An Auger Electron Spectroscopy (AES) Investigation into the Effect Annealing on the Phase Distribution of Ion Implanted Oxygen in Silicon

1983 ◽  
Vol 25 ◽  
Author(s):  
C G Tuppen ◽  
G J Davies ◽  
M R Taylor ◽  
R Heckingbottom
Keyword(s):  
Electron Spectroscopy ◽  
Beam Energy ◽  
Auger Electron ◽  
Phase Distribution ◽  
Auger Spectrum ◽  
Ion Beam ◽  
Depth Profiling ◽  
High Dose ◽  
High Temperature Annealing ◽  
Small Precipitate

ABSTRACTBuried oxide layers, formed by high dose ion implantation, have been examined using Auger depth profiling. The phase distribution of oxygen in the wings of the implant profile and effects of high temperature annealing, have been investigated. Ion beam induced cascade mixing, which occurs during sputter etching, limits the minimum detectable size of SiO2 precipitates. However, it is possible to minimise this effect by reducing the ion beam energy. At very small precipitate sizes (<100Å) silicon atoms at the edge of the precipitate particles will make a major contribution to the Si KLL Auger spectrum. A previously reported theoretical model has been expanded to take account of this phenomenon.

scholarly journals Ion-Implanted Epitaxially Grown Gd2O3 on Silicon with Improved Electrical Properties

2020 ◽  
Vol 49 (11) ◽  
pp. 6270-6275
Author(s):  
A. Joseph ◽  
G. Lilienkamp ◽  
T. F. Wietler ◽  
H. J. Osten
Keyword(s):  
Oxide Layer ◽  
Leakage Current ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Oxygen Vacancies ◽  
Depth Profiling ◽  
Implantation Dose ◽  
Hydroxyl Group ◽  
High Dose ◽  
Nitrogen Incorporation

Abstract The effects of nitrogen incorporation by high-dose ion implantation in epitaxial gadolinium oxide (Gd2O3) films on Si (111) followed by annealing have been investigated. The nitrogen content in the oxide layer was changed by altering the implantation dose. The presence of nitrogen incorporation on the Gd2O3 layer was studied using Auger electron spectroscopy. Nitrogen incorporation is believed to occur by filling the oxygen vacancies or by removing hydroxyl group ions in Gd2O3. A maximum concentration of 11% was obtained for nitrogen in the interface between the silicon dioxide and Gd2O3 layer and the implanted areas of the Gd2O3 oxide layer after sputter depth profiling. The nitrogen distribution in the layer was found to be non-uniform. Nitrogen incorporation sharply reduced the leakage current and effectively suppressed the hysteresis. Leakage current was two orders lower compared with the pure Gd2O3.

Densification and Crystallization of Amorphous SiO2 by Neutral Beam Bombardment

1992 ◽  
Vol 284 ◽  
Author(s):  
Tatsumi Mizutani
Keyword(s):  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ion Beam ◽  
High Energy ◽  
Neutral Beam ◽  
High Dose ◽  
High Energy Electron ◽  
Amorphous Sio2 ◽  
Preferential Sputtering ◽  
Spot Formation

ABSTRACTAmorphous SiO2 films formed by thermal oxidation of silicon have been bombarded by low-energy (350 — 400 eV) ion beam and neutral beam of inert atoms. The modified SiO2 layers have been characterized by Auger electron spectroscopy (AES), Rutherford backscattering spectroscopy (RBS) and reflection high energy electron diffraction (RHEED). It is shown that neutral beam bombardment does not cause preferential sputtering of oxygenfrom SiO2, whereas ion beam of the same energy causes significant preferential sputtering. For neutral bombardment, densification and crystallization of SiO2 have been observed. The formation of α-cristobalite and α-quartz from amorphous SiO2 has been observed for high dose bombardments (>1017neutrals/cm2). These densification and crystallization phenomena can be attributed to high temperature and high pressure local spot formation upon the incidence of energetic neutral atoms. For ion beam bombardments, these densification and crystallization phenomena have not been observed.

Sidewall-Less Depth Profiling with Auger Electron Spectroscopy

1995 ◽  
Vol 34 (Part 1, No. 12A) ◽  
pp. 6483-6486
Author(s):  
Kazuyuki Inoue ◽  
Maki Tokoro ◽  
Noritomo Suzuki ◽  
Ryohji Matsubara ◽  
KenjiNakano
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling

Copper Diffusion Into Aluminum-Silicon Metallizations by Accelerated Thermal and Electrical Stressing

1996 ◽  
Vol 428 ◽  
Author(s):  
G. O. Ramseyer ◽  
L. H. Walsh ◽  
J. V. Beasock ◽  
H. F. Helbig ◽  
R. C. Lacoe ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling ◽  
Copper Diffusion ◽  
Force Microscopy ◽  
Atomic Force ◽  
Line Widths ◽  
Electromigration Lifetime

AbstractPatterned 930 nm Al(1%-Si) interconnects over 147 nm of Cu were electromigration lifetime tested at 1.0–1.5 × 105 A/cm2 at 250 °C. The morphology of the surfaces of the electromigrated stripes with different line widths and times to failure were characterized by atomic force microscopy, and changes in surface roughness were compared. The diffusion of copper into the electromigrated aluminum stripes was determined by depth profiling using Auger electron spectroscopy. In particular, areas where hillocks formed were examined and compared to areas of median roughness.

Search for Ion Induced Mixing in Ceramic-Ceramic Systems

1995 ◽  
Vol 396 ◽  
Author(s):  
K.R. Padmanabhan
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ion Beam ◽  
Epitaxial Films ◽  
Ion Beam Mixing ◽  
Ceramic Substrates ◽  
Ion Channeling ◽  
Ceramic Films ◽  
Dose Dependent

AbstractThin sputtered ceramic films deposited on ceramic substrates were subjected to either Kr+ or Xe+ ion bombardment for ion beam mixing studies in ceramic-ceramic systems. The amount of mixing if any was evaluated from Rutherford backscattering and Auger electron spectroscopy. In some instances ceramic films were deposited on epitaxial films or single crystal substrates for ion channeling analysis. No significant mixing was observed in any of the systems with ZrC. However, analysis of the interface in Si3N4/ SiC system indicates appreciable mixing and ion beam induced damage to the substrate. The mixing appears to be dose dependent for heavier ions.

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