Ab Initio Molecular Dynamics Study of Al, Ga and Si Adsorption on the Si(001) Surface
Keyword(s):
ABSTRACTThe adsorption of Al, Ga and Si on the Si(001) surface is studied by the ab initio molecular dynamics (Car-Parrinello) method based on the norm-conserving pseudopotential. In the stable structures obtained for half mono-layer coverage( ө = 1/2), these ad-atoms form dimers, but the dimer configurations are different. Al and Ga atoms form parallel dimers whose dimerization direction is parallel to that of substrate Si-dimers, while adsorbed Si atoms form (dense) orthogonal dimers. The electronic origin of the difference in the stable configurations among Al, Ga and Si ad-atoms is analyzed by calculating the local density of states (LDOS) of each atom.
2002 ◽
Vol 17
(06n07)
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pp. 798-803
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Keyword(s):
1993 ◽
Vol 07
(01n03)
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pp. 262-265
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Keyword(s):
Generation of phonon density of states and thermal scattering law using ab initio molecular dynamics
2017 ◽
Vol 101
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pp. 461-467
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