Quasiballistic Electron Emission from Planarized Nanocrystalline-Si Cold Cathode

ABSTRACTMechanism of electron transport through planerized nanocrystalline-Si (nc-Si) cold cathode surface emitting devices was investigated. The energy distribution of electrons emitted from nc-Si emitter was obviously not Maxwellian, which was usually obtained at conventional cold cathode devices, but was similar to that from the nanocrystalline porous silicon diode emitter. These results strongly suggest that electrons are emitted quasiballistically from our devices and indicate that the planarized nc-Si layer play an important role in this high efficiency cold cathode emitter.

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Analyses of Ballistic Electron Transport in Nanocrystalline Porous Silicon

MRS Proceedings ◽

10.1557/proc-638-f3.3.1 ◽

2000 ◽

Vol 638 ◽

Cited By ~ 1

Author(s):

Akira Kojima ◽

Xia Sheng ◽

Nobuyoshi Koshida

Keyword(s):

Electron Transport ◽

Porous Silicon ◽

Energy Distribution ◽

Electron Emission ◽

Ballistic Transport ◽

Peak Position ◽

Ballistic Electron ◽

Ballistic Electron Transport ◽

Technological Potential ◽

Nanocrystalline Layer

AbstractThe characteristics of ballistic electron transport in porous silicon (PS) are investigated in terms of the electron emission from PS diodes and the energy distribution of emitted electrons. The energy distributions show a behavior of ballistic electron emission that is quite different with the Maxwellian distribution. This is clearly observed at low temperatures below 150 K where the electrical conduction in PS is dominated by the tunneling mode. At 100 K, the peak position of distribution curve becomes more close to the energy corresponding to the energy gain expected from ballistic transport without any scattering losses. The simulated energy distribution suggests that the electrons having higher energies in a non-equilibrium state travel ballistically in PS via field-induced tunneling process. These results support that electrons can travel ballistically in nanocrystalline layer under a high electric field. The observed ballistic transport indicates the further technological potential of silicon nanocrystallites.

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Electron Time-of-Flight Measurements in Porous Silicon

MRS Proceedings ◽

10.1557/proc-452-613 ◽

1996 ◽

Vol 452 ◽

Cited By ~ 7

Author(s):

Prasanna Rao ◽

E. A. Schiff ◽

L. Tsybeskov ◽

P. M. Fauchet

Keyword(s):

Electron Transport ◽

Porous Silicon ◽

Temperature Dependence ◽

Fractal Structure ◽

Electron Drift ◽

Silicon Diode ◽

Transient Photocurrent ◽

Multiple Trapping ◽

Temperature Electron ◽

Flight Measurements

AbstractTransient photocurrent measurements are reported in an electroluminescent porous silicon diode. Electron drift mobilities are obtained from the data as a function of temperature. Electron transport is dispersive, with a typical dispersion parameter α≈ 0.5. The range of mobilities is 10−5 − 10−4 cm2Vs between 225 K amd 400 K. This temperature-dependence is much less than expected for multiple-trapping models for dispersion, and suggests that a fractal structure causes the dispersion and the small mobilities.

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