Passivation of n- and p-Type Silicon Surfaces With Spray-Coated Sol-Gel Silicon Oxide Thin Film

2020 ◽  
Vol 67 (11) ◽  
pp. 5045-5052
Author(s):  
Jayshree Bhajipale ◽  
Anil Kottantharayil
Keyword(s):  
Thin Film ◽  
Silicon Oxide ◽  
Sol Gel ◽  
Silicon Surfaces ◽  
Oxide Thin Film ◽  
Type Silicon ◽  
P Type

p-Type hydrogenated silicon oxide thin film deposited near amorphous to microcrystalline phase transition and its application to solar cells

2011 ◽  
Vol 11 (1) ◽  
pp. S47-S49 ◽  
Author(s):  
Kobsak Sriprapha ◽  
Nopphadol Sitthiphol ◽  
Puchong Sangkhawong ◽  
Vichit Sangsuwan ◽  
Amornrat Limmanee ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Transition ◽  
Solar Cells ◽  
Silicon Oxide ◽  
Oxide Thin Film ◽  
Hydrogenated Silicon ◽  
P Type

Investigation of p-type nanocrystalline silicon oxide thin film prepared at various growth temperatures

2019 ◽  
Vol 229 ◽  
pp. 392-401 ◽  
Author(s):  
Sangho Kim ◽  
S.M. Iftiquar ◽  
Chonghoon Shin ◽  
Jinjoo Park ◽  
Junsin Yi
Keyword(s):  
Thin Film ◽  
Silicon Oxide ◽  
Nanocrystalline Silicon ◽  
Oxide Thin Film ◽  
P Type

Mixed-phase p-type silicon oxide containing silicon nanocrystals and its role in thin-film silicon solar cells

2010 ◽  
Vol 97 (21) ◽  
pp. 213502 ◽  
Author(s):  
P. Cuony ◽  
M. Marending ◽  
D. T. L. Alexander ◽  
M. Boccard ◽  
G. Bugnon ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Silicon Nanocrystals ◽  
Silicon Oxide ◽  
Mixed Phase ◽  
Silicon Solar Cells ◽  
Type Silicon ◽  
Thin Film Silicon ◽  
P Type

Organic solar cells employing magnetron sputtered p-type nickel oxide thin film as the anode buffer layer

2010 ◽  
Vol 94 (12) ◽  
pp. 2332-2336 ◽  
Author(s):  
Sun-Young Park ◽  
Hye-Ri Kim ◽  
Yong-Jin Kang ◽  
Dong-Ho Kim ◽  
Jae-Wook Kang
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Nickel Oxide ◽  
Buffer Layer ◽  
Organic Solar Cells ◽  
Oxide Thin Film ◽  
Anode Buffer Layer ◽  
P Type ◽  
Type Nickel ◽  
Nickel Oxide Thin Film

Metal Oxide Thin Film Transistor with Nano Inorganic Gate Dielectric : Material Chemistry, Nanoscience, Solution Processing and Electronics

2021 ◽  
Vol 23 (09) ◽  
pp. 1078-1085
Author(s):  
A. Kanni Raj ◽  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Barium Zirconate ◽  
Operating Voltage ◽  
Metal Oxide Thin Film

Indium Lead Oxide (ILO) based Metal Oxide Thin Film Transistor (MOTFT) is fabricated with Lead Barium Zirconate (PBZ) gate dielectric. PBZ is formed over doped silicon substrate by cheap sol-gel process. Thin film PBZ is analysed with X-ray Diffraction (XRD), Ultra-Violet Visible Spectra (UV-Vis) and Atomic Force Microscope (AFM). IZO is used as bottom gate to contact Thin Film Transistor (TFT). This device needs only 5V as operating voltage, and so is good for lower electronics <40V. It shows excellent emobility 4.5cm2/V/s, with on/off ratio 5×105 and sub-threshold swing 0.35V/decade.

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