Electrical and Optical Properties of Indium and Lead Co-Doped Cd0.9Zn0.1Te

We have investigated the electrical and optical properties of Cd0.9Zn0.1Te:(In,Pb) wafers obtained from the tip, middle, and tail of the same ingot grown by modified vertical Bridgman method using I-V measurement, Hall measurement, IR Transmittance, IR Microscopy and Photoluminescence (PL) spectroscopy. I-V results show that the resistivity of the tip, middle, and tail wafers are 1.8 × 1010, 1.21 × 109, and 1.2 × 1010 Ω·cm, respectively, reflecting native deep level defects dominating in tip and tail wafers for high resistivity compared to the middle part. Hall measurement shows the conductivity type changes from n at the tip to p at the tail in the growth direction. IR Transmittance for tail, middle, and tip is about 58.3%, 55.5%, and 54.1%, respectively. IR microscopy shows the density of Te/inclusions at tip, middle, and tail are 1 × 103, 6 × 102 and 15 × 103/cm2 respectively. Photoluminescence (PL) spectra reflect that neutral acceptor exciton (A0,X) and neutral donor exciton (D0,X) of tip and tail wafers have high intensity corresponding to their high resistivity compared to the middle wafer, which has resistivity a little lower. These types of materials have a large number of applications in radiation detection.

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Deep Level Centers in Carbon-Doped High Resistivity GaN

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.997.492 ◽

2014 ◽

Vol 997 ◽

pp. 492-495

Author(s):

Huan Cui ◽

Li Wu Lu ◽

Ling Sang ◽

Bai He Chen ◽

Zhi Wei He ◽

...

Keyword(s):

Deep Level ◽

Chemical Vapor ◽

Deep Levels ◽

Hall Measurement ◽

High Resistivity ◽

Organic Chemical ◽

Carbon Doped ◽

Metal Organic ◽

High Level ◽

Organic Chemical Vapor Deposition

The deep levels of carbon doped high resistivity (HR) GaN samples grown by metal-organic chemical vapor deposition (MOCVD) has been investigated using thermally stimulated current (TSC) spectroscopy and high temperature (HT) Hall measurement. Two different thickness of 100 and 300 nm were used to be compared. It was found that four distinct deep levels by TSC and one deep level by HT Hall measurement were observed in both samples, which means great help for the decrease of leakage current and lifetime limitations of device utilizing the structure. The activation energy of these levels was calculated and their possible origins were also proposed. The low temperature traps, might be related to VN, 0.50 and 0.52eV related to incorporate a high level carbon, 0.57eV related to VGa, 0.59eV related to CGaor NGa, 0.91 and 0.97eV related to interstitial N1.

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Electrical and Optical Properties of High-Resistivity Gallium Phosphide

Physical Review ◽

10.1103/physrev.148.715 ◽

1966 ◽

Vol 148 (2) ◽

pp. 715-721 ◽

Cited By ~ 26

Author(s):

Bernard Goldstein ◽

S. S. Perlman

Keyword(s):

Optical Properties ◽

Gallium Phosphide ◽

High Resistivity ◽

Electrical And Optical Properties

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High resistivity In-doped ZnTe: electrical and optical properties

Bulletin of Materials Science ◽

10.1007/bf02708533 ◽

2005 ◽

Vol 28 (7) ◽

pp. 647-650 ◽

Cited By ~ 6

Author(s):

D. N. Bose ◽

S. Bhunia

Keyword(s):

Optical Properties ◽

High Resistivity ◽

Electrical And Optical Properties

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Oxygen in Gallium Arsenide

MRS Proceedings ◽

10.1557/proc-240-871 ◽

1991 ◽

Vol 240 ◽

Author(s):

Hans Ch. Alt

Keyword(s):

Gallium Arsenide ◽

Optical Properties ◽

High Resistivity ◽

Surface Layers ◽

Electrical And Optical Properties ◽

Active Defect ◽

Oxygen Implantation ◽

Compensation Behavior ◽

High Concentrations

ABSTRACTThe influence of oxygen-related defects on the compensation behavior of semi-insulating gallium arsenide has been studied. Off-center substitutional oxygen (Ga-O-Ga center) forms an electrically active defect with two levels in the fundamental gap. The negative-U ordering of these levels is the origin for very unusual electrical and optical properties. By oxygen implantation and annealing high concentrations of this center are created which are technologically useful to obtain high-resistivity surface layers.

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The Effect of Ionizing Radiations on the Structural, Electrical and Optical Properties of AIIBVI Polycrystalline Thin Films Used as Solar Cell Materials

MRS Proceedings ◽

10.1557/proc-1012-y12-01 ◽

2007 ◽

Vol 1012 ◽

Author(s):

Lucian Ion ◽

Vlad Andrei Antohe ◽

Marian Ghenescu ◽

Oana Ghenescu ◽

Rosemary Bazavan ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Solar Cell ◽

High Energy ◽

Growth Direction ◽

Cubic Phase ◽

Electrical And Optical Properties ◽

Polycrystalline Thin Films ◽

Cdte Thin Films ◽

Ionizing Radiations

AbstractThe effects of irradiation with high-energy protons (3 MeV, up to a fluency of 1013 protons/cm2), on structural, electrical and optical properties of polycrystalline CdS and CdTe thin films have been investigated. XRD investigation has revealed that the films contain wurtzite-type CdS, (001) preferentially oriented in the growth direction, and cubic phase CdTe, respectively. The defects induced by ionizing radiations have been studied by thermally stimulated currents spectroscopy (TSC). Parameters of identified defect levels were determined and their possible origin is discussed.

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Comparative Study of Electrical and Optical Properties of Plastically Deformed Silicon

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.156-158.425 ◽

2009 ◽

Vol 156-158 ◽

pp. 425-430

Author(s):

Nikolai Yarykin ◽

Olga V. Feklisova

Keyword(s):

Optical Properties ◽

Deep Level ◽

Optically Active ◽

Wave Number ◽

Ir Absorption ◽

Electrical And Optical Properties ◽

Silicon Crystals ◽

Induced Defects ◽

Direct Correspondence ◽

Disappearance Kinetics

The Czochralski-grown silicon crystals plastically deformed at 680±C to the residual strain of 5% and subsequently annealed in the temperature range of 650{850±C were studied by the IR absorption and DLTS techniques. The formation and disappearance kinetics were investigated for several weak IR absorption lines around the 1000 cm¡1 wave number, which were previously related to the deformation-induced defects of non-dislocation nature in the dislocation trails. In parallel, the spectrum and concentrations of the deep-level centers in the upper half of the gap were measured by DLTS. It is found that the deep-level centers and op- tically active defects exhibit a common behavior during the post-deformation heat treatments. However, a direct correspondence between the IR and DLTS features cannot be established be- cause of the higher concentration of the deep-level centers as compared to the optically active defects.

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