Long-Wavelength Vertical-Cavity Surface-Emitting Laser Diodes
Keyword(s):
AbstractLong-wavelength (1300/1550 nm) vertical-cavity surface-emitting lasers (VCSELs) have been much more difficult to realize than VCSELs at shorter wavelengths such as 850/980 nm. The primary reason for this has been the low refractive index difference and reflectivity associated with lattice-matched InP/InGaAsP mirrors. A solution to this problem is to “wafer-fuse” high-reflectivity GaAs/AlGaAs mirrors to InP/InGaAsP active regions. This process has led to the first room-temperature continuous-wave (CW) 1.54 μm VCSELs. In this paper, we discuss two device geometries which employ wafer-fused mirrors, both of which lead to CW operation. We also discuss fabrication of WDM arrays using long-wavelength VCSELs.
2005 ◽
Vol 11
(5)
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pp. 990-998
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Keyword(s):
Keyword(s):
1992 ◽
Vol 03
(03n04)
◽
pp. 263-277
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