scholarly journals Origin of Surface Defects in a-Si:H Films

1992 ◽  
Vol 258 ◽  
Author(s):  
H. Yan ◽  
A. Morimoto ◽  
M. Kumeda ◽  
T. Shimizu ◽  
Y. Yonezawa

ABSTRACTSurface oxidation and surface defect creation processes in a-Si:H films have been studied in detail by means of electron spin resonance(ESR) and X-ray photoelectron spectroscopy(XPS). It is found that Si dangling bonds created by the surface oxidation distribute far wider than the thickness of the SiO2 layer. These defects are also found to be removed out by annealing at around 100°C. These defects are proposed to be created by a stress in a-Si:H induced by the surface oxidation. Moreover, the presence of the surface defects unrelated to oxidation is shown for the first time by the present experiment. The origin of these defects, however, are not clear at present.

1996 ◽  
Vol 39 (3) ◽  
pp. 173-178 ◽  
Author(s):  
Atsushi Masuda ◽  
Yasuto Yonezawa ◽  
Akiharu Morimoto ◽  
Minoru Kumeda ◽  
Tatsuo Shimizu

2003 ◽  
Vol 18 (10) ◽  
pp. 2509-2514 ◽  
Author(s):  
Masaharu Nakayama ◽  
Takahiro Ii ◽  
Kotaro Ogura

Molybdenum-containing films electrochemically deposited from an aqueous solution of 12-molybdphosphate (PMo12O40)3− (denoted as PMo12) have been characterized by x-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR), and electron spin resonance (ESR) techniques. XPS and FTIR data indicate that electrolysis of PMo12 leads to the formation of Mo–O–Mo linkage by condensation of the polyanions accompanied by decomposition of the phosphate moiety. The ESR spectrum of the deposited film exhibits an asymmetric signal with g ∼1.92, indicative of pentavalent molybdenum (d1). The feature of this signal is close to that for a MoV ion in the amorphous MoO3 phase, but not in the PMo12 framework. It is therefore suggested that the deposited film no longer has the Keggin structure PMo12, but consists of a continuous structure containing molybdenum oxide.


1984 ◽  
Vol 15 (35) ◽  
Author(s):  
J. P. ROBINSON ◽  
E. F. WAWROUSEK ◽  
J. V. MCARDLE ◽  
G. COYLE ◽  
I. ADLER

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