Применение селективного контакта MoO-=SUB=-x-=/SUB=-/p-Si для оценки деградации приповерхностной области кремния
2020 ◽
Vol 46
(24)
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pp. 37
Keyword(s):
The possibility of evaluation the degree of damage to the near-surface layer of p-type silicon using a selective contact based on MoOx/p-Si is shown. A strong sensitivity of the current-voltage characteristics to the states on the silicon surface formed during the deposition of silicon oxide by magnetron sputtering is demonstrated.
Keyword(s):
2014 ◽
Vol 11
(11-12)
◽
pp. 1697-1702
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Keyword(s):
2014 ◽
Vol 161
(5)
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pp. E97-E103
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Keyword(s):
2007 ◽
Vol 112
(1)
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pp. 303-307
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Keyword(s):
2011 ◽
Vol 23
(4)
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pp. 913-920
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2001 ◽
Vol 66
(1-4)
◽
pp. 163-170
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Keyword(s):
2007 ◽
Vol 390
(1-2)
◽
pp. 151-154
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Keyword(s):