scholarly journals Significance of Microstructure for a MOCVD-Grown YSZ Thin Film Gas Sensor

1995 ◽  
Vol 403 ◽  
Author(s):  
J. Vetrone ◽  
C. Foster ◽  
G. Bai

AbstractWe report the fabrication and characterization of a low temperature (200°C-400°C) thin film gas sensor constructed from a MOCVD-grown yttria-stabilized zirconia (YSZ) layer sandwiched between two platinum thin film electrodes. A reproducible gas-sensing response is produced by applying a cyclic voltage which generates voltammograms with gas-specific current peaks and shapes. Growth conditions are optimized for preparing YSZ films having dense microstructures, low leakage currents, and maximum ion conductivities. In particular, the effect of growth temperature on film morphology and texture is discussed and related to the electrical and gas-sensing properties of the thin film sensor device.

1999 ◽  
Vol 146 (9) ◽  
pp. 3536-3537 ◽  
Author(s):  
P. H. Wei ◽  
G. B. Li ◽  
S. Y. Zhao ◽  
L. R. Chen

2015 ◽  
Vol 584 ◽  
pp. 294-299 ◽  
Author(s):  
Wen Zeng ◽  
Bin Miao ◽  
Tengfei Li ◽  
He Zhang ◽  
Shahid Hussain ◽  
...  

2007 ◽  
Vol 124-126 ◽  
pp. 223-226 ◽  
Author(s):  
Md. Mosharaf Hossain Bhuiyan ◽  
Tsuyoshi Ueda ◽  
Tomoaki Ikegami

SnO2 thin films have been grown on Si3N4 substrates and also on Al2O3 sensor substrates with Pt interdigitated electrodes by the pulsed excimer laser deposition (PLD). Palladium doped SnO2 thin film was also prepared by the PLD method combined with the DC sputtering process. The substrate temperature and the oxygen gas pressure were changed from 300 to 500°C and from 100 to 300 mTorr, respectively during deposition. The morphology and structural properties of the prepared thin films have been studied by AFM and XRD. The gas sensing properties of the SnO2 sensor to NO gas was evaluated by measuring electrical resistance between interdigitated electrodes. The highest sensitivity of the undoped SnO2 and Pd doped sensor was found to be around 9.5 and 42, respectively.


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