Electron Time-of-Flight Measurements in Porous Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
Prasanna Rao ◽  
E. A. Schiff ◽  
L. Tsybeskov ◽  
P. M. Fauchet
Keyword(s):  
Electron Transport ◽  
Porous Silicon ◽  
Temperature Dependence ◽  
Fractal Structure ◽  
Electron Drift ◽  
Silicon Diode ◽  
Transient Photocurrent ◽  
Multiple Trapping ◽  
Temperature Electron ◽  
Flight Measurements

AbstractTransient photocurrent measurements are reported in an electroluminescent porous silicon diode. Electron drift mobilities are obtained from the data as a function of temperature. Electron transport is dispersive, with a typical dispersion parameter α≈ 0.5. The range of mobilities is 10−5 − 10−4 cm2Vs between 225 K amd 400 K. This temperature-dependence is much less than expected for multiple-trapping models for dispersion, and suggests that a fractal structure causes the dispersion and the small mobilities.

Quasiballistic Electron Emission from Planarized Nanocrystalline-Si Cold Cathode

2004 ◽  
Vol 832 ◽  
Author(s):  
Yoshishige Tsuchiya ◽  
Takuya Nakatsukasa ◽  
Hiroshi Mizuta ◽  
Shunri Oda ◽  
Akira Kojima ◽  
...  
Keyword(s):  
Electron Transport ◽  
Porous Silicon ◽  
Energy Distribution ◽  
Electron Emission ◽  
High Efficiency ◽  
Cathode Surface ◽  
Cold Cathode ◽  
Silicon Diode ◽  
Nanocrystalline Si

ABSTRACTMechanism of electron transport through planerized nanocrystalline-Si (nc-Si) cold cathode surface emitting devices was investigated. The energy distribution of electrons emitted from nc-Si emitter was obviously not Maxwellian, which was usually obtained at conventional cold cathode devices, but was similar to that from the nanocrystalline porous silicon diode emitter. These results strongly suggest that electrons are emitted quasiballistically from our devices and indicate that the planarized nc-Si layer play an important role in this high efficiency cold cathode emitter.

High Field Electron Drift in a-Si:H

1993 ◽  
Vol 297 ◽  
Author(s):  
Qing Gu ◽  
Eric A. Schiff ◽  
Jean Baptiste Chevrier ◽  
Bernard Equer
Keyword(s):  
Electric Fields ◽  
High Field ◽  
Drift Mobility ◽  
Time Range ◽  
Electron Drift ◽  
Parameter Change ◽  
Transient Photocurrent ◽  
Field Mobility ◽  
High Electric Fields ◽  
Electron Drift Mobility

We have measured the electron drift mobility in a-Si:H at high electric fields (E ≤ 3.6 x 105 V%cm). The a-Si:Hpin structure was prepared at Palaiseau, and incorporated a thickp+ layer to retard high field breakdown. The drift mobility was obtained from transient photocurrent measurements from 1 ns - 1 ms following a laser pulse. Mobility increases as large as a factor of 30 were observed; at 77 K the high field mobility de¬pended exponentially upon field (exp(E/Eu), where E u= 1.1 x 105 V%cm). The same field dependence was observed in the time range 10 ns – 1 μs, indicating that the dispersion parameter change with field was negligible. This latter result appears to exclude hopping in the exponential conduction bandtail as the fundamental transport mechanism in a-Si:H above 77 K; alternate models are briefly discussed.

Temperature dependence of the transient and AC electrical conductivity of porous silicon thin films

2003 ◽  
Vol 101 (1-3) ◽  
pp. 334-337 ◽  
Author(s):  
M. Theodoropoulou ◽  
C.A. Krontiras ◽  
N. Xanthopoulos ◽  
S.N. Georga ◽  
M.N. Pisanias ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Porous Silicon ◽  
Temperature Dependence ◽  
Ac Electrical Conductivity ◽  
Silicon Thin Films

Electrical conduction in porous silicon: temperature dependence

2000 ◽  
Vol 31 (3) ◽  
pp. 187-191 ◽  
Author(s):  
Mikrajuddin ◽  
F.G Shi ◽  
K Okuyama
Keyword(s):  
Porous Silicon ◽  
Temperature Dependence ◽  
Electrical Conduction

Light emitting porous silicon diode based on a silicon/porous silicon heterojunction

1999 ◽  
Vol 86 (11) ◽  
pp. 6474-6482 ◽  
Author(s):  
L. Pavesi ◽  
R. Chierchia ◽  
P. Bellutti ◽  
A. Lui ◽  
F. Fuso ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Light Emitting ◽  
Silicon Diode

The effect of UV irradiation on temperature dependence of photoluminescence and photoacoustic response in porous silicon

2001 ◽  
Vol 46 (1) ◽  
pp. 63-67 ◽  
Author(s):  
S. N. Bashchenko ◽  
I. V. Blonskii ◽  
M. S. Brodyn ◽  
V. N. Kadan ◽  
Yu. G. Skryshevskii
Keyword(s):  
Porous Silicon ◽  
Temperature Dependence ◽  
Uv Irradiation
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