Laser Interference Structuring of a-Si:H

1996 ◽  
Vol 420 ◽  
Author(s):  
C. E. Nebel
Keyword(s):  
Solar Cell ◽  
Electric Fields ◽  
Light Trapping ◽  
Window Layer ◽  
Laser Beams ◽  
Laser Interference ◽  
Hybrid Thin Film ◽  
Boron Doped ◽  
Cell Architecture ◽  
Set Up

AbstractLaser interference structuring with a pulsed Nd:YAG laser set-up is introduced and typical geometric dimensions and limitations are discussed. Intensity modulated laser beams are used to recrystallize amorphous silicon layers periodically at the intensity maxima. Stripe or tip structures of multi-crystalline (mc) silicon with sub-micrometer dimensions are shown. Structural, electronic and optical properties of the mc-Si structures are discussed. A hybrid thin film p-i-n solar cell architecture is described where the textured TCO is replaced by a flat TCO and a laterally structured boron doped mc-Si window layer. Light trapping, light diffraction and higher internal electric fields are proposed to be the main advantages of such a solar cell.

BORON DOPED nc-Si:H WINDOW LAYER PREPARED BY HW-CVD FOR SOLAR CELL APPLICATIONS

2012 ◽  
Vol 06 ◽  
pp. 521-526
Author(s):  
M. R PRAMOD ◽  
M. M. KAMBLE ◽  
V. S. WAMAN ◽  
S. P. GORE ◽  
A. M. FUNDE ◽  
...  
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
Hydrogen Content ◽  
Material Properties ◽  
Volume Fraction ◽  
Dark Conductivity ◽  
Window Layer ◽  
High Deposition Rate ◽  
X Ray ◽  
Boron Doped

In this work, we report on synthesis of boron doped hydrogenated nanocrystalline silicon ( p - nc - Si : H ) films by HW-CVD method. Films were prepared at low substrate temperature (165 °C) and low process pressure (20 mTorr) by varying diborane gas phase ratio [defined as R B 2 H 6 = ( F B 2 H 6/ F SiH 4)×100%]. The material properties of these films are studied using micro-Raman spectroscopy, low angle X-ray diffraction, X-ray photoelectron spectroscopy (XPS), UV-visible spectroscopy, dark conductivity measurements etc. The correlation between R B 2 H 6 and resulting material properties such as crystalline volume fraction, crystallite size, band gap and hydrogen content has been established. We have obtained high band gap (~ 2.48 eV) p - nc - Si : H films having dark conductivity (~ 0.6 S/cm) with low hydrogen content (~ 1.8 at. %) at high deposition rate (~19.2 Å/s). The employment of these films in a - Si : H based p - i - n solar cell as a p -type window layer could have low absorption losses thereby enhancing the current density which in turn would enhance the conversion efficiency of solar cell.

Nanophotonic perovskite solar cell architecture with a three-dimensional TiO2 nanodendrite scaffold for light trapping and electron collection

2016 ◽  
Vol 4 (3) ◽  
pp. 1119-1125 ◽  
Author(s):  
Sih-Han Lin ◽  
Yen-Hsun Su ◽  
Hsun-Wei Cho ◽  
Po-Yen Kung ◽  
Wen-Pin Liao ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Light Trapping ◽  
Perovskite Solar Cells ◽  
Three Dimensional ◽  
Perovskite Solar Cell ◽  
Electron Collection ◽  
Cell Architecture

Nanophotonic perovskite solar cells with a three-dimensional TiO2 nanodendrite scaffold have been fabricated for excellent light trapping and electron collection.

Design, Actual Performance, and Electrical Stability of CISCuT-Based Quasi-Endless Solar Cell Tapes

2001 ◽  
Vol 668 ◽  
Author(s):  
Michael Winkler ◽  
Jürgen Penndorf ◽  
Joachim Griesche ◽  
Igor Konovalov ◽  
Olaf Tober
Keyword(s):  
Solar Cell ◽  
S Phase ◽  
Window Layer ◽  
Base Line ◽  
Electrical Characteristics ◽  
Electrical Stability ◽  
Actual Performance ◽  
Roll To Roll ◽  
Set Up ◽  
Made In

ABSTRACTSolar cells based on Cu-In-S-phase absorber layers on a quasi-endless copper tape were made in a series of consecutive roll-to-roll processes, for which a base line has recently been set up. The so called “as grown cell absorber”, which consists of a stack of CuIn5S8 and CuInS2 layers, is completed to a solar cell by a CuI buffer layer of about 70 nm thickness and a 1 μm thick ZnO-TCO window layer. The design of the whole cell including the phase constitution of the absorber layer and the actual standard electrical characteristics will be presented. Considering the first stability tests and the experimental possibilities of the base line, an outlook will be given concerning the ability and perspectives of using these cell tapes for module production.

scholarly journals Investigation of the Carrier Movement through the Tunneling Junction in the InGaP/GaAs Dual Junction Solar Cell Using the Electrically and Optically Biased Photoreflectance Spectroscopy

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 638
Author(s):  
Sanam SaeidNahaei ◽  
Hyun-Jun Jo ◽  
Sang Jo Lee ◽  
Jong Su Kim ◽  
Sang Jun Lee ◽  
...  
Keyword(s):  
Solar Cell ◽  
Electric Field ◽  
Electric Fields ◽  
Bias Voltage ◽  
Tunnel Junction ◽  
Photogenerated Carrier ◽  
Internal Electric Field ◽  
Junction Solar Cell ◽  
Photoreflectance Spectroscopy ◽  
Dc Bias

For examining the carrier movements through tunnel junction, electrically and optically-biased photoreflectance spectroscopy (EBPR and OBPR) were used to investigate the internal electric field in the InGaP/GaAs dual junction solar cell at room temperature. At InGaP and GaAs, the strength of p-n junction electric fields (Fpn) was perturbed by the external DC bias voltage and CW light intensity for EBPR and OBPR experiments, respectively. Moreover, the Fpn was evaluated using the Fast Fourier Transform (FFT) of the Franz—Keldysh oscillation from PR spectra. In the EBPR, the electric field decreased by increasing the DC bias voltage, which also decreased the potential barrier. In OBPR, when incident CW light is absorbed by the top cell, the decrement of the Fpn in the GaAs cell indicates that the photogenerated carriers are accumulated near the p-n junction. Photogenerated carriers in InGaP can pass through the tunnel junction, and the PR results show the contribution of the modification of the electric field by the photogenerated carriers in each cell. We suggest that PR spectroscopy with optical-bias and electrical-bias could be analyzed using the information of the photogenerated carrier passed through the tunnel junction.

Modifications in Morphology Resulting from Nanoimprinting Bulk Heterojunction Blends for Light Trapping Organic Solar Cell Designs

2013 ◽  
Vol 5 (16) ◽  
pp. 8225-8230 ◽  
Author(s):  
John R. Tumbleston ◽  
Abay Gadisa ◽  
Yingchi Liu ◽  
Brian A. Collins ◽  
Edward T. Samulski ◽  
...  
Keyword(s):  
Solar Cell ◽  
Organic Solar Cell ◽  
Bulk Heterojunction ◽  
Light Trapping

scholarly journals Preparation and characterization of pulsed laser deposited a novel CdS/CdSe composite window layer for CdTe thin film solar cell

2016 ◽  
Vol 367 ◽  
pp. 480-484 ◽  
Author(s):  
Xiaoyan Yang ◽  
Bo Liu ◽  
Bing Li ◽  
Jingquan Zhang ◽  
Wei Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
Pulsed Laser ◽  
Window Layer ◽  
Cdte Thin Film
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