Grazing Incidence X-Ray Reflectometry Studies of Cadmium Arachidate Langmuir-Blodgett Films

1991 ◽  
Vol 237 ◽  
Author(s):  
B. K. Tanner ◽  
D. K Bowen ◽  
M. C Petty ◽  
S. Swaminathan ◽  
F. Granfeld
Keyword(s):  
Molecular Layer ◽  
Grazing Incidence ◽  
Interface Roughness ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Langmuir Blodgett ◽  
Crystal Imperfections ◽  
Langmuir Blodgett Films ◽  
Good Agreement

ABSTRACTGrazing incidence X-ray reflectometry has been used to characterize Langmuir-Blodgett films of cadmium arachidate deposited on silicon substrates. The agreement between layer parameters deduced from the interference fringe period and low angle Bragg peak positions was excellent. Good agreement was found between experimental and simulated reflectivity profiles only when interface roughness and a varying molecular layer thickness was included. Inclusion of interface roughness alone results in a substantial enhancement in the intensity of the Bragg peaks. This effect is identified as being equivalent to the reduction in extinction found in classical X-ray diffraction due to crystal imperfections.

A Grazing Incidence X-ray Diffraction Study of Langmuir−Blodgett Films of Poly(vinylpyridine) Quaternized withn-Docosyl Bromide

Langmuir ◽  
1998 ◽  
Vol 14 (20) ◽  
pp. 5896-5899 ◽  
Author(s):  
Deborah B. Hammond ◽  
Trevor Rayment ◽  
Damien Dunne ◽  
Philip Hodge ◽  
Ziad Ali-Adib ◽  
...  
Keyword(s):  
Diffraction Study ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Langmuir Blodgett ◽  
Langmuir Blodgett Films

Structural Characterization of Metal Phosphonate Langmuir−Blodgett Films by Grazing Incidence X-ray Diffraction

Langmuir ◽  
2002 ◽  
Vol 18 (21) ◽  
pp. 8260-8262 ◽  
Author(s):  
Jeffrey T. Culp ◽  
Mark Davidson ◽  
Randolph S. Duran ◽  
Daniel R. Talham
Keyword(s):  
Structural Characterization ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Langmuir Blodgett ◽  
Metal Phosphonate ◽  
Langmuir Blodgett Films

Grazing incidence in-plane X-ray diffraction in the laboratory

2004 ◽  
Vol 19 (1) ◽  
pp. 45-48 ◽  
Author(s):  
B. K. Tanner ◽  
T. P. A. Hase ◽  
T. A. Lafford ◽  
M. S. Goorsky
Keyword(s):  
High Resolution ◽  
Grazing Incidence ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Zno Film ◽  
X Ray ◽  
Langmuir Blodgett ◽  
Intensity Measurements ◽  
Langmuir Blodgett Films ◽  
Thin Polycrystalline

The laboratory implementation of grazing incidence in-plane X-ray diffraction, using an unmodified commercial diffractometer, is described. Low resolution, high intensity measurements are illustrated in the study of the in-plane lattice parameters and texture of a thin polycrystalline ZnO film on glass, the in-plane order in Cd arachidate Langmuir–Blodgett films, and the depth dependence of the lattice parameter in graded Si–Ge epilayers. Use of an asymmetrically cut Ge crystal to compress and monochromate the beam provides a high resolution setting, appropriate to measurement of the in-plane mosaic of mismatched epilayers such as GaN on sapphire.

Unusual X-Ray Diffraction Vector Shift Observed in Heterogeneous Langmuir-Blodgett Multilayer Films

1992 ◽  
Vol 247 ◽  
Author(s):  
Yoshio Nogami ◽  
Kazuyoshi Ogasawara ◽  
Shigeki Takeuchi ◽  
Takehiko Ishiguro ◽  
Kazumasa Ohsumi ◽  
...  
Keyword(s):  
Diffraction Method ◽  
X Ray Diffraction ◽  
Diffraction Vector ◽  
X Ray ◽  
Langmuir Blodgett ◽  
Alkyl Chains ◽  
Oscillatory Structure ◽  
Langmuir Blodgett Films ◽  
Diffraction Patterns ◽  
Vector Shift

ABSTRACTStacking of heterogeneous Langmuir-Blodgett films was studied by high resolution X-ray diffraction method using synchrotron radiation (SR) source. The diffraction patterns of the heterogeneous films formed with alternately deposited Cd salts of fatty acids with different length of alkyl chains exhibit anomalous oscillatory structure in diffraction vector.

Thermal Degradation of SiGe Interfaces Studied by X-Ray Reflectivity and Diffraction

1991 ◽  
Vol 239 ◽  
Author(s):  
J. M. Hudson ◽  
A. R. Powell ◽  
D. K. Bowen ◽  
M. Wormington ◽  
B. K. Tanner ◽  
...  
Keyword(s):  
Short Range ◽  
Grazing Incidence ◽  
Sige Layer ◽  
Interface Roughness ◽  
Total Thickness ◽  
X Ray Diffraction ◽  
X Ray ◽  
Surface And Interface ◽  
Superlattice Structures

ABSTRACTWe demonstrate the use of x-ray diffraction to provide accurate compositional information, together with grazing incidence reflectivity to provide information on layer thicknesses and surface and interface roughnesses, on Si/Si1-xGex superlattice structures of less than 200nm total thickness.The quality of SiGe interfaces has been investigated in superlattices where x varies from 0.1 to 0.5. At low Ge compositions the interfaces are shown to be smooth to a few angstroms. However, as the Ge composition in the SiGe layer approaches 50%, severe roughness is observed at the SiGe to Si interfaces, although the Si to SiGe interfaces remain relatively smooth.Upon annealing for one hour at 850°C the Ge diffuses outwards from the SiGe layers and can be closely modelled by inclusion of a (2.4±0.3)nm linearly graded layer either side of the SiGe layer into a simulation program. The long range roughness at the SiGe to Si interface is lost upon annealing leaving only a short range roughness of similar size to the Si to SiGe interface roughness.Reflectivity measurements have been shown to distinguish between interface roughness and interdiffusion for the annealed system.

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