Structural Properties of Single Crystal Rare-Earth Thin Films Y and Gd Grown by Molecular Beam Epitaxy

1984 ◽  
Vol 37 ◽  
Author(s):  
J. Kwo ◽  
D. B. McWhan ◽  
M. Hong ◽  
E. M. Gyorgy ◽  
L. C. Feldman ◽  
...  
Keyword(s):  
Rare Earth ◽  
Single Crystal ◽  
Molecular Beam ◽  
Rare Earth Metals ◽  
Earth Metal ◽  
Metal Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Channeling

AbstractBy means of metal MBE technique with in-situ RHEED characterization, high-quality single crystal rare earth metal films of yttrium and gadolinium were grown as a necessary requirement for studying Gd/Y superlattices. The key step of this successful growth is the employment of the single-crystal Nb film as a buffer layer to eliminate the interaction of rare earth metals with most substrates. Structural analyses by X-ray diffraction and ion channeling show that these crystals exhibit not only complete texture of [00.1], but also narrow rocking curves both perpendicular (00.2) and parallel (10.0) to the film.

X-Ray Diffraction Study of Rare Earth Epitaxial Structures Grown by MBE onto (111) GaAs

1989 ◽  
Vol 151 ◽  
Author(s):  
W. R. Bennett ◽  
R. F. C. Farrow ◽  
S. S. P. Parkin ◽  
E. E. Marinero
Keyword(s):  
Rare Earth ◽  
Molecular Beam Epitaxy ◽  
Rare Earth Metal ◽  
Molecular Beam ◽  
Earth Metal ◽  
Magnetic Ordering ◽  
Metal Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Strain Components

ABSTRACTWe report on the new epitaxial system LaF3/Er/Dy/Er/LaF3/GaAs (111) grown by molecular beam epitaxy. X-ray diffraction studies have been used to determine the epitaxial relationships between the rare earths, the LaF3 and the substrate. Further studies of symmetric and asymmetric reflections yielded the in-plane and perpendicular strain components of the rare earth layers. Such systems may be used to probe the effects of magnetoelastic interactions and dimensionality on magnetic ordering in rare earth metal films and multilayers.

Two series of rare earth metal-rich ternary aluminium transition metallides – RE6Co2Al (RE=Sc, Y, Nd, Sm, Gd–Tm, Lu) and RE6Ni2.25Al0.75 (RE=Y, Gd–Tm, Lu)

2018 ◽  
Vol 73 (11) ◽  
pp. 927-942 ◽  
Author(s):  
Frank Stegemann ◽  
Oliver Janka
Keyword(s):  
Rare Earth ◽  
Single Crystal ◽  
Rare Earth Metal ◽  
Magnetic Measurements ◽  
Earth Metal ◽  
Nominal Composition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Antiferromagnetic Ordering ◽  
Arc Melting

AbstractThe rare earth metal-rich cobalt and nickel aluminium compounds with the general compositions RE6Co2Al (RE=Sc, Y, Nd, Sm, Gd–Tm, Lu) and RE6Ni2.25Al0.75 (RE=Y, Gd–Tm, Lu) have been synthesised from the elements by arc-melting, followed by annealing. Single-crystal X-ray diffraction experiments on Y6Co2.02(1)Al0.98(1) (Ho6Co2Ga type; Immm; a=944.1(2), b=952.4(2), c=999.0(2) pm; wR2=0.0452, 1123 F2 values, 35 variables) and Y6Ni2.26(1)Al0.74(1) (Ho6Co2Ga type; Immm; a=938.30(5), b=959.45(5), c=996.05(6) pm; wR2=0.0499, 1131 F2 values, 35 variables) revealed that the compounds form solid solutions according to the general formula RE6(Co/Ni)2+xAl1−x with different homogeneity ranges. The compounds of the Ni series can be obtained in X-ray pure form only with the nominal composition RE6Ni2.25Al0.75. A significant increase of the U22 component of the anisotropic displacement parameters of the Co/Ni2 atoms (4g site) was observed that requires a description of the structure with a split-position model at RT. Further investigations by low temperature (90 K) single-crystal X-ray diffraction experiments of Y6Co2.02(1)Al0.98(1) showed a significant decrease of U22. Magnetic measurements were conducted on the X-ray pure members of the RE6Co2Al (RE=Y, Dy–Tm, Lu) series. Antiferromagnetic ordering was observed for the members with unpaired f electrons with Néel temperatures up to TN=48.0(1) K and two spin reorientations for Dy6Co2Al.

Synthesis and structure determination of Ce6Cd23Te: a new chalcogen-containing member of theRE6Cd23T family (REis a rare-earth metal and T is a late group 14, 15 and 16 element)

2017 ◽  
Vol 73 (2) ◽  
pp. 121-125 ◽  
Author(s):  
Griffen Desroches ◽  
Svilen Bobev
Keyword(s):  
Rare Earth ◽  
Single Crystal ◽  
Rare Earth Metal ◽  
Earth Metal ◽  
X Ray Diffraction ◽  
Space Group ◽  
X Ray ◽  
Valence Fluctuations ◽  
High Temperature Reaction ◽  
Pearson Symbol

The ternary phase hexacerium tricosacadmium telluride, Ce6Cd23Te, was synthesized by a high-temperature reaction of the elements in sealed Nb ampoules and was structurally characterized by powder and single-crystal X-ray diffraction. The structure, established from single-crystal X-ray diffraction methods, is isopointal with the Zr6Zn23Si structure type (Pearson symbolcF120, cubic space groupFm-3m), a filled version of the Th6Mn23structure with the same space group and Pearson symbolcF116. Though no Cd-containing rare-earth metal binaries are known to form with this structure, it appears that the addition of small amounts of ap-block element allows the formation of such interstitially stabilized ternary compounds. Temperature-dependent direct current (dc) magnetization measurements suggest local-moment magnetism arising from the Ce3+ground state, with possible valence fluctuations at low temperature, inferred from the deviations from the Curie–Weiss law.

Amorphization of nanocrystalline 3C-SiC irradiated with Si+ ions

2010 ◽  
Vol 25 (12) ◽  
pp. 2341-2348 ◽  
Author(s):  
W. Jiang ◽  
H. Wang ◽  
I. Kim ◽  
Y. Zhang ◽  
W.J. Weber
Keyword(s):  
Grain Size ◽  
Single Crystal ◽  
Room Temperature ◽  
Ex Situ ◽  
Bulk Single Crystal ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Channeling

Irradiation-induced amorphization in nanocrystalline and single-crystal 3C-SiC has been studied using 1 MeV Si+ ions under identical irradiation conditions at room temperature and 400 K. The disordering behavior has been characterized using in situ ion channeling and ex situ x-ray diffraction methods. The results show that, compared with single-crystal 3C-SiC, full amorphization of small 3C-SiC grains (˜3.8 nm in size) at room temperature occurs at a slightly lower dose. Grain size decreases with increasing dose until a fully amorphized state is attained. The amorphization dose increases at 400 K relative to room temperature. However, at 400 K, the amorphization dose for 2.0 nm grains is about a factor of 4 and 8 smaller than for 3.0 nm grains and bulk single-crystal 3C-SiC, respectively. The behavior is attributed to the preferential amorphization at the interface.

scholarly journals High-pressure synthesis of REB5O8(OH)2 (RE = Ho, Er, Tm)

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Michael Zoller ◽  
Hubert Huppertz
Keyword(s):  
High Pressure ◽  
Rare Earth ◽  
Ir Spectroscopy ◽  
Earth Metal ◽  
Monoclinic Space Group ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structure Solution ◽  
Pressure Synthesis ◽  
The Rare Earth

AbstractThe rare earth oxoborates REB5O8(OH)2 (RE = Ho, Er, Tm) were synthesized in a Walker-type multianvil apparatus at a pressure of 2.5 GPa and a temperature of 673 K. Single-crystal X-ray diffraction data provided the basis for the structure solution and refinement. The compounds crystallize in the monoclinic space group C2 (no. 5) and are composed of a layer-like structure containing dreier and sechser rings of corner sharing [BO4]5− tetrahedra. The rare earth metal cations are coordinated between two adjacent sechser rings. Further characterization was performed utilizing IR spectroscopy.

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

scholarly journals Intermetallic REPtZn Compounds with TiNiSi-type Structure

2011 ◽  
Vol 66 (7) ◽  
pp. 671-676 ◽  
Author(s):  
Trinath Mishra ◽  
Rainer Pöttgen
Keyword(s):  
Rare Earth ◽  
Single Crystal ◽  
Coordination Number ◽  
High Frequency ◽  
Three Dimensional ◽  
Type Structure ◽  
Rare Earth Compounds ◽  
Crystal Data ◽  
X Ray Diffraction ◽  
X Ray

The equiatomic rare earth compounds REPtZn (RE = Y, Pr, Nd, Gd-Tm) were synthesized from the elements in sealed tantalum tubes by high-frequency melting at 1500 K followed by annealing at 1120 K and quenching. The samples were characterized by powder X-ray diffraction. The structures of four crystals were refined from single-crystal diffractometer data: TiNiSi type, Pnma, a = 707.1(1), b = 430.0(1), c = 812.4(1) pm, wR2 = 0.066, 602 F2, 21 variables for PrPt1.056Zn0.944; a = 695.2(1), b = 419.9(1), c = 804.8(1) pm, wR2 = 0.041, 522 F2, 21 variables for GdPt0.941Zn1.059; a = 688.2(1), b = 408.1(1), c = 812.5(1) pm, wR2 = 0.041, 497 F2, 22 variables for HoPt1.055Zn0.945; a = 686.9(1), b = 407.8(1), c = 810.4(1) pm, wR2 = 0.061, 779 F2, 20 variables for ErPtZn. The single-crystal data indicate small homogeneity ranges REPt1±xZn1±x. The platinum and zinc atoms build up three-dimensional [PtZn] networks (265 - 269 pm Pt-Zn in ErPtZn) in which the erbium atoms fill cages with coordination number 16 (6 Pt + 6 Zn + 4 Er). Bonding of the erbium atoms to the [PtZn] network proceeds via shorter RE-Pt distances, i. e. 288 - 293 pm in ErPtZn.

Single-crystal Data of Ternary Germanides RE2Nb3Ge4 (RE = Sc, Y, Gd–Er, Lu) and Sc2Ta3Ge4 with Ordered Sm5Ge4-type Structure

2013 ◽  
Vol 68 (5-6) ◽  
pp. 625-634 ◽  
Author(s):  
Bastian Reker ◽  
Samir F. Matar ◽  
Ute Ch. Rodewald ◽  
Rolf-Dieter Hoffmann ◽  
Rainer Pöttgen
Keyword(s):  
Rare Earth ◽  
Single Crystal ◽  
Coordination Number ◽  
Electronic Structure Calculations ◽  
Crystal Data ◽  
X Ray Diffraction ◽  
X Ray ◽  
Arc Melting ◽  
Structure Calculations ◽  
The Rare Earth

Small single crystals of the Sm5Ge4-type (space group Pnma) germanides RE2Nb3Ge4 (RE = Sc, Y, Gd-Er, Lu) and Sc2Ta3Ge4 were synthesized by arc-melting of the respective elements. The samples were characterized by powder and single-crystal X-ray diffraction. In all structures, except for Sc2.04Nb2.96Ge4 and Sc2.19Ta2.81Ge4, the rare earth and niobium atoms show full ordering on the three crystallographically independent samarium sites of the Sm5Ge4 type. Two sites with coordination number 6 are occupied by niobium, while the slightly larger site with coordination number 7 is filled with the rare earth element. Small homogeneity ranges with RE=Nb and RE=Ta mixing can be expected for all compounds. The ordered substitution of two rare earth sites by niobium or tantalum has drastic effects on the coordination number and chemical bonding. This was studied for the pair Y5Ge4/Y2Nb3Ge4. Electronic structure calculations show larger charge transfer from yttrium to germanium for Y5Ge4, contrary to Y2Nb3Ge4 which shows stronger covalent bonding due to the presence of Nb replacing Y at two sites

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