Impurity Profiles in InP from Ion Implantation at Elevated Temperatures

1991 ◽  
Vol 240 ◽  
Author(s):  
P. Kringhoj ◽  
B. G. Svensson
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Elevated Temperatures ◽  
Secondary Ion Mass Spectrometry ◽  
Implantation Damage ◽  
Ion Mass Spectrometry ◽  
Chemical Profiles ◽  
Impurity Profiles ◽  
Secondary Ion

ABSTRACTThe chemical profiles of Zn, Ge, and Se implanted into InP at elevated temperatures have been measured with secondary ion mass spectrometry and correlated to the implantation damage as deduced from RBS/channeling measurements. An asymmetric broadening of the chemical profiles towards the bulk was found for implantation temperatures above 150°C. This effect is concluded to be due to impurity channeling during implantation.

scholarly journals Measurements of the Diffusion of Iron and Carbon in Single Crystal NiAl using Ion Implantation and Secondary Ion Mass Spectrometry

1998 ◽  
Vol 527 ◽  
Author(s):  
R. J. Hanrahan ◽  
S. P. Withrow ◽  
M. Puga-Lambers
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Single Crystal ◽  
Secondary Ion Mass Spectrometry ◽  
Tracer Diffusion ◽  
Dynamic Strain ◽  
Enhanced Diffusion ◽  
Ion Mass Spectrometry ◽  
Impurity Elements ◽  
Secondary Ion

ABSTRACTClassical diffusion measurements in intermetallic compounds are often complicated by low diffusivities or low solubilities of the elements of interest. Using secondary ion mass spectrometry for measurements over a relatively shallow spatial range may be used to solve the problem of low diffusivity. In order to simultaneously obtain measurements on important impurity elements with low solubilities we have used ion implantation to supersaturate a narrow layer near the surface. Single crystal NiAl was implanted with either 12C or both 56Fe and 12C in order to investigate the measurement of substitutional (Fe) versus interstitial (C) tracer diffusion and the cross effect of both substitutional and interstitial diffusion. When C alone was implanted negligible diffusion was observed over the range of times and temperatures investigated. When both Fe and C were implanted together significantly enhanced diffusion of the C was observed, which is apparently associated with the movement of Fe. This supports one theory of dynamic strain aging in Fe alloyed NiAl.

Quantitation of Secondary Ion Mass Spectrometry (SIMS) for HgCdTe.

1983 ◽  
Vol 25 ◽  
Author(s):  
Lawrence E. Lapides ◽  
George L. Whiteman ◽  
Robert G. Wilson
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Ionization Potential ◽  
Electron Affinity ◽  
Secondary Ion Mass Spectrometry ◽  
Relative Sensitivity ◽  
Depth Profiles ◽  
Ion Mass Spectrometry ◽  
Sensitivity Factors ◽  
Secondary Ion

ABSTRACTQuantitative depth profiles of impurities in LPE layers of HgCdTe have been determined using relative sensitivity factors calculated from ion implantation profiles. Standards were provided for Li, Be, B, C, F, Na, Mg, Al, Si, P, S, Cl, Cu, Ga, As, Br, and In. Relative sensitivity factors as a function of ionization potential for O2+ primary ion SIMS and electron affinity for Cs+ primary ion SIMS have been calculated in order to extend quantitation to elements not yet implanted. Examples of depth profiles for implant standards and unimplanted layers are given.

Investigation of the Dopant Distribution in thin Epitaxial Silicon Layers by Means of Spreading Resistance Probe and Secondary Ion Mass Spectrometry

1997 ◽  
Vol 500 ◽  
Author(s):  
Ilya Karpov ◽  
Catherine Hartford ◽  
Greg Moran ◽  
Subramania Krishnakumar ◽  
Ron Choma ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Doping Profile ◽  
Epitaxial Silicon ◽  
Spreading Resistance ◽  
Boron Doped ◽  
Ion Mass Spectrometry ◽  
Chemical Profiles ◽  
Secondary Ion

ABSTRACTIn this paper, we examine the dopant distributions in 1.8 to 4 micron-thick boron- and phosphorus-doped epitaxial silicon layers. These layers were grown by chemical vapor deposition (CVD) on arsenic-, antimony-, or boron-doped (100)- and (111)-oriented substrates. We performed doping profile studies by means of local resistivity measurements using a spreading resistance probe (SRP). Chemical profiles of the dopants were also obtained using secondary ion mass spectrometry (SIMS).

DEPTH-DEPENDENT MIXING OF AN AlAs-GaAs SUPERLATTICE BY ION IMPLANTATION

1985 ◽  
Vol 56 ◽  
Author(s):  
S.A. SCHWARZ ◽  
T. VENKATESAN ◽  
R. BHAT ◽  
M. KOZA ◽  
H.W. YOON ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Diffusion Coefficient ◽  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Mixing Effect ◽  
Thermal Mixing ◽  
Projected Range ◽  
Ion Mass Spectrometry ◽  
Before And After ◽  
Secondary Ion

AbstractThe effects of implantation and annealing on an AlAs-GaAs superlattice grown by OMCVD is examined with SIMS (secondary ion mass spectrometry). Several 180 keV 28Si+ implants, with doses ranging from 3 × 1013 to 3 × 1015 cm−2, are examined before and after a three hour 850 C anneal. While the implantation by itself causes some intermixing in the vicinity of the projected range, the 850 C thermal anneal induces significant mixing at depths well beyond the implant range. In the region of maximum implant damage, however, the post-thermal mixing effect is inhibited. Depth dependent diffusion lengths of Al and Si are derived from the SIMS data. The diffusion coefficient of Si is markedly enhanced in the mixed regions.

Ion Implantation In Linbo3;

1983 ◽  
Vol 24 ◽  
Author(s):  
R. G. Wilson ◽  
D. M. Jamba ◽  
D. A. Betts
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Mass Spectrometry ◽  
Secondary Ion ◽  
Depth Distributions

ABSTRACTIon implantation is used to fabricate waveguides in LiNbO3;. We have implanted a variety of ions into LiNbO3; at energies from 100 to 300 keV and have been able to profile their depth distributions by secondary ion mass spectrometry. We report here their depth distributions and range parameters determined from Pearson IV fitting.

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