Oxygen in Gallium Arsenide

1991 ◽  
Vol 240 ◽  
Author(s):  
Hans Ch. Alt
Keyword(s):  
Gallium Arsenide ◽  
Optical Properties ◽  
High Resistivity ◽  
Surface Layers ◽  
Electrical And Optical Properties ◽  
Active Defect ◽  
Oxygen Implantation ◽  
Compensation Behavior ◽  
High Concentrations

ABSTRACTThe influence of oxygen-related defects on the compensation behavior of semi-insulating gallium arsenide has been studied. Off-center substitutional oxygen (Ga-O-Ga center) forms an electrically active defect with two levels in the fundamental gap. The negative-U ordering of these levels is the origin for very unusual electrical and optical properties. By oxygen implantation and annealing high concentrations of this center are created which are technologically useful to obtain high-resistivity surface layers.

scholarly journals Electrical and Optical Properties of Indium and Lead Co-Doped Cd0.9Zn0.1Te

Materials ◽  
2021 ◽  
Vol 14 (19) ◽  
pp. 5825
Author(s):  
Yasir Zaman ◽  
Vineet Tirth ◽  
Nasir Rahman ◽  
Amjad Ali ◽  
Rajwali Khan ◽  
...  
Keyword(s):  
Optical Properties ◽  
Deep Level ◽  
Radiation Detection ◽  
Growth Direction ◽  
Middle Part ◽  
Hall Measurement ◽  
High Resistivity ◽  
Electrical And Optical Properties ◽  
Neutral Donor ◽  
Ir Microscopy

We have investigated the electrical and optical properties of Cd0.9Zn0.1Te:(In,Pb) wafers obtained from the tip, middle, and tail of the same ingot grown by modified vertical Bridgman method using I-V measurement, Hall measurement, IR Transmittance, IR Microscopy and Photoluminescence (PL) spectroscopy. I-V results show that the resistivity of the tip, middle, and tail wafers are 1.8 × 1010, 1.21 × 109, and 1.2 × 1010 Ω·cm, respectively, reflecting native deep level defects dominating in tip and tail wafers for high resistivity compared to the middle part. Hall measurement shows the conductivity type changes from n at the tip to p at the tail in the growth direction. IR Transmittance for tail, middle, and tip is about 58.3%, 55.5%, and 54.1%, respectively. IR microscopy shows the density of Te/inclusions at tip, middle, and tail are 1 × 103, 6 × 102 and 15 × 103/cm2 respectively. Photoluminescence (PL) spectra reflect that neutral acceptor exciton (A0,X) and neutral donor exciton (D0,X) of tip and tail wafers have high intensity corresponding to their high resistivity compared to the middle wafer, which has resistivity a little lower. These types of materials have a large number of applications in radiation detection.

Material-Process Interactions in the Annealing of Gallium Arsenide

1981 ◽  
Vol 4 ◽  
Author(s):  
C. Lawrence Anderson
Keyword(s):  
Gallium Arsenide ◽  
Optical Properties ◽  
Electrical Properties ◽  
Electron Beams ◽  
Pulsed Laser ◽  
Review Article ◽  
Electrical And Optical Properties ◽  
Physical Mechanisms ◽  
Material Process ◽  
Thermal Techniques

ABSTRACTThis review article provides an overview of the current understanding of the physical mechanisms involved in the annealing of ion implanted GaAs by thermal techniques and by CW and pulsed laser and electron beams. The successfulness of these techniques is evaluated in terms of the electrical and optical properties of the annealed layers. Promising areas of investigation for the improvement of the electrical properties of n-type layers produced by pulsed annealing are identified.

scholarly journals Influence of laser radiation on optical properties of high resistivity crystals CdTe and solid solutions Cd1-xZnxTe

2020 ◽  
Vol 21 (1) ◽  
pp. 68-72
Author(s):  
P. O. Gentsar ◽  
S. M. Levytskyi
Keyword(s):  
Optical Properties ◽  
Energy Range ◽  
Laser Irradiation ◽  
Solid Solutions ◽  
High Resistivity ◽  
Surface Layers ◽  
Defective Structure ◽  
Before And After ◽  
532 Nm ◽  
Transmission And Reflection

In this paper, the transmission and reflection spectra of single crystals р-CdTe(111) are measured; solid solutions of Cd1-хZnхTe (х=0.1) in the range (0.2 – 1.7)·10-6 m before and after laser irradiation at the wavelength λ = 532 nm in the energy range 66 - 164 mJ/cm2 for CdTe(111) and in the energy range 46.6 mJ/cm2 - 163.5 mJ/cm2 for Cd1-хZnxTe (x = 0.1). It is established that the main mechanism of influence of pulsed laser irradiation on the optical properties of thin surface layers of the investigated crystals is structural gettering, that is, the absorption due to the presence of sections of semiconductors that have a defective structure and have the ability to actively absorb defects and points.

ELECTRICAL AND OPTICAL PROPERTIES OF UHV SUBLIMED a-As

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-869-C4-872
Author(s):  
R. T. Phillips ◽  
A. J. Mackintosh ◽  
A. D. Yoffe
Keyword(s):  
Optical Properties ◽  
Electrical And Optical Properties
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