Plasma Polymerization of Fluorocarbon Thin Films on Glass and Metal Substrates

1993 ◽  
Vol 304 ◽  
Author(s):  
M. J. O'Keefe ◽  
J. M. Rigsbee

AbstractPlasma polymerization of thin, fluorocarbon films onto glass, low carbon steel, and aluminium foil substrates using a hexafluoroethane (C2F6) glow discharge in a parallel plate, rf-sputter system was studied. Continuous, 100 nm thick fluoropolymer films were obtained when a graphite sputter target was used as the cathode material. Depositions conducted without the use of a consumable cathode produce continuous but thin (<10 nm) films of fluorocarbon material. Analysis of the plasma by optical emission spectroscopy determined that the dominant species in the discharge was CF2 for both target configurations. An increase in the intensity of specific CF2 transitions was observed when the graphite target was used. Characterization of the deposited films by X-ray photoelectron spectroscopy of the C 1s and F 1s photoelectrons was used to determine the atomic F/C ratio and distribution of CF3, CF2, CF, C-CF, and C binding states. Films fabricated with the graphite target had a lower F/C ratio than depositions made without a consumable target. However, the distribution of binding states and the F/C ratio in the fluoropolymer was dependent on the substrate material. The results of the study indicate that the fluoropolymer film composition was significantly influenced by the underlying substrate material.

1993 ◽  
Vol 311 ◽  
Author(s):  
M. J. O'Keefe ◽  
S. Horiuchi ◽  
J.J. Chu ◽  
J.J. Rigsbee

ABSTRACTThe crystal structure of sputter deposited chromium thin films on Coming 7059 glass, polytetrafluoroethylene, and cold rolled (110) oriented low carbon steel α-Fe substrates was investigated as a function of O and C incorporation into the growing Cr film. The as-deposited crystal structure of the films was found by X-ray diffraction to be either highly oriented (110) BCC α-Cr or (200) oriented A-15 δ-Cr. Chemical analysis of the films by Auger electron spectroscopy determined that the δ-Cr phaseformed when the combined O and C impurity concentration in the film was ∼15-30 at.%. At total impurity concentrations above ∼30 at.% or below ∼10 at.% standard BCC α-Cr formed. The crystal structure of the films was not influenced by the substrate material. X-ray photoelectron spectroscopy of the Cr 2pl/2-2p3/2 orbitals indicated that the dominate binding state of both the BCC α-Cr and A-15 δ-Cr films was characteristic of elemental Cr. Vacuum annealing of the A-15 δ-Cr films at 500º for one hour transformed the crystal structure into BCC α-Cr without a measurable change in chemical composition. The incorporation of O and C into the growing Cr film is believed to impurity stabilize the A-15 structure and favor its formation over the BCC structure.


2012 ◽  
Vol 356 ◽  
pp. 012017
Author(s):  
G Bodurov ◽  
N Boshkov ◽  
L Lutov ◽  
T Ivanova ◽  
K A Gesheva

1992 ◽  
Vol 281 ◽  
Author(s):  
F. Santiago ◽  
D. Woody ◽  
T. K. Chu ◽  
C. A. Huber

ABSTRACTA new substrate material consisting of a buffer layer of a Ba-Si compound was developed by making use of the chemical reaction between BaF2 and Si. This substrate is very promising for the integration of IV-VI semiconductor materials with silicon. PbTe films of excellent quality, as determined by X-ray and Reflected High Energy Electron Diffraction spectra, have been deposited over (111)- and (100)-oriented silicon wafers of 3 inch diameter. These PbTe films are (100)-oriented irrespective of the Si orientation. X-ray photoelectron spectroscopy studies reveal very interesting chemistry at the interface between Ba-Si and Te. They suggest that BaTe may form between PbTe and Ba-Si at their interface. This interfacial region, which is of the order of only a few molecular layers, appears to be critical in the success of the deposition. Thermal cycling showed that the PbTe/BaSi/Si system is mechanically very stable. The possibility of a similar growth mechanism for the deposition of II-VI semiconductors such as CdTe is considered.


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