Multiple Layer Sputter Deposition and Laser Annealing of Silicon Films

1983 ◽  
Vol 23 ◽  
Author(s):  
W. W. Anderson ◽  
H. F. Mac Millan ◽  
J. S. Katzeff ◽  
M. Lopez
Keyword(s):  
Ion Implantation ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Sputter Deposition ◽  
Silicon Substrates ◽  
Chemical Cleaning ◽  
Pulsed Laser Annealing ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Amorphous Si

ABSTRACTThe formation of single crystal multiple layers on silicon substrates with thicknesses in excess of 1 μm has been demonstrated to be a viable process. Film build-up is via repetitions of the steps (1) pre-deposition chemical cleaning of wafer, (2) magnetron sputter deposition of 0.3 pm thick amorphous Si, (3) interfacial mixing via 190 keV implantation of Si, and (4) film epitaxial crystallization via pulsed laser annealing. Doping has been demonstrated by both (1) P ion implantation and (2) P incorporation from PH3; included in the sputter gas ambient.

Pulsed Laser Annealing of R.F.Sputtered Amorphous Si : H.Films, Doped with Arsenic

1981 ◽  
Vol 4 ◽  
Author(s):  
E. Fogarassy ◽  
R. Stuck ◽  
M. Toulemonde ◽  
P. Siffert ◽  
J.F. Morhange ◽  
...  
Keyword(s):  
Ruby Laser ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Amorphous Layer ◽  
High Concentration ◽  
Topographic Analysis ◽  
Pulsed Laser Annealing ◽  
Residual Hydrogen ◽  
Silicon Target ◽  
Amorphous Si

Arsenic doped amorphous silicon layers have been deposited on silicon single crystals by R.F.cathodic sputtering of a silicon target in a reactive argon-hydrogen mixture, and annealed with a Q-switched Ruby laser. Topographic analysis of the irradiated layers has shown the formation of a crater, due to an evaporation effect of material which could be related to the presence of a high concentration of Ar in the amorphous layer. RBS and Raman Spectroscopy showed that the remaining layer is not recrystallised probably due to inhibition by the residual hydrogen. However, it was found that arsenic diffuses into the monocrystalline substrate by laser induced diffusion of dopant from the surface solid source, leading to the formation of good quality P-N junctions.

Formation of Sic, Si3N4 and SiO2 by High-Dose Ion Implantation and Laser Annealing

1980 ◽  
Vol 1 ◽  
Author(s):  
S.W. Chiang ◽  
Y.S. Liu ◽  
R.F. Reihl
Keyword(s):  
Ion Implantation ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Transmission Electron ◽  
A Cell ◽  
Ft Ir ◽  
Ft Ir Spectroscopy

ABSTRACTHigh-dose ion implantation (1017 ions-cm−2) of C+, N+, and O+ at 50 KeV into silicon followed by pulsed laser annealing at 1.06 μm was studied. Formation of SiC, Si3N4, and SiO2 has been observed and investigated using Transmission Electron Microscopy (TEM) and Differential Fourier-Transform Infrared (FT-IR) Spectroscopy. Furthermore, in N+-implanted and laser-annealed silicon samples, we have observed a cell-like structure which has been identified to be spheroidal polycrystalline silicon formed by the rapid laser irradiation.

scholarly journals Ferromagnetic InMnAs on InAs Prepared by Ion Implantation and Pulsed Laser Annealing

2012 ◽  
Vol 5 (9) ◽  
pp. 093007 ◽  
Author(s):  
Shengqiang Zhou ◽  
Yutian Wang ◽  
Zenan Jiang ◽  
Eugen Weschke ◽  
Manfred Helm
Keyword(s):  
Ion Implantation ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

Structural and optical properties of Si hyperdoped with Te by ion implantation and pulsed laser annealing

Vacuum ◽  
2020 ◽  
Vol 178 ◽  
pp. 109434 ◽  
Author(s):  
Fadei F. Komarov ◽  
Nikita S. Nechaev ◽  
Gennadii D. Ivlev ◽  
Liudmila A. Vlasukova ◽  
Irina N. Parkhomenko ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Structural And Optical Properties ◽  
Pulsed Laser Annealing

Effect of High Repetition Pulsed Laser Annealing on Optical Properties of Phosphorus Ion-Implanted ZnO Nanorods

2013 ◽  
Vol 699 ◽  
pp. 383-386
Author(s):  
Tetsuya Shimogaki ◽  
Taihei Ofuji ◽  
Norihiro Tetsuyama ◽  
Kota Okazaki ◽  
Mitsuhiro Higashihata ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Repetition Rate ◽  
Laser Annealing ◽  
Zno Nanorods ◽  
Pulsed Laser ◽  
High Repetition ◽  
Pulsed Laser Annealing ◽  
Krf Excimer Laser ◽  
Ion Implanted

We report on the effect of high repetition pulsed laser annealing with a KrF excimer laser on the optical properties of phosphorus ion-implanted ZnO nanorods. The recovery levels of phosphorus ion-implanted ZnO nanorods have been measured by photoluminescence spectra and cathode luminescence (CL) images. After ion implantation on the surface of ZnO nanorods, CL was disappeared over 400 nm below the surface due to the damage caused by ion implantation. When the annealing was performed at a low repetition, CL was recovered only shallow area below the surface. The depth of the annealed area was increased with the repetition rate of the annealing laser. By optimizing the annealing conditions such as the repetition rate, the irradiation fluence and so on, we have succeeded to anneal the whole damaged area over 400 nm in depth and to observe CL. Thus, the effectiveness of high repetition pulsed laser annealing on phosphorus ion-implanted ZnO nanorods was demonstrated.

Thermal Behavior of B, P and As Atoms in Supersaturated Si Produced by Ion Implantation and Pulsed-Laser Annealing

1982 ◽  
Vol 21 (Part 2, No. 5) ◽  
pp. L245-L247 ◽  
Author(s):  
Kazuo Itoh ◽  
Yoshisato Sasaki ◽  
Tomokuni Mitsuishi ◽  
Masanobu Miyao ◽  
Masao Tamura
Keyword(s):  
Ion Implantation ◽  
Thermal Behavior ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing
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