A Low Temperature Vaporization of Pb(THD)2 with NH3

MRS Proceedings ◽

10.1557/proc-361-349 ◽

1994 ◽

Vol 361 ◽

Author(s):

June Key Lee ◽

Wan In Lee ◽

Seshu B. Desu

Keyword(s):

Molecular Structure ◽

Thin Films ◽

Low Temperature ◽

Elemental Analysis ◽

Carrier Gas

ABSTRACTPb(THD)2 is one of the most popular CVD precursors for lead. It was found in this study that the volatility of Pb(THD)2 can be considerably improved by using ammonia as a carrier gas. An adduct between Pb(THD)2 and NH3 is generated in-situ, when the NH3 carrier gas is passed through the bubbler containing Pb(THD)2. The ammoniated precursor was isolated and its molecular structure was characterized by elemental analysis, infrared and NM.R. PbO thin films could be prepared with this precursor system while maintaining the bubbler temperature at 110° C, which is considerably lower than the temperature used with the Pb(THD)2 precursor in the commonly used carrier gas.

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In Situ GISAXS Investigation of Low-Temperature Aging in Oriented Surfactant-Mesostructured Titania Thin Films

The Journal of Physical Chemistry C ◽

10.1021/acs.jpcc.5b06945 ◽

2015 ◽

Vol 119 (40) ◽

pp. 22970-22984 ◽

Cited By ~ 13

Author(s):

Suraj Nagpure ◽

Saikat Das ◽

Ravinder K. Garlapalli ◽

Joseph Strzalka ◽

Stephen E. Rankin

Keyword(s):

Thin Films ◽

Low Temperature ◽

Low Temperature Aging ◽

Temperature Aging

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In situ one-step synthesis of p-type copper oxide for low-temperature, solution-processed thin-film transistors

Journal of Materials Chemistry C ◽

10.1039/c7tc00574a ◽

2017 ◽

Vol 5 (10) ◽

pp. 2524-2530 ◽

Cited By ~ 36

Author(s):

Ao Liu ◽

Shengbin Nie ◽

Guoxia Liu ◽

Huihui Zhu ◽

Chundan Zhu ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Low Temperature ◽

Thin Film Transistors ◽

Solution Processed ◽

Naoh Solution ◽

Temperature Solution ◽

One Step ◽

P Type

Solution-processed p-type Cu2O thin films were fabricated via in-situ reaction of CuI film in NaOH solution and their applications in thin-film transistors were successfully demonstrated.

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Low Temperature MOCVD-Processed Alumina Coatings

Advances in Science and Technology ◽

10.4028/www.scientific.net/ast.45.1184 ◽

2006 ◽

Vol 45 ◽

pp. 1184-1193 ◽

Cited By ~ 8

Author(s):

Alain Gleizes ◽

Maria Magdalena Şovar ◽

Diane Samelor ◽

C. Vahlas

Keyword(s):

Thin Films ◽

Low Temperature ◽

Gas Phase ◽

Water Vapour ◽

Elemental Analysis ◽

Deposition Temperature ◽

Alumina Coatings ◽

Pure Alumina ◽

Low Pressure Mocvd ◽

Mocvd Technique

We first present a Review about the preparation of alumina as thin films by the technique of MOCVD at low temperature (550°C and below). Then we present our results about thin films prepared by the low pressure MOCVD technique, using aluminium tri-isopropoxide as a source, and characterized by elemental analysis (EMPA, EDS, ERDA, RBS), FTIR, XRD and TGA. The films were grown in a horizontal, hot-wall reactor, with N2 as a carrier gas either pure or added with water vapour. The deposition temperature was varied in the range 350-550°C. The films are amorphous. Those prepared at 350°C without water added in the gas phase have a formula close to AlOOH. Those deposited above 415°C are made of pure alumina Al2O3. When water is added in the gas phase, the films are pure alumina whatever the deposition temperature.

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