Improvement in Wide-Gap A-SI:H For High-Efficiency Solar Cells

1992 ◽  
Vol 258 ◽  
Author(s):  
Sadaji Tsuge ◽  
Yoshihiro Hishikawa ◽  
Shingo Okamoto ◽  
Manabu Sasaki ◽  
Shinya Tsuda ◽  
...  

ABSTRACTA hydrogen-plasma treatment has been used for the first time to fabricate wide-gap, high-quality a-Si:H films. The hydrogen content (CH) of a-Si:H films substantially increases by the hydrogen-plasma treatment after deposition, without deteriorating the opto-electric properties of the films. The photoconductivity (σph) of ≥ 10-5 ο-1 cm-1, photosensitivity ( σ ph/σ d) of > 106 and SiH2/SiH of <0.2 are achieved for a film with CH of ∼25 atomic >%. The optical gap of the film is > 1.70 eV by the (α h ν )1/3 plot, and is >2 eV by the Tauc's plot. The open circuit voltage of a-Si solar cells exceeds 1 V conserving the fill factor of > 0.7 when the wide-gap a∼Si:H films are used as the i-layer, which proves the wide band gap and low defect density.

Author(s):  
Mengmeng Chen ◽  
Muhammad Akmal Kamarudin ◽  
Ajay K. Baranwal ◽  
Gaurav Kapil ◽  
Teresa S. Ripolles ◽  
...  

Molecules ◽  
2020 ◽  
Vol 25 (18) ◽  
pp. 4101
Author(s):  
Siyang Liu ◽  
Shuwang Yi ◽  
Peiling Qing ◽  
Weijun Li ◽  
Bin Gu ◽  
...  

The novel and appropriate molecular design for polymer donors are playing an important role in realizing high-efficiency and high stable polymer solar cells (PSCs). In this work, four conjugated polymers (PIDT-O, PIDTT-O, PIDT-S and PIDTT-S) with indacenodithiophene (IDT) and indacenodithieno [3,2-b]thiophene (IDTT) as the donor units, and alkoxy-substituted benzoxadiazole and benzothiadiazole derivatives as the acceptor units have been designed and synthesized. Taking advantages of the molecular engineering on polymer backbones, these four polymers showed differently photophysical and photovoltaic properties. They exhibited wide optical bandgaps of 1.88, 1.87, 1.89 and 1.91 eV and quite impressive hole mobilities of 6.01 × 10−4, 7.72 × 10−4, 1.83 × 10−3, and 1.29 × 10−3 cm2 V−1 s−1 for PIDT-O, PIDTT-O, PIDT-S and PIDTT-S, respectively. Through the photovoltaic test via using PIDT-O, PIDTT-O, PIDT-S and PIDTT-S as donor materials and [6,6]-phenyl-C-71-butyric acid methyl ester (PC71BM) as acceptor materials, all the PSCs presented the high open circuit voltages (Vocs) over 0.85 V, whereas the PIDT-S and PIDTT-S based devices showed higher power conversion efficiencies (PCEs) of 5.09% and 4.43%, respectively. Interestingly, the solvent vapor annealing (SVA) treatment on active layers could improve the fill factors (FFs) extensively for these four polymers. For PIDT-S and PIDTT-S, the SVA process improved the FFs exceeding 71%, and ultimately the PCEs were increased to 6.05%, and 6.12%, respectively. Therefore, this kind of wide band-gap polymers are potentially candidates as efficient electron-donating materials for constructing high-performance PSCs.


2010 ◽  
Vol 1245 ◽  
Author(s):  
Jenny H. Shim ◽  
W.K. Yoon ◽  
S.T. Hwang ◽  
S.W. Ahn ◽  
H.M. Lee

AbstractStudies have shown that wide bandgap material is required for high efficiency multi-junction solar cell applications. Here, we address proper deposition condition for high quality a-SiC:H films. In high power high pressure regime, we observed that the defect density get much lowered to the similar defect level of a-Si:H film with high H2 dilution. Single junction solar cells fabricated with the optimized condition show high open circuit voltage and low LID effect. The degradation after the LID test was only 13 % reduction of the efficiency indicating that a-SiC:H could be promising material for multi-junction solar cells.


2017 ◽  
Vol 25 (9) ◽  
pp. 755-763 ◽  
Author(s):  
Fredrik Larsson ◽  
Nina Shariati Nilsson ◽  
Jan Keller ◽  
Christopher Frisk ◽  
Volodymyr Kosyak ◽  
...  

2018 ◽  
Vol 10 (26) ◽  
pp. 22074-22082 ◽  
Author(s):  
Dhruba B. Khadka ◽  
Yasuhiro Shirai ◽  
Masatoshi Yanagida ◽  
Takeshi Noda ◽  
Kenjiro Miyano

2013 ◽  
Vol 773 ◽  
pp. 118-123
Author(s):  
Jing Yan Li ◽  
Xiang Bo Zeng ◽  
Hao Li ◽  
Xiao Bing Xie ◽  
Ping Yang ◽  
...  

We explain the experimental improvement in long wavelength response by hydrogen plasma treatment (HPT) in n/i interface. The absorption coefficient of the intrinsic microcrystalline silicon (μc-Si) is decreased in the low energy region (0.8~1.0 eV) by HPT, which indicates a lower defect density in μc-Si layer deposited with HPT than its counterpart without HPT. Simulation by one-dimensional device simulation program for the Analysis of Microelectronic and Photonic Structures (AMPS-1D) shows a higher long wavelength response in μc-Si solar cell if the defect density in intrinsic μc-Si layer is smaller. Our simulation results also disclose that the less defect density in intrinsic layer, the lower recombination rate and the higher electric field is. Higher electric field results in longer drift length which will promote collection of carriers generated by photons with long wavelength. Thus we deduce that HPT decreased defect density in absorber layer and improved the performance of μc-Si solar cells in long wavelength response.


2017 ◽  
Vol 10 (6) ◽  
pp. 1443-1455 ◽  
Author(s):  
Seo-Jin Ko ◽  
Quoc Viet Hoang ◽  
Chang Eun Song ◽  
Mohammad Afsar Uddin ◽  
Eunhee Lim ◽  
...  

A new series of wide band gap photovoltaic polymers based on a fluorinated phenylene-alkoxybenzothiadiazole unit with an optical band gap of over 1.90 eV are designed and utilized for high-performance single- and multi-junction bulk heterojunction polymer solar cells.


2018 ◽  
Vol 30 (12) ◽  
pp. 4008-4016 ◽  
Author(s):  
Kaiwen Sun ◽  
Jialiang Huang ◽  
Chang Yan ◽  
Aobo Pu ◽  
Fangyang Liu ◽  
...  

2018 ◽  
Vol 10 (27) ◽  
pp. 23235-23246 ◽  
Author(s):  
Jie Yang ◽  
Mohammad Afsar Uddin ◽  
Yumin Tang ◽  
Yulun Wang ◽  
Yang Wang ◽  
...  

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