword(s):

Electron Microscopy ◽

Vapor Deposition ◽

Strain State ◽

Chemical Vapor ◽

Structural Defects ◽

Misfit Dislocations ◽

X Ray Diffraction ◽

X Ray ◽

Transmission Electron ◽

Nanostructured Si

One way to further increase performance and/or functionality of Si micro-and nanoelectronics is the integration of alternative semiconductors on silicon (Si). We studied the Ge/Si heterosystem with the aim to realize a Ge deposition free of misfit dislocations and with low content of other structural defects. Ge nanostructures were selectively grown by chemical vapor deposition on periodic Si nanoislands (dots and lines) on SOI substrate either directly or with a thin (about 10 nm) SiGe buffer layer. The strain state of the structures was measured by different laboratory-based x-ray diffraction techniques. It was found that a suited SiGe buffer improves the compliance of the Si compared to direct Ge deposition; plastic relaxation during growth can be prevented, and fully elastic relaxation of the structure can be achieved. Transmission electron microscopy confirms that the epitaxial growth of Ge on nanostructured Si is free of misfit dislocations.

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Surface Stoichiometry and Depth Profile of Tix-CuyNz Thin Films Deposited by Magnetron Sputtering

Materials ◽

10.3390/ma14123191 ◽

2021 ◽

Vol 14 (12) ◽

pp. 3191

Author(s):

Arun Kumar Mukhopadhyay ◽

Avishek Roy ◽

Gourab Bhattacharjee ◽

Sadhan Chandra Das ◽

Abhijit Majumdar ◽

...

Keyword(s):

Magnetron Sputtering ◽

Photoelectron Spectroscopy ◽

Film Surface ◽

Grazing Incidence ◽

X Ray Diffraction ◽

X Ray ◽

Relative Composition ◽

Transmission Electron ◽

Deposited Film ◽

Deposited Films

We report the surface stoichiometry of Tix-CuyNz thin film as a function of film depth. Films are deposited by high power impulse (HiPIMS) and DC magnetron sputtering (DCMS). The composition of Ti, Cu, and N in the deposited film is investigated by X-ray photoelectron spectroscopy (XPS). At a larger depth, the relative composition of Cu and Ti in the film is increased compared to the surface. The amount of adventitious carbon which is present on the film surface strongly decreases with film depth. Deposited films also contain a significant amount of oxygen whose origin is not fully clear. Grazing incidence X-ray diffraction (GIXD) shows a Cu3N phase on the surface, while transmission electron microscopy (TEM) indicates a polycrystalline structure and the presence of a Ti3CuN phase.

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An X-ray scattering study on inverted Ge–Si huts grown at low temperatures

Powder Diffraction ◽

10.1154/1.1815339 ◽

2004 ◽

Vol 19 (4) ◽

pp. 347-351

Author(s):

J. Xu ◽

X. S. Wu ◽

B. Qian ◽

J. F. Feng ◽

S. S. Jiang ◽

...

Keyword(s):

Low Temperatures ◽

Lattice Strain ◽

Lattice Mismatch ◽

Grazing Incidence ◽

X Ray Diffraction ◽

X Ray ◽

X Ray Scattering ◽

Transmission Electron ◽

Large Lattice ◽

Scattering Study

Ge–Si inverted huts, which formed at the Si∕Ge interface of Si∕Ge superlattice grown at low temperatures, have been measured by X-ray diffraction, grazing incidence X-ray specular and off-specular reflectivities, and transmission electron microscopy (TEM). The surface of the Si∕Ge superlattice is smooth, and there are no Ge–Si huts appearing on the surface. The roughness of the surfaces is less than 3 Å. Large lattice strain induced by lattice mismatch between Si and Ge is found to be relaxed because of the intermixing of Ge and Si at the Si∕Ge interface.

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Synthesis and Photoluminescence Properties of Novel SnO2 Zigzag Nanoribbons

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.97-101.4213 ◽

2010 ◽

Vol 97-101 ◽

pp. 4213-4216

Author(s):

Jian Xiong Liu ◽

Zheng Yu Wu ◽

Guo Wen Meng ◽

Zhao Lin Zhan

Keyword(s):

Electron Microscopy ◽

Room Temperature ◽

Vapour Deposition ◽

Chemical Vapour ◽

Photoluminescence Properties ◽

X Ray Diffraction ◽

X Ray ◽

Selected Area Electron Diffraction ◽

Transmission Electron ◽

Ceramic Boat

Novel single-crystalline SnO2 zigzag nanoribbons have been successfully synthesized by chemical vapour deposition. Sn powder in a ceramic boat covered with Si plates was heated at 1100°C in a flowing argon atmosphere to get deposits on a Si wafers. The main part of deposits is SnO2 zigzag nanoribbons. They were characterized by means of X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM) and selected-area electron diffraction (SAED). SEM observations reveal that the SnO2 zigzag nanoribbons are almost uniform, with lengths near to several hundred micrometers and have a good periodically tuned microstructure as the same zigzag angle and growth directions. Possible growth mechanism of these zigzag nanoribbons was discussed. A room temperature PL spectrum of the zigzag nanoribbons shows three peaks at 373nm, 421nm and 477nm.The novel zigzag microstructures will provide a new candidate for potential application.

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Characterisation of Chemical Vapour Deposited AlHfN Coatings

Defect and Diffusion Forum ◽

10.4028/www.scientific.net/ddf.405.33 ◽

2020 ◽

Vol 405 ◽

pp. 33-39

Author(s):

Elisabeth Rauchenwald ◽

Mario Lessiak ◽

Ronald Weissenbacher ◽

Sabine Schwarz ◽

Roland Haubner

Keyword(s):

Electron Microscopy ◽

Protective Coatings ◽

Cutting Tools ◽

Chemical Vapour ◽

Gas Composition ◽

X Ray Diffraction ◽

Multilayer Systems ◽

X Ray ◽

Transmission Electron ◽

Hcl Gas

Chemical vapour deposited HfN can be utilised as a component of multilayer systems in protective coatings on cutting tools. In this study, related AlHfN coatings were synthesized through a reaction of metallic hafnium and aluminium with HCl gas forming gaseous HfCl4 and AlCl3, which were subsequently transported into a heated coating reactor. Via high temperatures and separately introduced NH3 and N2 as reaction gases, AlHfN coatings were deposited on hardmetal inserts. By varying the ratio between AlCl3 and HfCl4, compositionally different AlHfN coatings were examined. Additionally, surface morphology, composition as well as crystalline phases of the obtained coatings were analysed by scanning electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffraction. Finally, the microstructure of the cross section of a coating was investigated via transmission electron microscopy. The observations revealed a great impact of the gas composition on the morphology and crystal structures of the coatings. Within the layer, the growth of columnar microstructures was detected. Additionally, the formation of an amorphous HfN intermediate layer between the substrate and the AlHfN with a thickness of approximately 2 nm was found.

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Structural properties of molecular beam epitaxy grown Ni/Pt superlattices

Journal of Materials Research ◽

10.1557/jmr.1997.0023 ◽

1997 ◽

Vol 12 (1) ◽

pp. 161-174 ◽

Cited By ~ 13

Author(s):

W. Staiger ◽

A. Michel ◽

V. Pierron-Bohnes ◽

N. Hermann ◽

M. C. Cadeville

Keyword(s):

Molecular Beam ◽

Growth Direction ◽

Misfit Dislocations ◽

X Ray Diffraction ◽

Plan View ◽

X Ray ◽

Transmission Electron ◽

Superlattice Peak ◽

Diffraction Peaks ◽

Diffraction Patterns

We find that the [Ni3.2nmPt1.6nm] × 15 and [Ni3.2nmPt0.8nm] × 15 multilayers are semicoherent and display a columnar morphology. From both the period of the moir’e fringes and the positions of the diffraction peaks in electronic (plan-view and crosssection geometries) and x-ray diffraction patterns, one deduces that the nickel is relaxed (at least in the error bars of all our measurements), whereas the platinum remains slightly strained (≈−1%). The interfaces are sharp; no intermixing takes place giving rise to neat contrasts in transmission electron microscopy (TEM) and to high intensities of the superlattice peaks in the growth direction in both diffraction techniques. The relaxation of the interfacial misfit occurs partially through misfit dislocations, partially through the strain of platinum. A quasiperiodic twinning occurs at the interfaces, the stacking fault which forms the twin being the most often located at the interface Pt/Ni, i.e., when a Pt layer begins to grow on the Ni layer. The simulation of the θ/2θ superlattice peak intensities takes into account the columnar microstructure. It shows that the roughness is predominantly at medium scale with a fluctuation of about 12.5% for Ni layers and negligible for Pt layers.

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Supramolecular organization of a H-bonded perylene bisimide organogelator determined by transmission electron microscopy, grazing incidence X-ray diffraction and polarized infra-red spectroscopy

Physical Chemistry Chemical Physics ◽

10.1039/c7cp06761e ◽

2017 ◽

Vol 19 (48) ◽

pp. 32514-32525 ◽

Cited By ~ 2

Author(s):

Alexandru Sarbu ◽

Patrick Hermet ◽

David Maurin ◽

David Djurado ◽

Laure Biniek ◽

...

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Grazing Incidence ◽

Supramolecular Organization ◽

X Ray Diffraction ◽

X Ray ◽

Perylene Bisimide ◽

Transmission Electron ◽

Infra Red ◽

Polarized Ftir

Polarized FTIR and TEM helps determine the supramolecular organization of PBI gelators.

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Microstructure of Epitaxial Al(111)/Si(111) Films Studied by Synchrotron Grazing Incidence X-Ray Diffraction

MRS Proceedings ◽

10.1557/proc-202-301 ◽

1990 ◽

Vol 202 ◽

Cited By ~ 1

Author(s):

H. H. Hung ◽

K. S. Liang ◽

C. H. Lee ◽

T.-M. Lu

Keyword(s):

Annealed Film ◽

Grazing Incidence ◽

Misfit Strain ◽

Interfacial Structure ◽

Misfit Dislocations ◽

X Ray Diffraction ◽

X Ray ◽

Incommensurate Structure ◽

Before And After ◽

Beam Deposition

ABSTRACTWe report the results of our x-ray diffraction studies on epitaxial Al(111)/Si(111) films prepared by the partially ionized beam deposition technique. Significant changes were observed in intensity profiles for samples before and after annealing. In the in-plane radial scan of Al(220) peak, the shift of Bragg peak is shown due to misfit strain. A weak satellite is also observed which indicates a semicoherent interfacial structure of the annealed film with misfit dislocations. A possible picture of misfit-induced incommensurate structure of Al films is discussed.

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Interface Structure of Epitaxial Nb Films on Sapphire: Grazing Incidence X-Ray Diffraction and X-Ray Reflectivity Studies

MRS Proceedings ◽

10.1557/proc-209-679 ◽

1990 ◽

Vol 209 ◽

Cited By ~ 7

Author(s):

C. H. Lee ◽

K. S. Liang ◽

F. S. Shieu ◽

S.L. Sass ◽

C. P. Flynn

Keyword(s):

Grazing Incidence ◽

Interface Structure ◽

Misfit Dislocations ◽

X Ray Diffraction ◽

X Ray ◽

Sapphire Substrates ◽

Buried Interfaces ◽

Diffraction Effects

ABSTRACTThe interface structure of MBE grown Nb films on sapphire substrates was studied using grazing incidence x-ray diffraction and x-ray reflectivity measurements. Specifically, the use of these x-ray techniques in probing the buried interfaces was demonstrated. Diffraction effects were observed which are consistent with the presence of misfit dislocations in the interface.

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Defect Pair Formation by Implantation-Induced Stresses in High-Dose Oxygen Implanted Silicon-on-Insulator Material

MRS Proceedings ◽

10.1557/proc-316-753 ◽

1993 ◽

Vol 316 ◽

Cited By ~ 2

Author(s):

J.D. Lee ◽

J.C. Park ◽

D. Venables ◽

S.J. Krause ◽

P. Roitman

Keyword(s):

Defect Density ◽

Silicon On Insulator ◽

Surface Strain ◽

High Dose ◽

X Ray Diffraction ◽

Near Surface ◽

X Ray ◽

Density Reduction ◽

Transmission Electron ◽

Pair Density

ABSTRACTDefect microstructure and the near-surface strain of high-dose oxygen implanted silicon-on-insulator material (SIMOX) were investigated as a function of dose, implant temperature, and annealing temperature by transmission electron microscopy and high resolution x-ray diffraction. Dislocation half loops (DHLs) begin to form by stress assisted climb at a critical stress level due to implantation-induced damage. DHLs evolve into through-thickness defect (TTD) pairs by expansion during annealing. Both DHL and TTD-pair density increase with higher implant dose and lower implant temperature. Possible methods for defect density reduction are suggested based on the results of this study.

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