Raman Scattering in Electrochemically Prepared Porous Silicon

1991 ◽  
Vol 256 ◽  
Author(s):  
Y. -J. Wu ◽  
X. -S. Zhao ◽  
P. D. Persans
Keyword(s):  
Porous Silicon ◽  
Raman Scattering ◽  
Amorphous Silicon ◽  
Room Temperature ◽  
High Efficiency ◽  
Silicon Oxide ◽  
Electrochemical Etching ◽  
Visible Range ◽  
Microcrystalline Silicon ◽  
Hydrogenated Amorphous

ABSTRACTPorous silicon of various porosity has been prepared by electrochemical etching of silicon with different doping levels. Room temperature photoluminescence in the visible range is observed from the powder scraped from the top layer of the etched samples. In this paper we use Raman scattering to characterize the source of the high efficiency photoluminescence. We have also studied microcrystalline silicon prepared by thermal annealing of hydrogenated amorphous silicon/amorphous silicon oxide multilayers.

Development of plasma-enhanced chemical vapor deposition microcrystalline silicon oxide as a replacement for N-type or back transparent conducting oxide layers in amorphous silicon single-junction solar cells

2014 ◽  
Vol 92 (7/8) ◽  
pp. 924-927 ◽  
Author(s):  
Shin-Wei Liang ◽  
Hung-Jung Hsu ◽  
Cheng-Hang Hsu ◽  
Chuang-Chuang Tsai
Keyword(s):  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
Transparent Conducting Oxide ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Microcrystalline Silicon ◽  
Single Junction ◽  
Transparent Conducting ◽  
Hydrogenated Amorphous

The n-type hydrogenated microcrystalline silicon oxide (μc-SiOx:H(n)) thin films with varied electrical and optical properties were prepared. We employed μc-SiOx:H(n) as a replacement for n-type hydrogenated amorphous silicon (a-Si:H(n)) or back transparent conducting oxide (TCO) layers in hydrogenated amorphous silicon (a-Si:H) single-junction solar cells. Compared to the standard cell with a-Si:H(n)/ITO/Ag back reflecting structure, the cell using a-Si:H(n)/μc-SiOx:H(n)/Ag or μc-SiOx:H(n)/Ag showed a similar or even better performance. This improvement of cell performance mainly arose from the increased short-circuit current density (JSC) that originated from the increased long wavelength (580–660 nm) absorption in the absorber confirmed by the quantum efficiency measurement. The “all plasma-enhanced chemical vapor deposition ” (if the front TCO and metal contact are disregarded) process without TCO (indium tin oxide, ITO) sputtering can simplify the fabrication and result in better interface quality. Compared to the standard cell, the conversion efficiency of a-Si:H cells using an 80 nm thick μc-SiOx:H(n)/Ag back reflecting structure was enhanced from 9.32% to 9.84%, with VOC = 0.90 V, JSC = 14.84 mA/cm2, and FF = 73.7%.

Observation of spontaneous Raman scattering in hydrogenated amorphous silicon wire waveguide at 1.55 µm

2013 ◽  
Vol 49 (9) ◽  
pp. 610-612
Author(s):  
K. Tanizawa ◽  
S. Suda ◽  
Y. Sakakibara ◽  
T. Kamei ◽  
R. Takei ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Spontaneous Raman Scattering ◽  
Hydrogenated Amorphous

Room-temperature electroluminescence of Er-doped hydrogenated amorphous silicon

1998 ◽  
Vol 227-230 ◽  
pp. 1164-1167 ◽  
Author(s):  
Oleg Gusev ◽  
Mikhail Bresler ◽  
Alexey Kuznetsov ◽  
Vera Kudoyarova ◽  
Petr Pak ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Er Doped ◽  
Hydrogenated Amorphous

The Spectral Dependence of the Non-Radiative Efficiency in Hydrogenated Amorphous Silicon

1992 ◽  
Vol 258 ◽  
Author(s):  
J. Fan ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Free Carrier ◽  
Radiative Efficiency ◽  
Sharp Minimum ◽  
Carrier Thermalization ◽  
Hydrogenated Amorphous ◽  
Kinetics Of ◽  
Heat Released

ABSTRACTThe room temperature non-radiative efficiency, defined as the ratio of the heat released per absorbed photon for doped and undoped hydrogenated amorphous silicon (a-Si:H) has been measured using photo-pyroelectric spectroscopy (PPES) for photon energies ranging from 2.5 to 1.6 eV. There is a fairly sharp minimum in the non-radiative efficiency when the a-Si:H is illuminated with near bandgap photons. We describe a model wherein this minimum arises from the variation in the amount of heat generated by free carrier thermalization as the incident photon energy is varied, and report measurements of the excitation kinetics of the non-radiative efficiency which support this proposal.

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