Surface Nucleation and Template Growth of Ti Silicides

1995 ◽  
Vol 402 ◽  
Author(s):  
R. T. Tung
Keyword(s):  
Low Temperature ◽  
Phase Formation ◽  
Nucleation And Growth ◽  
Silicide Phase ◽  
Formation Temperature ◽  
Low Resistivity ◽  
Surface Nucleation ◽  
Amorphous Si ◽  
Very Low Temperature

AbstractThe direct nucleation and growth of Ti silicide on the surfaces of Si(100) and amorphous Si were studied. Silicide phase formation depended on the temperature and the stoichiometry of deposition and the crystallinity of the substrate. A very low temperature, − 500°C, for the nucleation of the low-resistivity C54-TiSi2 phase was observed on amorphous Si. Stoichiometric and uniform TiSi2 layers were grown with the depositions of pure Ti. On crystalline Si, uniform TiSi2 layers were also grown at ∼ 500°C with a co-deposited template layer. The much reduced C54 formation temperature is discussed in terms of a possible circumvention of precursor amorphous silicide phases during surface nucleation.

Silicide phase formation by Mg deposition on amorphous Si. Ab initio calculations, growth process and thermal stability

2019 ◽  
Vol 778 ◽  
pp. 514-521
Author(s):  
S.A. Dotsenko ◽  
Yu.V. Luniakov ◽  
A.S. Gouralnik ◽  
A.K. Gutakovskii ◽  
N.G. Galkin
Keyword(s):  
Thermal Stability ◽  
Ab Initio Calculations ◽  
Ab Initio ◽  
Phase Formation ◽  
Growth Process ◽  
Silicide Phase ◽  
Amorphous Si

Ammonothermal Preparation of Barium Zirconate Fine Powders

2008 ◽  
Vol 55-57 ◽  
pp. 85-88
Author(s):  
S. Wannapaiboon ◽  
A. Rujiwatra
Keyword(s):  
Low Temperature ◽  
Phase Formation ◽  
Particle Morphology ◽  
Cubic Phase ◽  
Barium Zirconate ◽  
Fine Powders ◽  
Primary Particles ◽  
Aggregation Formation ◽  
Very Low Temperature ◽  
Phase Formation Mechanism

Barium zirconate fine powders of pure cubic phase were readily prepared from the reactions between BaCl22H2O and ZrOCl28H2O under ammonothermal conditions at a very low temperature of 130oC as the lowest. KOH concentration was important in determining phase formation and particle morphology. Reaction temperature and time showed influences on the evolution of particle morphology and aggregation formation, respectively. Sizes of the primary particles critically depended on the BaII:ZrIV mole ratio. Phase formation mechanism is suggested.

Evidence against surface nucleation following pulsed melting of Si

1990 ◽  
Vol 5 (7) ◽  
pp. 1463-1467 ◽  
Author(s):  
P. S. Peercy ◽  
J. Y. Tsao ◽  
Michael O. Thompson
Keyword(s):  
Ion Implantation ◽  
Phase Formation ◽  
Ruby Laser ◽  
Laser Pulses ◽  
Time Dependent ◽  
Solidification Behavior ◽  
Rapid Melting ◽  
Surface Nucleation ◽  
Amorphous Si ◽  
Melting And Solidification

Time-dependent measurements of the melt and solidification behavior of amorphous Si, formed by ion implantation of In, have been obtained following irradiation with ∼3 ns ruby laser pulses. The recently observed buried In sheets formed under such conditions are shown to result from internal nucleation of melt, contrary to previous interpretations. Under no conditions was surface nucleation of either amorphous or crystalline Si observed from a surface melt. These results resolve previous inconsistencies in the understanding of phase formation during rapid melting and solidification of Si.

Role of boundaries in the crystallization of amorphous films

1988 ◽  
Vol 46 ◽  
pp. 626-627
Author(s):  
D. A. Smith
Keyword(s):  
Low Temperature ◽  
Amorphous State ◽  
Nucleation And Growth ◽  
Amorphous Films ◽  
Island Nucleation ◽  
Surface Steps ◽  
Transmission Electron ◽  
Component Systems ◽  
Temperature Deposition

The nucleation and growth processes which lead to the formation of a thin film are particularly amenable to investigation by transmission electron microscopy either in situ or subsequent to deposition. In situ studies have enabled the observation of island nucleation and growth, together with addition of atoms to surface steps. This paper is concerned with post-deposition crystallization of amorphous alloys. It will be argued that the processes occurring during low temperature deposition of one component systems are related but the evidence is mainly indirect. Amorphous films result when the deposition conditions such as low temperature or the presence of impurities (intentional or unintentional) preclude the atomic mobility necessary for crystallization. Representative examples of this behavior are CVD silicon grown below about 670°C, metalloids, such as antimony deposited at room temperature, binary alloys or compounds such as Cu-Ag or Cr O2, respectively. Elemental metals are not stable in the amorphous state.

RESISTIVITY OF TmSe UNDER PRESSURE AT VERY LOW TEMPERATURE

1980 ◽  
Vol 41 (C5) ◽  
pp. C5-177-C5-180
Author(s):  
J. Flouquet ◽  
P. Haen ◽  
F. Holtzberg ◽  
F. Lapierre ◽  
J. M. Mignot ◽  
...  
Keyword(s):  
Low Temperature ◽  
Very Low Temperature

Can fluorosyl hydride be formed or even prepared?

1990 ◽  
Vol 55 (4) ◽  
pp. 890-895
Author(s):  
Rudolf Zahradník ◽  
B. Andes Hess
Keyword(s):  
Low Temperature ◽  
Quantum Chemical Calculations ◽  
Quantum Chemical ◽  
Solid Matrix ◽  
Vibrational Characteristics ◽  
Very Low Temperature

HFO and HClO (fluorosyl and chlorosyl hydrides) and isomeric molecules HOF and HOCl (hypofluorous and hypochlorous acids) have been studied theoretically. On the basis of nonempiracal quantum chemical calculations (MP2, MP4 and CCD/6-311G**) geometry, energy and vibrational characteristics are analyzed and it is concluded that there is a poor chance to observe formation of HFO. Possibly, bombardment of HF in a solid matrix by 16O could lead at very low temperature to HFO.

Integrated low-temperature process for the fabrication of amorphous Si nanoparticles embedded in Al2 O3 for non-volatile memory application

2016 ◽  
Vol 213 (9) ◽  
pp. 2446-2451 ◽  
Author(s):  
Klemens Ilse ◽  
Thomas Schneider ◽  
Johannes Ziegler ◽  
Alexander Sprafke ◽  
Ralf B. Wehrspohn
Keyword(s):  
Low Temperature ◽  
Si Nanoparticles ◽  
Non Volatile Memory ◽  
Amorphous Si ◽  
Volatile Memory ◽  
Low Temperature Process

scholarly journals Silver‐Promoted High‐Performance (Ag,Cu)(In,Ga)Se 2 Thin‐Film Solar Cells Grown at Very Low Temperature

Solar RRL ◽  
2021 ◽  
pp. 2100108
Author(s):  
Shih-Chi Yang ◽  
Jordi Sastre ◽  
Maximilian Krause ◽  
Xiaoxiao Sun ◽  
Ramis Hertwig ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Low Temperature ◽  
High Performance ◽  
Thin Film Solar Cells ◽  
Very Low Temperature

Low‐temperature phase formation in the SrF 2 ‐ LaF 3 system

2020 ◽  
Author(s):  
Pavel P. Fedorov ◽  
Alexander A. Alexandrov ◽  
Valery V. Voronov ◽  
Maria N. Mayakova ◽  
Alexander E. Baranchikov ◽  
...  
Keyword(s):  
Low Temperature ◽  
Phase Formation ◽  
Temperature Phase ◽  
Low Temperature Phase

Enhanced crystallization and phase transformation of amorphous silicon nitride under high pressure

2001 ◽  
Vol 16 (1) ◽  
pp. 67-75 ◽  
Author(s):  
Ya-Li Li ◽  
Yong Liang ◽  
Fen Zheng ◽  
Xian-Feng Ma ◽  
Suo-Jing Cui ◽  
...  
Keyword(s):  
High Pressure ◽  
Phase Transformation ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Crystallization Temperature ◽  
Amorphous Materials ◽  
Normal Pressure ◽  
Nucleation And Growth ◽  
Amorphous Silicon Nitride ◽  
Amorphous Si

The crystallization and phase transformation of amorphous Si3N4 ceramics under high pressure (1.0–5.0 GPa) between 800 and 1700 °C were investigated. A greatly enhanced crystallization and α–β transformation of the amorphous Si3N4 ceramics were evident under the high pressure, as characterized by that, at 5.0 GPa, the amorphous Si3N4 began to crystallize at a temperature as low as 1000 °C (to transform to a modification). The subsequent a–b transformation occurred completed between 1350 and 1420 °C after only 20 min of pressing at 5.0 GPa. In contrast, under 0.1 MPa N2, the identical amorphous materials were stable up to 1400 °C without detectable crystallization, and only a small amount of a phase was detected at 1500 °C. The crystallization temperature and the a–b transformation temperatures are reduced by 200–350 °C compared to that at normal pressure. The enhanced phase transformations of the amorphous Si3N4 were discussed on the basis of thermodynamic and kinetic consideration of the effects of pressure on nucleation and growth.

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