Controlling of Microstructure Generation by Direct Holographic Etching of Semiconductor Substrates
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ABSTRACTControlling of microstructure generation was investigated in laser etching of n-GaAs. For single-beam etching and holographic etching with high ratios of average spacing of holographic grating to average spacing of microstructures (Λh/Λr), ripple structures were fabricated. Especially in p-polarization, spatial fluctuation was greater than that in s-polarization. This might occur because phase distortion inherent in the laser beam cannot be eliminated by the p-polarization beam irradiation. For holographic etching with small Λh/Λr ratios, ripple structures were changed into grating structures because these grating structures might be generated in phase with holographic gratings.
2021 ◽
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pp. 012054
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2000 ◽
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