Microstructure and Defects in Implanted Hipox-Structures

MRS Proceedings ◽

10.1557/proc-280-549 ◽

1992 ◽

Vol 280 ◽

Author(s):

N. David Theodore ◽

Peter L. Pegler

Keyword(s):

High Pressure ◽

Semiconductor Devices ◽

Structural Defects ◽

Silicon Substrates ◽

Pressure Oxidation ◽

Electrical Isolation ◽

And Behavior ◽

Dislocation Sources ◽

Induced Dislocation ◽

High Pressure Oxidation

ABSTRACTHigh-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. The effect of HIPOX-related stresses on isolation structures is of interest because structural-defects, if formed, could electrically degrade devices. The present investigation was performed to study the origin and behavior of defects in recessed HIPOX structures. The structures were exposed to a boron implant. The experimental observations indicate that glide dislocations arise when the following features are present: (i) HIPOX, (ii) recessed edge, (iii) boron implant. The origin and behavior of the defects are modelled and explained in terms of implant-induced dislocation-sources creating glide-dislocations in the structures. The microstructure of the structures described above, and defect-modelling is presented.

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Formation of defects in implanted hipox-structures

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131668 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1406-1407

Author(s):

Peter Pegler ◽

N. David Theodore ◽

Ming Pan

Keyword(s):

High Pressure ◽

Cross Section ◽

Semiconductor Devices ◽

Silicon Substrates ◽

Processing Conditions ◽

Pressure Oxidation ◽

Deep Trench ◽

Local Oxidation ◽

Trench Isolation ◽

And Behavior

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.

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A novel preparation process for LaCuO3 involving a high pressure oxidation of precursor derived from the perovskite structure: An appropriate route for doping with 57Fe Mössbauer probe

Solid State Sciences ◽

10.1016/j.solidstatesciences.2007.03.007 ◽

2007 ◽

Vol 9 (5) ◽

pp. 376-379 ◽

Cited By ~ 11

Author(s):

G. Demazeau ◽

A. Baranov ◽

G. Heymann ◽

H. Huppertz ◽

A. Sobolev ◽

...

Keyword(s):

High Pressure ◽

Perovskite Structure ◽

Preparation Process ◽

Pressure Oxidation ◽

57Fe Mössbauer ◽

High Pressure Oxidation

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The Effect of Ge Segregation on Oxidation of Si

MRS Proceedings ◽

10.1557/proc-105-277 ◽

1987 ◽

Vol 105 ◽

Cited By ~ 8

Author(s):

E. C. Frey ◽

N. R. Parikh ◽

M. L. Swanson ◽

M. Z. Numan ◽

W. K. Chu

Keyword(s):

High Pressure ◽

Low Temperature ◽

Epitaxial Layer ◽

Atmospheric Pressure ◽

Oxidation Rate ◽

Oxidation Temperature ◽

Pressure Oxidation ◽

Enhanced Oxidation ◽

High Pressure Oxidation

AbstractWe have studied oxidation of various Si samples including: Ge implanted Si, CVD and MBE grown Si(0.4–4% Ge) alloys, and MBE grown Si-Si(Ge) superlattices. The samples were oxidized in pyrogenic steam (800–1000°C, atmospheric pressure) and at low temperature and high pressure (740°C, 205 atm of dry O2). The oxidized samples were analyzed with RBS/channeling and ellipsometry.An enhanced oxidation rate was seen for all Ge doped samples, compared with rates for pure Si. The magnitude of the enhancement increased with decreasing oxidation temperature. For steam oxidations the Ge was segregated from the oxide and formed an epitaxial layer at the Si-SiO2 interface; the quality of the epitaxy was highest for the highest oxidation temperatures. For high pressure oxidation the Ge was trapped in the oxide and the greatest enhancement in oxidation rate (>100%) was observed.

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