Raman and Photoluminescence Characterization of FIB Patterned AIGaAs/GaAs Multiple Quantum Wells

1993 ◽  
Vol 324 ◽  
Author(s):  
Ahn Goo Choo ◽  
Xuelong. Cao ◽  
Spirit Tlali ◽  
Howard E. Jackson ◽  
Peter Chen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Raman Scattering ◽  
Quantum Wells ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Pl Spectra ◽  
Spatially Resolved

AbstractRaman and photoluminescence (PL) spectra have been used to characterize A10.3Ga0.7As/GaAs multiple quantum well (MQW) structures that have been patterned by focused ion beam (FIB) implantation followed by rapid thermal annealing (RTA). Microprobe Raman scattering is used to identify the appropriate RTA and FIB implantation conditions that provide for removal of implantation-induced damage and for compositional intermixing. FIB patterned wire-like structures are characterized by spatially resolved PL spectra.

Raman and photoluminescence characterization of AlGaAs multiple-quantum-well structures formed by focused-ion-beam implantation

1992 ◽  
Author(s):  
Howard E. Jackson ◽  
Ahn G. Choo ◽  
Bernard L. Weiss ◽  
Joseph T. Boyd ◽  
Andrew J. Steckl ◽  
...  
Keyword(s):  
Quantum Well ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Ion Beam Implantation

Photoluminescence and Raman Scattering from (CdSe)m,(ZnSe)n-ZnSe Multiple Quantum Wells Under Hydrostatic Pressure

1995 ◽  
Vol 406 ◽  
Author(s):  
J. Q. Zhang ◽  
Z. X. Liu ◽  
Z. P. Wang ◽  
H. X. Han ◽  
G. H. Li ◽  
...  
Keyword(s):  
High Pressure ◽  
Hydrostatic Pressure ◽  
Quantum Well ◽  
Raman Scattering ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Phonon Modes ◽  
Quantum Well Structure

AbstractThe photoluminescence and Raman scattering of {|(CdSe)1 (ZnSe)3|14-(ZnSe)130} × 5 multiple quantum well structure have been investigated at 77 K and under hydrostatic pressure up to 7 GPa. Resonant excitations have been accomplished by turning the electronic levels under hydrostatic high pressure. Two kind of excitons and ZnSe-like LO phonon modes as well as their pressure behavior are presented.

Growth and Characterization Of GexSi1−x/ Si Multiple Quantum Well Structures

1992 ◽  
Vol 263 ◽  
Author(s):  
D.W. Greve ◽  
R. Misra ◽  
M.A. Capano ◽  
T.E. Schlesinger
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Small Variation ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
High Quality ◽  
Quantum Well Structures ◽  
X Ray

ABSTRACTWe report on the growth and characterization of multiple quantum well structures by UHV/ CVD epitaxy. X- ray diffraction is used to verify the expected layer periodicity and to determine the quantum well thickness. Photoluminescence measurements show peaks which we associate with recombination of excitons in the quantum wells. The measurements are consistent with high quality layers with small variation in quantum well thickness across a wafer.

Anomalous formation of InGaN/GaN multiple-quantum-well nanopillar arrays by focused ion beam milling

2007 ◽  
Vol 18 (44) ◽  
pp. 445301 ◽  
Author(s):  
Shang-En Wu ◽  
Chuan-Pu Liu ◽  
Tao-Hung Hsueh ◽  
Hung-Chin Chung ◽  
Chih-Chin Wang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Anomalous Formation ◽  
Nanopillar Arrays ◽  
Focused Ion Beam Milling

Focused Ion Beam Milled InGaN/GaN Multiple Quantum Well Nanopillars

2008 ◽  
Vol 47 (4) ◽  
pp. 3130-3133 ◽  
Author(s):  
Shang-En Wu ◽  
Tao-Hung Hsueh ◽  
Chuan-Pu Liu ◽  
Jinn-Kong Sheu ◽  
Wei-Chih Lai ◽  
...  
Keyword(s):  
Quantum Well ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Multiple Quantum Well ◽  
Multiple Quantum

Optical Channel Waveguides in AlGaAs Multiple Quantum Well Structures Formed by Focused Ion Beam Induced Compositional Mixing

1992 ◽  
Vol 281 ◽  
Author(s):  
Mukesh Kumar ◽  
Gregory N. De Brabander ◽  
Peter Chen ◽  
Joseph T. Boyd ◽  
Andrew J. Steckl ◽  
...  
Keyword(s):  
Quantum Well ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Multiple Quantum Well ◽  
Propagation Loss ◽  
Optical Channel ◽  
Multiple Quantum ◽  
Mixing Depth ◽  
Quantum Well Structures ◽  
Mode Field

ABSTRACTOptical channel waveguiding in AlGaAs multiple quantum well structures formed by compositional mixing implemented by focused ion beam (FIB) implantation is demonstrated. To achieve selective mixing, Si is FIB implanted with a dose of 5×1014 cm−2 followed by RTA at 950°C for 10 s. Raman microprobe spectra are used to characterize the lateral variation of mixing. Propagation loss in a channel waveguide is measured. Measurement of the waveguide mode field distribution allows for the determination of changes in refractive index due to mixing and an approximate mixing depth.

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