Development of Anisotropic GaAs (001) Surface Morphology During Molecular Beam Epitaxial Growth

ABSTRACTWe have studied the development of a microscopically ridged [110] Morphology during (001) GaAs Molecular beam epitaxy, as a function of layer thickness and growth temperature. The ridge slopes are consistent with the [110] separation required to incorporate a majority of adatoms by step-flow growth. Thus step-flow can be a dominant growth mode even on nominally on-axis (singular) substrates. With increasing epilayer thickness, the ridge slopes, and surface step density, remain approximately constant, while the ridge spacings, and therefore roughness amplitude, increase steadily.

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Dynamics of Periodic Step-Bunching During Growth on Vicinal GaAs(110) Surfaces: Computer Simulations and Experiments

MRS Proceedings ◽

10.1557/proc-312-327 ◽

1993 ◽

Vol 312 ◽

Author(s):

Mohan Krishnamurthy ◽

D. R. M. Williams ◽

P. M. Petroff

Keyword(s):

Computer Simulations ◽

Molecular Beam ◽

Vicinal Surfaces ◽

One Dimensional ◽

Step Flow ◽

Molecular Beam Epitaxial ◽

Diffusion Parameters ◽

Molecular Beam Epitaxial Growth ◽

Step Flow Growth ◽

And Diffusion

AbstractMolecular beam epitaxial growth on GaAs(110) vicinal surfaces results in the formation of periodic micro-facets. We compare experimental results with computer simulations of a simple one dimensional step-flow growth model. The simulations show that preferential adatom attachment to the down step in a step array results in the destruction of step uniformity. A kinetic limitation due to adatom diffusion length along the terraces leads to stabilization of a periodic array of step-bunches. We extend our simulations to show the effects of the attachment and diffusion parameters on the dynamics of facet evolution.

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The Dynamical Transition to Step-Flow Growth During Homoepitaxy of GaAs (001)

MRS Proceedings ◽

10.1557/proc-312-15 ◽

1993 ◽

Vol 312 ◽

Cited By ~ 1

Author(s):

B. G. Orr ◽

J. Sudijono ◽

M. D. Johnson

Keyword(s):

Scanning Tunneling Microscope ◽

Molecular Beam ◽

Scanning Tunneling ◽

Oscillatory Regime ◽

Step Flow ◽

Microscope Images ◽

Step Density ◽

Step Flow Growth ◽

Direct Correspondence ◽

Density Results

AbstractThe evolution of surface morphology of molecular-beam-epitaxy-grown GaAs (001) has been studied by scanning tunneling microscope. Images show that in the early stages of deposition the morphology oscillates between one -with twodimensional nucleation and coalescing islands, i.e. flat terraces. After the initial oscillatory regime, the system evolves to a dynamical steady state. This state is characterized by a constant step density. As such, the growth mode can be called a generalized step flow. Comparison with RHEED shows that there is a direct correspondence between the surface step density and the RHEED specular intensity. An increase in step density results in a decrease in specular intensity. Additionally, further deposition beyond 120 monolayers (up to 1450 monolayers) display a slowly increasing surface roughness.

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Step-flow growth of graphene-boron nitride lateral heterostructures by molecular beam epitaxy

2D Materials ◽

10.1088/2053-1583/ab89e7 ◽

2020 ◽

Vol 7 (3) ◽

pp. 035014 ◽

Cited By ~ 1

Author(s):

James Thomas ◽

Jonathan Bradford ◽

Tin S Cheng ◽

Alex Summerfield ◽

James Wrigley ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Boron Nitride ◽

Molecular Beam ◽

Step Flow ◽

Step Flow Growth

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Kinetics of Ge Segregation in the Presence of Sb During Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-220-217 ◽

1991 ◽

Vol 220 ◽

Cited By ~ 12

Author(s):

S. Fukatsu ◽

K. Fujita ◽

H. Yaguchi ◽

Y. Shiraki ◽

R. Ito

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Lower Limit ◽

Molecular Beam ◽

Growth Direction ◽

High Concentration ◽

Mbe Growth ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth ◽

Kinetics Of

Kinetics of Ge segregation during molecular beam epitaxial growth is described. It is shown that the Ge segregation is self-limited in Si epitaxial overlayers due to a high concentration effect when the Ge concentration exceeds 0.01 monolayer (ML). As a result, segregation profiles of Ge are found to decay non-exponentially in the growth direction. This unusual Ge segregation was found to be suppressed with an adlayer of strong segregant, Sb, during the kinetic MBE growth. We develop a novel scheme to realize sharp Si/Ge interfaces with strong segregante. Lower limit of the effective amount of Sb for this was found to be 0.75 ML.

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Step-flow growth of GaN(0001) on 4H-SiC(0001) by plasma-assisted molecular beam epitaxy

physica status solidi (a) ◽

10.1002/pssa.201533001 ◽

2016 ◽

Vol 213 (9) ◽

pp. 2498-2502 ◽

Cited By ~ 2

Author(s):

Tobias Tingberg ◽

Anders Larsson ◽

Tommy Ive

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Step Flow ◽

Step Flow Growth

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Unit Cell Distortion and Surface Morphology Diversification in SnTe/CdTe(001) Topological Crystalline Insulator Heterostructure: Influence of Defects’ Azimuthal Distribution

Journal of Materials Chemistry C ◽

10.1039/d1tc05733b ◽

2022 ◽

Author(s):

Adrian Sulich ◽

Elżbieta Łusakowska ◽

Wojciech Wołkanowicz ◽

P Dziawa ◽

Janusz Sadowski ◽

...

Keyword(s):

Surface Morphology ◽

Epitaxial Growth ◽

Molecular Beam ◽

Azimuthal Distribution ◽

Molecular Beam Epitaxial ◽

Varying Thickness ◽

Zinc Blende ◽

Challenges And Opportunities ◽

Molecular Beam Epitaxial Growth ◽

Topological Crystalline Insulator

Challenges and opportunities arising upon molecular-beam-epitaxial growth of topological crystalline insulator heterostructures composed of a rock-salt SnTe(001) layer of varying thickness (from 80 to 1000 nm) and a zinc-blende 4-μm-thick...

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Influence of Surface Step Density on the Growth of Mercury Cadmium Telluride by Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-340-575 ◽

1994 ◽

Vol 340 ◽

Cited By ~ 10

Author(s):

T. Colin ◽

D. Minsås ◽

S. Gjøen ◽

R. Sizmann ◽

S. Løvold

Keyword(s):

Molecular Beam Epitaxy ◽

Cadmium Telluride ◽

Mercury Cadmium Telluride ◽

Molecular Beam ◽

Step Flow ◽

Surface Steps ◽

Step Density ◽

Cdznte Substrates ◽

Free Material ◽

First Time

ABSTRACTWe report for the first time the results of structural and optical characterizations performed on Mercury Cadmium Telluride (MCT) grown simultaneously by Molecular Beam Epitaxy (MBE) on (11 1)B 4°misoriented and (211)B CdZnTe substrates. These two Te-terminated surfaces differ only by the density and the nature of their surface steps. In MBE conditions we do not observe any difference of incorporation between the two orientations at low growth temperatures and only a slight difference in Te and Hg incorporations above 200°C. This study confirms that the growth mode is essentially the same on both orientations and the growth proceeds by step-flow. The higher step density on (211) surfaces allows broader tolerances on the substrate temperature for the growth of twin-free material. It also leads to higher crystalline quality for the lowest temperatures. These observations have been confirmed by magneto-absorption experiments on superlattices grown simultaneously on both orientations.

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