SI3N4 Particle Removal Efficiency Study

1997 ◽  
Vol 477 ◽  
Author(s):  
Jane Qian Liu ◽  
Carolyn Lee ◽  
Joseph M. Rosamilia ◽  
Tom Boone ◽  
Veronica Czitrom ◽  
...  
Keyword(s):  
Removal Efficiency ◽  
Defect Density ◽  
Bath Temperature ◽  
Solution Chemistry ◽  
Particle Removal ◽  
Megasonic Cleaning ◽  
Wafer Cleaning ◽  
Particle Contamination ◽  
The Impact ◽  
Improve Device

ABSTRACTControlling particle contamination in wafer cleaning is important to reduce defect density and improve device performance and yield. In this study, a screening experiment was employed to evaluate particle removal efficiency among different cleanings, including FSI BCLN, bench rinse and dry only, bench SC1/megasonic only, bench RCA cleaning, and bench RCA-based cleaning. To optimize particle removal efficiency in RCA-based cleaning, a design of experiment (DOE) has been done to investigate the impact of SC1/megasonic cleaning on Si3N4 particle removal efficiency. Bath temperature, megasonic power, and solution chemistry of SCI bath were evaluated. The removal efficiency in relations to particle sizes was also investigated

Practical considerations in Megasonic Wafer Cleaning

1997 ◽  
Vol 477 ◽  
Author(s):  
R. Mark Hall ◽  
Taura Jarvis ◽  
Thad Parry
Keyword(s):  
Experimental Data ◽  
Surface Roughness ◽  
Bath Temperature ◽  
Process Time ◽  
Particle Removal ◽  
Megasonic Cleaning ◽  
Wafer Cleaning ◽  
Transducer Design ◽  
Gap Spacing ◽  
The Impact

ABSTRACTIn this study, critical hardware and process parameters are evaluated for their effect on performance in megasonic cleaning applications. Experimental data is presented which shows the impact of transducer design, bath temperature, process time, SC1 chemistry, and wafer gap spacing on particle removal and surface roughness. The ability to remove particles smaller than 0.1 um in size is also demonstrated.

High Efficiency Single Wafer Cleaning for Wafer Bonding-Based 3D Integration Applications

2012 ◽  
Vol 187 ◽  
pp. 269-272 ◽  
Author(s):  
Don Dussault ◽  
F. Fournel ◽  
V. Dragoi
Keyword(s):  
Removal Efficiency ◽  
Wafer Bonding ◽  
High Efficiency ◽  
Current Work ◽  
Particle Removal ◽  
3D Integration ◽  
Production Scale ◽  
Megasonic Cleaning ◽  
Wafer Cleaning ◽  
Transducer Design

Current work describes development, testing and verification of a single wafer megasonic cleaning method utilizing a transducer design that meets the extreme particle neutrality, Particle Removal Efficiency (PRE), and repeatability requirements of production scale wafer bonding and other applications requiring extremely low particle levels.

Particle Removal Efficiency and Damage Analysis on Silicon Wafers after Megasonic Cleaning in Solvents

2009 ◽  
Vol 23 (12) ◽  
pp. 1709-1721 ◽  
Author(s):  
Francesca Barbagini ◽  
Sandip Halder ◽  
Tom Janssens ◽  
Karine Kenis ◽  
Kurt Wostyn ◽  
...  
Keyword(s):  
Removal Efficiency ◽  
Silicon Wafers ◽  
Damage Analysis ◽  
Particle Removal ◽  
Megasonic Cleaning

Impact of Re-Gasified Water on Megasonic Cleaning

2007 ◽  
Vol 134 ◽  
pp. 217-220 ◽  
Author(s):  
Boon Cheng Goh ◽  
Felicia Goh ◽  
Christopher Lim ◽  
Zainab Ismail ◽  
Mei Sheng Zhou
Keyword(s):  
Removal Efficiency ◽  
Particle Removal ◽  
Megasonic Cleaning ◽  
Cavitation Activity

Megasonic cleaning using de-gassed water (less than 2ppm N2, O2, CO2) in a 300mm batch immersion tool often does not give optimal particle performance, with particle streaks and clusters added onto the wafer, and low particle removal efficiency (PRE). When water was re-gasified with N2, the resultant stable cavitation activity reduced particle adders and increased PRE. With N2 concentration increased to just above 5ppm, number of particle adders decreased by three folds. Optimal particle performance could be obtained by operating at an N2 level close to saturation.

Studies of the Relationship between Megasonics, Surface Etching, and Particle Removal in SC-1 Solutions

1995 ◽  
Vol 386 ◽  
Author(s):  
S. L. Cohen ◽  
D. Rath ◽  
G. Lee ◽  
B. Furman ◽  
K. R. Pope ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Acoustic Streaming ◽  
Particle Surface ◽  
Native Oxide ◽  
Particle Removal ◽  
Megasonic Cleaning ◽  
Thermally Activated ◽  
Surface Etching ◽  
Wafer Cleaning ◽  
Oxide Substrates

ABSTRACTWafer cleaning studies have been performed so as to understand the influence of acoustic (megasonic) energy on particle removal in dilute SC-1 solutions. Surface etching alone (up to 60Å) has been found to be insufficient to completely remove silicon nitride surface particles from native oxide surfaces in the absence of megasonics. For megasonic cleaning processes the minimum surface etching required for complete nitride particle removal is significantly lower (between 3–12Å) than for a non-megasonic process. The exact 'threshold' for surface etching will depend on the chemical nature of the particle/surface and the megasonics power. Megasonics energy does not appear to enhance chemical etching of the substrate, at least for silicon oxide substrates, however, it significantly improves particle removal. This data suggests that the particle removal process can benefit from both a thermally activated component (etching) as well as an acoustic component (cavitation/ acoustic streaming).

Acoustic Field Analysis of a T Type Waveguide in Single Wafer Megasonic Cleaning and its Effect on Particle Removal

2007 ◽  
Vol 134 ◽  
pp. 229-232 ◽  
Author(s):  
Yang Lae Lee ◽  
Eui Su Lim ◽  
Kook Jin Kang ◽  
Hyun Se Kim ◽  
Tae Gon Kim ◽  
...  
Keyword(s):  
Finite Element Method ◽  
Acoustic Pressure ◽  
Field Analysis ◽  
Particle Removal ◽  
Pressure Measurements ◽  
Cleaning Efficiency ◽  
Transverse Waves ◽  
Megasonic Cleaning ◽  
Longitudinal Waves ◽  
Wafer Cleaning

T type megasonic waveguide was analyzed by finite element method (FEM), acoustic pressure measurements and particle removal efficiency for the single wafer cleaning application. Compared to conventional longitudinal waves, a transverse waves were generated in a T type waveguide. Not like longitudinal waves, transverse waves showed changes of direction and phase which increased the cleaning efficiency.

Effect of Ultra-Dilute RCA Cleans on the Integrity of Thin Gate Oxides

1997 ◽  
Vol 477 ◽  
Author(s):  
Tushar Dhayagude ◽  
Weidong Chen ◽  
Mohsen Shenasa ◽  
David Nelms ◽  
Mike Olesen
Keyword(s):  
Surface Roughness ◽  
Removal Efficiency ◽  
Comparative Studies ◽  
Defect Density ◽  
Particle Removal ◽  
Gate Oxides ◽  
Metallic Contamination ◽  
Contamination Removal

ABSTRACTComparative studies on the effect of Ultra-dilute RCA cleans, chemical ratios in excess of 300:1, and Dilute RCA cleans, chemical ratios around 50:1, on the integrity of thin gate oxides have been performed. Ultra-dilute RCA chemistries have shown particle removal efficiency, metallic contamination removal, surface roughness, Qbd, BVox and defect density equivalent to those obtained using dilute RCA chemistries. Furthermore ultra-dilute chemistries use less chemical leading to shorter rinse times and thus increased throughput as compared to the dilute RCA chemistries.

Effect of SC-1 Process Parameters on Particle Removal and Surface Metallic Contamination

1995 ◽  
Vol 386 ◽  
Author(s):  
R. Mark Hall ◽  
John J. Rosato ◽  
Taura Jarvis ◽  
Thad Parry ◽  
Paul G. Lindquist
Keyword(s):  
Surface Roughness ◽  
Removal Efficiency ◽  
Process Parameters ◽  
Etch Rate ◽  
Bath Temperature ◽  
Process Conditions ◽  
Particle Removal ◽  
Removal Efficiencies ◽  
Contamination Levels ◽  
Better Than

ABSTRACTThe effect of bath temperature, megasonic power, and NH4-OH:H2O ratio are studied for particle removal efficiency, surface roughness, and surface Fe concentration in SC-1 cleaning solutions. Experimental results are presented which show removal efficiencies better than 97% on bare silicon wafers for optimized process conditions. These results are related to the etch rate of thermal oxides and a model is developed for reducing surface roughness and minimizing Fe contamination levels while maximizing particle removal efficiency.

Study of the Dynamics of Local Particle Removal Efficiencies Using Localized Haze Maps

2007 ◽  
Vol 134 ◽  
pp. 233-236 ◽  
Author(s):  
Tom Janssens ◽  
Frank Holsteyns ◽  
Karine Kenis ◽  
Sophia Arnauts ◽  
Twan Bearda ◽  
...  
Keyword(s):  
Removal Efficiency ◽  
Nano Particles ◽  
Particle Removal ◽  
Megasonic Cleaning ◽  
Device Structures ◽  
Removal Efficiencies

The local particle removal efficiency (PRE) of nano particles in megasonic cleaning experiments is studied. This approach makes it possible to quantify non uniform cleaning effects over the wafer and to look into the dynamics of particle removal at different areas on the wafer. A direct correlation between PRE and megasonic induced damage of device structures demonstrates that a considerable amount of damage is already formed at less efficiently cleaned areas of the wafer.

Fine Particle Removal Using High Frequency Acoustic Streaming

1997 ◽  
Author(s):  
Ahmed A. Busnaina
Keyword(s):  
Removal Efficiency ◽  
High Frequency ◽  
Acoustic Streaming ◽  
Input Power ◽  
Polystyrene Latex ◽  
Maximum Power ◽  
Solution Temperature ◽  
Particle Removal ◽  
Megasonic Cleaning ◽  
Particulate Contamination

Abstract Liquid-based cleaning is extensively used in the semiconductor and other industries affected by contamination for the removal of particulate contamination. One of the widely used wet-cleaning processes is the megasonic cleaning. The megasonics term is used in industry to refer to frequencies near 1 MHZ. Megasonic cleaning techniques used today in industry were first presented by RCA scientists [1,6,7]. McQueen [4,5] identified the effect of the acoustic boundary layer and its role in the removal of small particles at high frequency. Kashkoush, Busnaina et al [8–11] studied ultrasonic and megasonic particle removal, focusing on the effects of acoustic streaming. They showed that removal percentage increased with power. Their results also indicated different removal efficiencies for polystyrene latex (PSL), silica (SiO2) and silicon nitride (Si3 N4) particles. Megasonic cleaning using SC1 and SC2 chemistry has been shown to be very effective by Syverson, et. al. [12]. They also showed that the removal efficiency increased with power up to a 150 W (maximum power available). Wang et al [13] also showed that power had the greatest influence on the removal efficiency up to a maximum power available (150 W). These results are consistent with what was observed by Kashkoush, Busnaina and Gale [12,13]. However, Gale and Busnaina [14–17], using higher power megasonics up to 800 W, showed that the highest removal efficiency occurs at an optimum power (500–600 W) above which it decreases slightly. They also showed that megasonic input power has the greatest influence on particle removal efficiency as compared to solution temperature, both in water and in SC1 solution. They also showed that SC1 removes particles more efficiently than DI water, particularly at lower megasonic powers. But they also showed that it was still possible to achieve 100% removal in DI water under the proper conditions.

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