The Thermal Conductivity of Porous Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
W. Lang ◽  
A. Drost ◽  
P. Steiner ◽  
H. Sandmaier
Keyword(s):  
Thermal Conductivity ◽  
Wave Propagation ◽  
Porous Silicon ◽  
Thermal Wave ◽  
Mesoporous Material ◽  
Measurement Method ◽  
Silicon Oxide ◽  
Nanoporous Material ◽  
Type Silicon ◽  
P Type

ABSTRACTThe thermal conductivity of porous silicon is measured as prepared and after oxidation. The measurement method uses thermal wave propagation in the porous film. We investigate three types of porous silicon: Nanoporous p-type silicon, nanoporous n-type silicon and mesoporous p+-type silicon. The nanoporous material shows a thermal conductivity in the region of 1.2 W/mK to 1.8 W/mK as prepared and after oxidation. This value is close to silicon oxide. The mesoporous material shows a high thermal conductivity of 80 W/mK as prepared which drops to 2.7 W/mK after oxidation.

Development of Silicon-Based UV-Photodetector Prototypes using Photoluminescent Nanocrystalline Silicon Overlayers

2000 ◽  
Vol 638 ◽  
Author(s):  
Carlos Navarro ◽  
Luis F. Fonseca ◽  
Guillermo Nery ◽  
O. Resto ◽  
S. Z. Weisz
Keyword(s):  
Porous Silicon ◽  
Active Zone ◽  
Silicon Detector ◽  
Nanocrystalline Silicon ◽  
Incident Radiation ◽  
Enhancement Effect ◽  
Type Silicon ◽  
Quantum Confinement Effects ◽  
Si Films ◽  
P Type

AbstractThe maximum photoresponse of a normal silicon photodetector, that uses a p-n junction as the active zone, is obtained when the incident radiation wavelength is around 750nm. This response diminishes significantly when the incident radiation is near or in the UV region. Meanwhile, nanocrystalline silicon (nc-Si) films with high transparency above 650nm and high absorbance in the UV can be prepared. By quantum confinement effects, a fraction of this absorbed UV energy is re-emitted as visible photons that can be used by the junction. We study the enhancement of the UV-photoresponse of two silicon detector prototypes with a silicon p-n junction active zone and with a photoluminescent nc-Si overlayer. One prototype is made with a porous silicon/n-type silicon/p-type silicon/p++-silicon/metal configuration and the other with an Eu-doped Si-SiO2 overlayer instead of the porous silicon one. The comparison between both prototypes and the control is presented and discussed stressing on the enhancement effect introduced by the photoluminescent overlayers, stability and reproducibility.

scholarly journals Применение селективного контакта MoO-=SUB=-x-=/SUB=-/p-Si для оценки деградации приповерхностной области кремния

2020 ◽  
Vol 46 (24) ◽  
pp. 37
Author(s):  
Д.А. Кудряшов ◽  
А.С. Гудовских ◽  
А.А. Максимова ◽  
А.И. Баранов ◽  
А.В. Уваров ◽  
...  
Keyword(s):  
Surface Layer ◽  
Magnetron Sputtering ◽  
Silicon Surface ◽  
Silicon Oxide ◽  
Near Surface ◽  
Type Silicon ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Degree Of Damage ◽  
P Type

The possibility of evaluation the degree of damage to the near-surface layer of p-type silicon using a selective contact based on MoOx/p-Si is shown. A strong sensitivity of the current-voltage characteristics to the states on the silicon surface formed during the deposition of silicon oxide by magnetron sputtering is demonstrated.

FEATURES OF P-TYPE SILICON COMBUSTION IN THE SOLID FUEL PSI-NACLO4 · H2O COMPOSITES

2020 ◽  
Author(s):  
V. N. MIRONOV ◽  
◽  
O. G. PENYAZKOV ◽  
P. N. KRIVOSHEYEV ◽  
Y. A. BARANYSHYN ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Solid Fuel ◽  
Type Silicon ◽  
Oxidative Reactions ◽  
P Type ◽  
Propagation Velocities

The ability of porous silicon to actively participate in oxidative reactions leading to combustion and explosion when interacting with reagents in the pores was established about twenty years ago [1] but because of the high propagation velocities of these physicochemical transformations (102-103 m/s), it was di©cult to understand their mechanisms.

Charge Exchange Mechanism Responsible for P‐Type Silicon Dissolution during Porous Silicon Formation

1989 ◽  
Vol 136 (10) ◽  
pp. 3043-3046 ◽  
Author(s):  
F. Gaspard ◽  
A. Bsiesy ◽  
M. Ligeon ◽  
F. Muller ◽  
R. Herino
Keyword(s):  
Porous Silicon ◽  
Charge Exchange ◽  
Exchange Mechanism ◽  
Type Silicon ◽  
P Type ◽  
Silicon Dissolution
Sign in / Sign up

Export Citation Format

Share Document