Growth of Si1-x.Snx Layers on Si by Ion-Beam-Induced Epitaxial Crystallization (Ibiec) and Solid Phase Epitaxial Growth (Speg)

1995 ◽  
Vol 396 ◽  
Author(s):  
N. Kobayashi ◽  
M. Hasegawa ◽  
N. Hayashi ◽  
H. Katsumata ◽  
Y. Makita ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Peak Concentration ◽  
Solid Phase ◽  
Ion Beam ◽  
Alloy Layer ◽  
Group Iv ◽  
Epitaxial Crystallization ◽  
Semiconductor Thin Films ◽  
Amorphous Si ◽  
Alloy Semiconductors

AbstractSynthesis of metastable group-IV binary alloy semiconductor thin films on Si was achieved by the crystalline growth of Si1-xSnx layers using Sn ion implantation into Si(100) followed either by ion-beam-induced epitaxial crystallization (IBIEC) or solid phase epitaxial growth (SPEG). Si(100) wafers were implanted at room temperature with 110keV 120Sn ions to a dose of 1×1016 cm-2 (x=0.029 at peak concentration) and 2x1016 cm-2 (x=0.058 at peak concentration). By this process about 90nm-thick amorphous Si1-xSnx and about 30nm-thick deeper amorphous Si layers were formed. IBIEC experiments performed with 400keV Ar ions at 300–400°C have induced an epitaxial crystallization of the amorphous alloy layers up to the surface and lattice site occupation of Sn atoms for samples with the lower Sn concentration (LC). XRD analyses have revealed a partial strain compensation for the crystallized layer. Samples with the higher Sn concentration (HC) have shown an epitaxial crystallization accompanied by defects around the peak Sn concentration. SPEG experiments up to 750°C for LC samples have shown an epitaxial crystallization of the fully strained alloy layer, whereas those for HC samples up to 750°C have revealed a collapse of the epitaxial growth around the interface of the alloy layer and the Si substrate. Photoluminescence (PL) emission from both IBIEC-grown and SPEG-grown samples with the lower Sn concentration has shown similar peaks to those by ion-implanted and annealed Si samples with intense I1 or I1-related (Ar) peaks. Present results suggest that IBIEC has a feature for the non-thermal equilibrium fabrication of Si-Sn alloy semiconductors.

scholarly journals Ion Beam Annealing of Si Co-Implanted with Ga and As

1989 ◽  
Vol 157 ◽  
Author(s):  
S. P. Withrow ◽  
O. W. Holland ◽  
S. J. Pennycook ◽  
J. Pankove ◽  
A. Mascarenhas
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Epitaxial Growth ◽  
Solid Phase ◽  
Ion Beam ◽  
Ion Pairing ◽  
Si Substrate ◽  
Transmission Electron ◽  
Amorphous Si

ABSTRACTIon beam annealing of amorphous Si(100) layers formed by co-implantation of overlapping Ga and As distributions is studied. Annealing was done using 750 keV Si+ ions with the Si substrate held at 300°C. The samples were characterized using 2.0 and 5.0 MeV He+ backscattering/channeling as well as by transmission electron microscopy (TEM). Crystallization of the amorphous Si layer occurs during irradiation via solid-phase-epitaxial growth without impurity precipitation or segregation. Both the Ga and As are mainly substitutional in the Si lattice, even at concentrations in excess of 7 at. % for each species. These results are attributed to compensation effects, most likely through ion pairing of the dopants.

High Concentrations of Erbium In Crystal Silicon by Thermal Or Ion-Beam-Induced Epitaxy of Erbium-Implanted Amorphous Silicon

1993 ◽  
Vol 301 ◽  
Author(s):  
J. S. Custer ◽  
A. Polman ◽  
E. Snoeks ◽  
G. N. van den Hoven
Keyword(s):  
Single Crystal ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Ion Beam ◽  
Solid Phase Epitaxy ◽  
Crystal Silicon ◽  
Epitaxial Crystallization ◽  
Amorphous Si ◽  
High Concentrations ◽  
Er Doped

ABSTRACTSolid phase epitaxy and ion-beam-induced epitaxial crystallization of Er-doped amorphous Si are used to incorporate high concentrations of Er in crystal Si. During solid phase epitaxy, substantial segregation and trapping of Er is observed, with maximum Er concentrations trapped in single crystal Si of up to 2 × 1020 /cm3. Ion-beam-induced regrowth results in very little segregation, with Er concentrations of more than 5 × 1020 /cm3 achievable. Photoluminescence from the incorporated Er is observed.

Synthesis of metastable group-IV alloy semiconductors by ion implantation and ion-beam-induced epitaxial crystallization

1996 ◽  
Vol 100-101 ◽  
pp. 498-502 ◽  
Author(s):  
N. Kobayashi ◽  
M. Hasegawa ◽  
N. Hayashi ◽  
H. Katsumata ◽  
Y. Makita ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Group Iv ◽  
Epitaxial Crystallization ◽  
Alloy Semiconductors

High Concentrations of Erbium in Crystal Silicon by Thermal or Ion-Beam-Induced Epitaxy of Erbium-Implanted Amorphous Silicon

1993 ◽  
Vol 298 ◽  
Author(s):  
J. S. Custer ◽  
A. Polman ◽  
E. Snoeks ◽  
G. N. van den Hoven
Keyword(s):  
Single Crystal ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Ion Beam ◽  
Solid Phase Epitaxy ◽  
Crystal Silicon ◽  
Epitaxial Crystallization ◽  
Amorphous Si ◽  
High Concentrations ◽  
Er Doped

AbstractSolid phase epitaxy and ion-beam-induced epitaxial crystallization of Er-doped amorphous Si are used to incorporate high concentrations of Er in crystal Si. During solid phase epitaxy, substantial segregation and trapping of Er is observed, with maximum Er concentrations trapped in single crystal Si of up to 2 x 1020 /cm3. Ion-beam-induced regrowth results in very little segregation, with Er concentrations of more than 5 X 1020 /cm3 achievable. Photoluminescence from the incorporated Er is observed.

Dynamics of Microstructure in the Early Stages of Ion Beam Assisted Film Growth

1991 ◽  
Vol 237 ◽  
Author(s):  
Harry A. Atwater ◽  
C. J. Tsai ◽  
S. Nikzad ◽  
M.V.R. Murty
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Recent Progress ◽  
Film Growth ◽  
Ion Beam ◽  
Surface Interactions ◽  
Low Energy ◽  
Early Stages ◽  
Semiconductor Thin Films ◽  
Nucleation Mechanisms

ABSTRACTRecent progress in low energy ion-surface interactions, and the early stages of ion-assisted epitaxy of semiconductor thin films is described. Advances in three areas are discussed: dynamics of displacements and defect incorporation, nucleation mechanisms, and the use of ion bombardment to modify epitaxial growth kinetics in atrulysurface-selective manner.

Epitaxial Growth of SixGe1−x Films on Si by Solid Phase Epitaxy.

1984 ◽  
Vol 37 ◽  
Author(s):  
C. S. Pai ◽  
S. S. Lau
Keyword(s):  
Phase Separation ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Ohmic Contacts ◽  
Solid Phase ◽  
Metal Layer ◽  
Alloyed Layer ◽  
Quaternary Compounds ◽  
Amorphous Si ◽  
Ion Backscattering

AbstractIt has been demonstrated in the literature that amorphous Si (or Ge) can be transported across a metal layer and grown epitaxially on Si(Ge) single crystal substrates in the solid phase. The objective of this study is to investigate if amorphous SixGe1−x mixtures can be transported uniformly across a medium and grown epitaxially on single crystal substrates without phase separation. The samples were prepared by e-beam evaporation of thin Pd films onto Si<100> substrates, followed by co-evaporation of SixGe1−x alloyed films (0<x<1) without breaking vacuum. The samples were anneaie in vacuum at 300°C to form a Pd silicide-germanide layer at the interface, then at 500°C for transport of the alloyed layer across the Pd silicide-germanide layer and subsequent epitaxial growth on Si substrate. The samples were investigated by x-ray diffraction and by MeV ion backscattering and channeling. The results show the alloyed film transports uniformly with no phase separation detected. The channeling result shows the grown alloyed layer is epitaxial with some Pd trapped in the layer. This simple technique is potentially useful for forming lattice-matched non-alloyed ohmic contacts on III–V ternary and quaternary compounds.

Enhancement of lateral solid phase epitaxial growth in evaporated amorphous Si films by phosphorus implantation

1985 ◽  
Vol 46 (3) ◽  
pp. 268-270 ◽  
Author(s):  
Hiroshi Yamamoto ◽  
Hiroshi Ishiwara ◽  
Seijiro Furukawa
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Amorphous Si ◽  
Si Films

Enhanced Lateral Solid Phase Epitaxial Growth in Phosphorus Doped Amorphous Si Films

1984 ◽  
Author(s):  
Hiroshi YAMAMOTO ◽  
Hiroshi ISHIWARA ◽  
Seijiro FURUKAWA
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Amorphous Si ◽  
Si Films ◽  
Phosphorus Doped
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