Development of Si(100) Surface Roughness at the Initial Stage of Etching in F2 and XeF2 Gases - Ellipsometric Study

1996 ◽  
Vol 440 ◽  
Author(s):  
V.S. Aliev ◽  
V.N. Kruchinin
Keyword(s):  
Surface Roughness ◽  
Adsorption Layer ◽  
Molecular Flow ◽  
Layer Formation ◽  
Kinetics Of Adsorption ◽  
Initial Stage ◽  
Ellipsometric Study ◽  
Kinetics Of

AbstractThe development of the roughness of the Si (100) surface has been investigated at the initial stage of etching in the molecular flow of F2 and XeF2 gases. It was discovered that roughness grew during etching in XeF2 gas and decreased during etching in F2 gas, that is, F2 gas polishes Si surface unlike XeF2. This difference was explained with the help of ellipsometric study of the kinetics of adsorption layer formation.

Kinetics of Adsorption Layer Formation in Solutions of Polyacid/Surfactant Complexes

2009 ◽  
Vol 113 (14) ◽  
pp. 5664-5671 ◽  
Author(s):  
Alexey G. Bykov ◽  
Shi-Yow Lin ◽  
Giuseppe Loglio ◽  
Reinhard Miller ◽  
Boris A. Noskov
Keyword(s):  
Adsorption Layer ◽  
Layer Formation ◽  
Kinetics Of Adsorption ◽  
Kinetics Of

Initial degree of detaching bubble adsorption coverage and the kinetics of dynamic adsorption layer formation

2018 ◽  
Vol 20 (4) ◽  
pp. 2403-2412 ◽  
Author(s):  
Dominik Kosior ◽  
Jan Zawala
Keyword(s):  
Adsorption Layer ◽  
Dynamic Adsorption ◽  
Layer Formation ◽  
Initial Degree ◽  
Initial Adsorption ◽  
First Time ◽  
Kinetics Of

We show, for the first time, the influence of the initial adsorption coverage over a bubble on the kinetics of dynamic adsorption layer formation.

Kinetics of compact layer formation and growth of 1,10-phenanthroline at the electrode surface

1990 ◽  
Vol 87 ◽  
pp. 1597-1607 ◽  
Author(s):  
L Benedetti ◽  
M Borsari ◽  
C Fontanesi ◽  
G Battistuzzi Gavioli
Keyword(s):  
Electrode Surface ◽  
Layer Formation ◽  
Compact Layer ◽  
Kinetics Of

THE INFLUENCE OF SURFACE ROUGHNESS ON SCATTERING OF FREE-MOLECULAR FLOW BY SOLID BODIES

2016 ◽  
Vol 47 (4) ◽  
pp. 367-388 ◽  
Author(s):  
Alexander Ivanovich Erofeev ◽  
Alexander Petrovich Nikiforov ◽  
Sergei Borisovich Nesterov ◽  
Ramul'ya Amirovna Nezhmetdinova
Keyword(s):  
Surface Roughness ◽  
Molecular Flow ◽  
Free Molecular Flow ◽  
Solid Bodies

Growth Kinetics of Molecular Beam Epitaxy on Non-Singular Surfaces

1992 ◽  
Vol 280 ◽  
Author(s):  
J. F. Egler ◽  
N. Otsuka ◽  
K. Mahalingam
Keyword(s):  
Surface Roughness ◽  
Monte Carlo ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Singular Surface ◽  
Sticking Coefficient ◽  
Singular Surfaces ◽  
Vicinal Surfaces ◽  
Kinetics Of ◽  
Multiple Configurations

ABSTRACTGrowth kinetics on non-singular surfaces were studied by Monte Carlo simulations. In contrast to the growth on singular and vicinal surfaces, the sticking coefficient on the non-singular surfaces was found to decrease with increase of the surface roughness. Simulations of annealing processes showed that surface diffusion of atoms leads to a stationary surface roughness, which is explained by multiple configurations having the lowest energy in the non-singular surface.

Sign in / Sign up

Export Citation Format

Share Document