Surface atomic-layer superconductors with Rashba/Zeeman-type spin-orbit coupling

In this article, we review the recent progress in surface atomic-layer superconductors on semiconductor substrates with Rashba/Zeeman-type spin-orbit coupling (SOC). After introduction of some of the basics of Rashba/Zeeman-type SOC and its effects on superconductivity, representative surface structures with relevant features are described in terms of their crystalline and electronic properties. This is followed by recent experimental studies that have revealed anomalous superconducting phenomena, which can be attributed to the effects of Rashba/Zeeman-type SOC. Future prospects, likely to be driven by instrumentational developments, are given as a concluding remark.

Influence of masking coatings geometric parameters on the manufacturing precision of semiconductor diodes disks-crystals

Considered is the qualification feature of dimensional abrasive jet processing when cutting masked semiconductor substrates on a silicon base into round discs-crystals. This approach is used when dividing stacked substrates into crystal disks, which have a tapered side surface and, accordingly, a difference in the size of the diameters at the ends of the crystal. The process of the formation of crystal disks is described and the dependence of the crystal taper on the masking method and the parameters of jet-abrasive processing is revealed. It is shown that crystal disks of the same size with a minimum taper can be obtained by increasing the processing time, manufacturing masking disks from wear-resistant materials, and choosing the optimal distance between the masking disks taking into account the substrate thickness.

Interface-controlled integration of functional oxides with Ge

Integration of oxides with semiconductor substrates merges functional properties of the two material systems. Significant progress has been made in controlled synthesis of crystalline oxides on silicon. Other semiconductors, such...

The sandblasting use prospects in the semiconductor diodes production

The process of manufacturing semiconductor components for the production of microwave diodes is considered. Scientifically based recommendations are presented for the separation of relatively thick, up to 1.5 mm, stacked silicon-based semiconductor substrates by the so-called sandblasting method, based on masking and pneumatic jet cutting of the substrate with micro abrasive powder. It is described the masking method and the principals of setting of the operating parameters of the packaged substrate jet processing, which were tested with a positive result on a pilot industrial sandblasting plant currently used by a domestic enterprise.