Fundamentals of Semiconductor Detectors for Ionizing Radiation

1993 ◽  
Vol 302 ◽  
Author(s):  
G.F. Knoll ◽  
D.S. Mcgregor
Keyword(s):  
Room Temperature ◽  
Pulse Height ◽  
Charge Trapping ◽  
Radiation Detectors ◽  
Charge Collection ◽  
Signal Pulse ◽  
Semiconductor Detectors ◽  
Modes Of Operation ◽  
Carrier Collection ◽  
Temperature Radiation

ABSTRACTThe modes of operation of semiconductor detectors are reviewed, together with the influence of charge carrier collection in developing a signal pulse for spectroscopic applications. Because of the importance of charge trapping in many semiconductors of interest in the fabrication of room temperature radiation detectors, the effects of incomplete charge collection are quantified. Calculated results are presented for the expected pulse height and energy resolution under a variety of charge collection conditions.

High quality planar Cd1-xMnxTe room-temperature radiation detectors

2021 ◽  
Vol 119 (6) ◽  
pp. 062103
Author(s):  
A. Brovko ◽  
P. Rusian ◽  
L. Chernyak ◽  
A. Ruzin
Keyword(s):  
Room Temperature ◽  
Radiation Detectors ◽  
High Quality ◽  
Temperature Radiation

scholarly journals Pulse-shape analysis in Cd0.9Zn0.1Te0.98Se0.02 room-temperature radiation detectors

2020 ◽  
Vol 116 (16) ◽  
pp. 162107 ◽  
Author(s):  
Sandeep K. Chaudhuri ◽  
Mohsin Sajjad ◽  
Krishna C. Mandal
Keyword(s):  
Shape Analysis ◽  
Pulse Shape ◽  
Room Temperature ◽  
Radiation Detectors ◽  
Pulse Shape Analysis ◽  
Temperature Radiation

Process Monitoring for Fabrication of Mercuric Iodide Room Temperature Radiation Detectors

1993 ◽  
Vol 324 ◽  
Author(s):  
J. M. Van Scyoc ◽  
T. E. Schlesinger ◽  
H. Yao ◽  
R. B. James ◽  
M. Natarajan ◽  
...  
Keyword(s):  
Room Temperature ◽  
Radiation Detectors ◽  
Electrical Contacts ◽  
Careful Study ◽  
Mercuric Iodide ◽  
Optical Functions ◽  
Processing Step ◽  
Material Choice ◽  
Temperature Radiation ◽  
Processing Steps

AbstractIn the fabrication of mercuric iodide room temperature radiation detectors, as in any semiconductor process, the quality of the final device can be very sensitive to the details of the processing steps. Each processing step can either reduce the intrinsic defects and those extrinsic defects introduced by earlier steps, or it can introduce new defects. In mercuric iodide these defects can act as trapping and recombination centers, thereby degrading immediate device performance or leading to long-term reliability problems. With careful study and monitoring of each step, the process can be modified to improve the end product. In this work we used several techniques to study processing steps and their effects. Photoluminescence spectroscopy and photoionization revealed defects introduced during processing. One critical step is the formation of electrical contacts, as both the material choice and deposition method have an impact. Four point probe sheet resistance methods were used to characterize the loss of material from the contact as it reacted with or moved into the bulk semiconductor. Ellipsometry was used to characterize the intrinsic optical functions of the material, and to study the effects of surface aging on these functions. Results from this work provide suggestions for the modification and monitoring of the detector fabrication process.

scholarly journals Post-growth Annealing of Cadmium Zinc Telluride Crystals for Room-Temperature Radiation Detectors

2012 ◽  
Vol 41 (10) ◽  
pp. 2912-2916 ◽  
Author(s):  
G. Yang ◽  
A.E. Bolotnikov ◽  
P.M. Fochuk ◽  
Y. Cui ◽  
G. S. Camarda ◽  
...  
Keyword(s):  
Room Temperature ◽  
Cadmium Zinc Telluride ◽  
Zinc Telluride ◽  
Radiation Detectors ◽  
Temperature Radiation ◽  
Cadmium Zinc

Synthesis of TlBr powder for preparation of room temperature radiation detectors by co-precipitation method

2010 ◽  
Vol 175 (1) ◽  
pp. 65-69
Author(s):  
Lin Quan ◽  
Shuping Gong ◽  
Jianqiao Liu ◽  
Fang Meng ◽  
Dongxiang Zhou ◽  
...  
Keyword(s):  
Room Temperature ◽  
Radiation Detectors ◽  
Precipitation Method ◽  
Temperature Radiation ◽  
Co Precipitation

Negative Capacitance Phenomena in CZT Room Temperature Radiation Detectors

2005 ◽  
Vol 480-481 ◽  
pp. 399-404
Author(s):  
Mahmoud A. Hassan
Keyword(s):  
Bias Voltage ◽  
Room Temperature ◽  
Bulk Material ◽  
Radiation Detector ◽  
Radiation Detectors ◽  
Negative Capacitance ◽  
Low Frequencies ◽  
Temperature Radiation ◽  
Czt Detectors ◽  
Small Voltage

CdZnTe , Cadmium zinc telluride (CZT) is an interesting room temperature radiation detector. This research paper is reporting a negative capacitance behavior of CZT detectors at bias voltages around 60V. Initially at 0V, the CZT capacitance is positive and decreases with bias voltage increase. At around 60V, the measured capacitance approaches zero, then with small voltage increase , capacitance value reverses sign and starts to increase in the negative direction with increasing bias voltage . This effect is stable at 100 kHz. The behavior of low and other quality detectors can differ, low quality detectors can show negative capacitance at low bias voltages and low frequencies. The initial explanation of this phenomena is due to non-uniform distribution of impurities inside the bulk material.

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