Characterization of InGaAs/Inp Epitaxial Layers Grown Over V-Groove Patterned Inp Substrates Using Gas Source Molecular Beam Epitaxy

1993 ◽  
Vol 326 ◽  
Author(s):  
N.J. Bulitka ◽  
A. Gupta ◽  
B.J. Robinson ◽  
D.A. Thompson ◽  
G.C. Weatherly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Gas Source ◽  
Inp Substrates

scholarly journals Gas‐source molecular‐beam epitaxy using Si2H6and GeH4and x‐ray characterization of Si1−xGex(0≤x≤0.33) alloys

1992 ◽  
Vol 71 (10) ◽  
pp. 4916-4919 ◽  
Author(s):  
S. H. Li ◽  
S. W. Chung ◽  
J. K. Rhee ◽  
P. K. Bhattacharya
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray ◽  
Gas Source

Growth by molecular‐beam epitaxy and characterization of (InAs)m(GaAs)mshort period superlattices on InP substrates

1990 ◽  
Vol 68 (3) ◽  
pp. 1282-1286 ◽  
Author(s):  
Hideo Toyoshima ◽  
Takayoshi Anan ◽  
Kenichi Nishi ◽  
Toshinari Ichihashi ◽  
Akihiko Okamoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inp Substrates

Characterization of strain relaxation in As ion implanted Si1−xGex epilayers grown by gas source molecular beam epitaxy

1998 ◽  
Vol 72 (7) ◽  
pp. 845-847 ◽  
Author(s):  
Lyu-fan Zou ◽  
Z. G. Wang ◽  
D. Z. Sun ◽  
T. W. Fan ◽  
X. F. Liu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Gas Source ◽  
Ion Implanted

Photoreflectance Characterization of Ordered/Disordered GaAs0.5Sb0.5layers Grown on InP Substrates by Molecular Beam Epitaxy

2003 ◽  
Vol 42 (Part 1, No. 7A) ◽  
pp. 4288-4289 ◽  
Author(s):  
Yuichi Kawamura ◽  
Masanobu Amano ◽  
Koichi Ouchi ◽  
Naohisa Inoue
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inp Substrates

Arsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grown by gas source molecular beam epitaxy

1995 ◽  
Vol 11 (4) ◽  
pp. 396-399 ◽  
Author(s):  
J. M. Fernández ◽  
M. H. Xie ◽  
A. Matsumura ◽  
S. M. Mokler ◽  
J. Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Gas Source ◽  
Doping Behaviour ◽  
Arsenic Incorporation

Infra-red characterization of carbonization of Si surfaces by gas source molecular beam epitaxy

1997 ◽  
Vol 6 (12) ◽  
pp. 1772-1776 ◽  
Author(s):  
M.B. el Mekki ◽  
J. Pascual ◽  
M. Androulidaki ◽  
K. Zekentes ◽  
J. Camassel ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gas Source ◽  
Infra Red

Growth and characterization of Si/SiGe microstructures on patterned Si substrates using gas source molecular beam epitaxy

1995 ◽  
Vol 150 ◽  
pp. 950-954 ◽  
Author(s):  
J. Zhang ◽  
X.M. Zhang ◽  
A. Matsumura ◽  
A. Marinopoulou ◽  
J. Hartung ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Substrates ◽  
Gas Source
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