High Concentrations of Erbium In Crystal Silicon by Thermal Or Ion-Beam-Induced Epitaxy of Erbium-Implanted Amorphous Silicon

1993 ◽  
Vol 301 ◽  
Author(s):  
J. S. Custer ◽  
A. Polman ◽  
E. Snoeks ◽  
G. N. van den Hoven
Keyword(s):  
Single Crystal ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Ion Beam ◽  
Solid Phase Epitaxy ◽  
Crystal Silicon ◽  
Epitaxial Crystallization ◽  
Amorphous Si ◽  
High Concentrations ◽  
Er Doped

ABSTRACTSolid phase epitaxy and ion-beam-induced epitaxial crystallization of Er-doped amorphous Si are used to incorporate high concentrations of Er in crystal Si. During solid phase epitaxy, substantial segregation and trapping of Er is observed, with maximum Er concentrations trapped in single crystal Si of up to 2 × 1020 /cm3. Ion-beam-induced regrowth results in very little segregation, with Er concentrations of more than 5 × 1020 /cm3 achievable. Photoluminescence from the incorporated Er is observed.

High Concentrations of Erbium in Crystal Silicon by Thermal or Ion-Beam-Induced Epitaxy of Erbium-Implanted Amorphous Silicon

1993 ◽  
Vol 298 ◽  
Author(s):  
J. S. Custer ◽  
A. Polman ◽  
E. Snoeks ◽  
G. N. van den Hoven
Keyword(s):  
Single Crystal ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Ion Beam ◽  
Solid Phase Epitaxy ◽  
Crystal Silicon ◽  
Epitaxial Crystallization ◽  
Amorphous Si ◽  
High Concentrations ◽  
Er Doped

AbstractSolid phase epitaxy and ion-beam-induced epitaxial crystallization of Er-doped amorphous Si are used to incorporate high concentrations of Er in crystal Si. During solid phase epitaxy, substantial segregation and trapping of Er is observed, with maximum Er concentrations trapped in single crystal Si of up to 2 x 1020 /cm3. Ion-beam-induced regrowth results in very little segregation, with Er concentrations of more than 5 X 1020 /cm3 achievable. Photoluminescence from the incorporated Er is observed.

Epitaxial Crystallization of Amorphous Silicon Layers under Ion Irradiation: Orientation Dependence

1987 ◽  
Vol 93 ◽  
Author(s):  
D. M. Maher ◽  
R. G. Elliman ◽  
J. Linnros ◽  
J. S. Williams ◽  
R. V. Knoell ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Orientation Dependence ◽  
Epitaxial Crystallization ◽  
Beam Experiment ◽  
Interfacial Defects ◽  
Behavior Supports ◽  
Orientation Dependency

ABSTRACTIon-beam induced epitaxial crystallization of thin amorphous silicon layers at {100} and {110} crystalline/amorphous interfaces exhibits no orientation dependencies, whereas at a {111} crystalline/amorphous interface a weak orientation dependency relative to thermal-induced epitaxial crystallization is observed. This behavior supports an interpretation in which the thermal crystallization process is dominated by the need to form interfacial defects and/or growth sites and in the ion-beam experiment this formation process ocurrs athermally. It is thought that the observed orientation dependent regrowth on a {111} substrate relative to a {100} (or {110}) substrate is associated with the special correlated atomic sequencing which is believed to control solid-phase epitaxial crystallization at a {111) crystalline/amorphous interface.

Growth of Si1-x.Snx Layers on Si by Ion-Beam-Induced Epitaxial Crystallization (Ibiec) and Solid Phase Epitaxial Growth (Speg)

1995 ◽  
Vol 396 ◽  
Author(s):  
N. Kobayashi ◽  
M. Hasegawa ◽  
N. Hayashi ◽  
H. Katsumata ◽  
Y. Makita ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Peak Concentration ◽  
Solid Phase ◽  
Ion Beam ◽  
Alloy Layer ◽  
Group Iv ◽  
Epitaxial Crystallization ◽  
Semiconductor Thin Films ◽  
Amorphous Si ◽  
Alloy Semiconductors

AbstractSynthesis of metastable group-IV binary alloy semiconductor thin films on Si was achieved by the crystalline growth of Si1-xSnx layers using Sn ion implantation into Si(100) followed either by ion-beam-induced epitaxial crystallization (IBIEC) or solid phase epitaxial growth (SPEG). Si(100) wafers were implanted at room temperature with 110keV 120Sn ions to a dose of 1×1016 cm-2 (x=0.029 at peak concentration) and 2x1016 cm-2 (x=0.058 at peak concentration). By this process about 90nm-thick amorphous Si1-xSnx and about 30nm-thick deeper amorphous Si layers were formed. IBIEC experiments performed with 400keV Ar ions at 300–400°C have induced an epitaxial crystallization of the amorphous alloy layers up to the surface and lattice site occupation of Sn atoms for samples with the lower Sn concentration (LC). XRD analyses have revealed a partial strain compensation for the crystallized layer. Samples with the higher Sn concentration (HC) have shown an epitaxial crystallization accompanied by defects around the peak Sn concentration. SPEG experiments up to 750°C for LC samples have shown an epitaxial crystallization of the fully strained alloy layer, whereas those for HC samples up to 750°C have revealed a collapse of the epitaxial growth around the interface of the alloy layer and the Si substrate. Photoluminescence (PL) emission from both IBIEC-grown and SPEG-grown samples with the lower Sn concentration has shown similar peaks to those by ion-implanted and annealed Si samples with intense I1 or I1-related (Ar) peaks. Present results suggest that IBIEC has a feature for the non-thermal equilibrium fabrication of Si-Sn alloy semiconductors.

Thin Single Crystal Silicon on Oxide by Lateral Solid Phase Epitaxy of Amorphous Silicon and Silicon Germanium

2000 ◽  
Vol 609 ◽  
Author(s):  
Brian J. Greene ◽  
Joseph Valentino ◽  
Judy L. Hoyt ◽  
James F. Gibbons
Keyword(s):  
Single Crystal ◽  
Amorphous Silicon ◽  
Epitaxial Growth ◽  
Solid Phase ◽  
Single Crystal Silicon ◽  
Selective Etching ◽  
Lateral Growth ◽  
Crystal Silicon ◽  
Etch Stop ◽  
Etch Stop Layer

ABSTRACTThe fabrication of 250 Å thick, undoped, single crystal silicon on insulator by lateral solid phase epitaxial growth from amorphous silicon on oxide patterned (001) silicon substrates is reported. Amorphous silicon was grown by low pressure chemical vapor deposition at 525°C using disilane. Annealing at temperatures between 540 and 570°C is used to accomplish the lateral epitaxial growth. The process makes use of a Si/Si1-xGex/Si stacked structure and selective etching. The thin Si1-xGex etch stop layer (x=0.2) is deposited in the amorphous phase and crystallized simultaneously with the Si layers. The lateral growth distance of the epitaxial region was 2.5 μm from the substrate seed window. This represents a final lateral to vertical aspect ratio of 100:1 for the single crystal silicon over oxide regions after selective etching of the top sacrificial Si layer. The effects of Ge incorporation on the lateral epitaxial growth process are also discussed. The lateral epitaxial growth rate of 20% Ge alloys is enhanced by roughly a factor of three compared to the rate of Si films at an anneal temperature of 555°C. Increased random nucleation rates associated with Ge alloy films are shown to be an important consideration when employing Si1-xGex to enhance lateral growth or as an etch stop layer.

Interface Velocity and Noble Metal Segregation During Ion Beam Induced Epitaxial Crystallization

1989 ◽  
Vol 157 ◽  
Author(s):  
J. S. Custer ◽  
Michael O. Thompson ◽  
D. C. Jacobson ◽  
J. M. Poate
Keyword(s):  
Solid Phase ◽  
Ion Beam ◽  
Interface Velocity ◽  
Solid Phase Epitaxy ◽  
Segregation Coefficient ◽  
Time Resolved ◽  
Interfacial Segregation ◽  
Amorphous Si ◽  
Impurity Profiles

ABSTRACTThe interface velocity of Au and Ag doped amorphous Si during ion beam induced epitaxy was measured using in situ time resolved reflectivity. Interfacial segregation coefficients were determined as a function of composition from numerical simulations. At 320°C Au impurities enhanced the velocity by up to a factor of 2.5 compared to the intrinsic case. Silver slightly retarded re-growth by 10 %. These effects are qualitatively similar to the case of thermal solid phase epitaxy. Using the measured impurity profiles and interface velocity, computer simulations relate the segregation coefficient to the concentrations of the impurity at the interface. In both cases, the segregation coefficient increases with increasing interfacial impurity concentration.

Erbium in crystal silicon: Segregation and trapping during solid phase epitaxy of amorphous silicon

1994 ◽  
Vol 75 (6) ◽  
pp. 2809-2817 ◽  
Author(s):  
J. S. Custer ◽  
A. Polman ◽  
H. M. van Pinxteren
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Crystal Silicon

Material removal and surface evolution of single crystal silicon during ion beam polishing

2021 ◽  
pp. 148954
Author(s):  
Hang Xiao ◽  
Yifan Dai ◽  
Jian Duan ◽  
Ye Tian ◽  
Jia Li
Keyword(s):  
Single Crystal ◽  
Material Removal ◽  
Ion Beam ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Surface Evolution

scholarly journals The Influence of Wire Speed on Phase Transitions and Residual Stress in Single Crystal Silicon Wafers Sawn by Resin Bonded Diamond Wire Saw

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 429
Author(s):  
Tengyun Liu ◽  
Peiqi Ge ◽  
Wenbo Bi
Keyword(s):  
Residual Stress ◽  
Surface Layer ◽  
Phase Transitions ◽  
Single Crystal ◽  
Amorphous Silicon ◽  
Silicon Wafer ◽  
Single Crystal Silicon ◽  
Silicon Wafers ◽  
Crystal Silicon ◽  
Diamond Wire

Lower warp is required for the single crystal silicon wafers sawn by a fixed diamond wire saw with the thinness of a silicon wafer. The residual stress in the surface layer of the silicon wafer is the primary reason for warp, which is generated by the phase transitions, elastic-plastic deformation, and non-uniform distribution of thermal energy during wire sawing. In this paper, an experiment of multi-wire sawing single crystal silicon is carried out, and the Raman spectra technique is used to detect the phase transitions and residual stress in the surface layer of the silicon wafers. Three different wire speeds are used to study the effect of wire speed on phase transition and residual stress of the silicon wafers. The experimental results indicate that amorphous silicon is generated during resin bonded diamond wire sawing, of which the Raman peaks are at 178.9 cm−1 and 468.5 cm−1. The ratio of the amorphous silicon surface area and the surface area of a single crystal silicon, and the depth of amorphous silicon layer increases with the increasing of wire speed. This indicates that more amorphous silicon is generated. There is both compressive stress and tensile stress on the surface layer of the silicon wafer. The residual tensile stress is between 0 and 200 MPa, and the compressive stress is between 0 and 300 MPa for the experimental results of this paper. Moreover, the residual stress increases with the increase of wire speed, indicating more amorphous silicon generated as well.

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