Multiple trapping on a comb structure as a model of electron transport in disordered nanostructured semiconductors

2015 ◽  
Vol 120 (5) ◽  
pp. 860-870 ◽  
Author(s):  
R. T. Sibatov ◽  
E. V. Morozova
1996 ◽  
Vol 452 ◽  
Author(s):  
Prasanna Rao ◽  
E. A. Schiff ◽  
L. Tsybeskov ◽  
P. M. Fauchet

AbstractTransient photocurrent measurements are reported in an electroluminescent porous silicon diode. Electron drift mobilities are obtained from the data as a function of temperature. Electron transport is dispersive, with a typical dispersion parameter α≈ 0.5. The range of mobilities is 10−5 − 10−4 cm2Vs between 225 K amd 400 K. This temperature-dependence is much less than expected for multiple-trapping models for dispersion, and suggests that a fractal structure causes the dispersion and the small mobilities.


2011 ◽  
Vol 116 (1) ◽  
pp. 1165-1173 ◽  
Author(s):  
Christian Strothkämper ◽  
Klaus Schwarzburg ◽  
Robert Schütz ◽  
Rainer Eichberger ◽  
Andreas Bartelt

Nanoscale ◽  
2020 ◽  
Vol 12 (45) ◽  
pp. 23028-23035
Author(s):  
Artem R. Khabibullin ◽  
Alexander L. Efros ◽  
Steven C. Erwin

Theoretical modeling of wavefunction overlap in nanocrystal solids elucidates the important role played by ligands in electron transport.


1994 ◽  
Vol 6 (1) ◽  
pp. 1-4
Author(s):  
Kazutaka KAWAMURA ◽  
Eiji YABE ◽  
Keiji TAKAHASHI ◽  
Kazuo TAKAYAMA

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