Impact of Re-Gasified Water on Megasonic Cleaning

2007 ◽  
Vol 134 ◽  
pp. 217-220 ◽  
Author(s):  
Boon Cheng Goh ◽  
Felicia Goh ◽  
Christopher Lim ◽  
Zainab Ismail ◽  
Mei Sheng Zhou
Keyword(s):  
Removal Efficiency ◽  
Particle Removal ◽  
Megasonic Cleaning ◽  
Cavitation Activity

Megasonic cleaning using de-gassed water (less than 2ppm N2, O2, CO2) in a 300mm batch immersion tool often does not give optimal particle performance, with particle streaks and clusters added onto the wafer, and low particle removal efficiency (PRE). When water was re-gasified with N2, the resultant stable cavitation activity reduced particle adders and increased PRE. With N2 concentration increased to just above 5ppm, number of particle adders decreased by three folds. Optimal particle performance could be obtained by operating at an N2 level close to saturation.

High Efficiency Single Wafer Cleaning for Wafer Bonding-Based 3D Integration Applications

2012 ◽  
Vol 187 ◽  
pp. 269-272 ◽  
Author(s):  
Don Dussault ◽  
F. Fournel ◽  
V. Dragoi
Keyword(s):  
Removal Efficiency ◽  
Wafer Bonding ◽  
High Efficiency ◽  
Current Work ◽  
Particle Removal ◽  
3D Integration ◽  
Production Scale ◽  
Megasonic Cleaning ◽  
Wafer Cleaning ◽  
Transducer Design

Current work describes development, testing and verification of a single wafer megasonic cleaning method utilizing a transducer design that meets the extreme particle neutrality, Particle Removal Efficiency (PRE), and repeatability requirements of production scale wafer bonding and other applications requiring extremely low particle levels.

Particle Removal Efficiency and Damage Analysis on Silicon Wafers after Megasonic Cleaning in Solvents

2009 ◽  
Vol 23 (12) ◽  
pp. 1709-1721 ◽  
Author(s):  
Francesca Barbagini ◽  
Sandip Halder ◽  
Tom Janssens ◽  
Karine Kenis ◽  
Kurt Wostyn ◽  
...  
Keyword(s):  
Removal Efficiency ◽  
Silicon Wafers ◽  
Damage Analysis ◽  
Particle Removal ◽  
Megasonic Cleaning

SI3N4 Particle Removal Efficiency Study

1997 ◽  
Vol 477 ◽  
Author(s):  
Jane Qian Liu ◽  
Carolyn Lee ◽  
Joseph M. Rosamilia ◽  
Tom Boone ◽  
Veronica Czitrom ◽  
...  
Keyword(s):  
Removal Efficiency ◽  
Defect Density ◽  
Bath Temperature ◽  
Solution Chemistry ◽  
Particle Removal ◽  
Megasonic Cleaning ◽  
Wafer Cleaning ◽  
Particle Contamination ◽  
The Impact ◽  
Improve Device

ABSTRACTControlling particle contamination in wafer cleaning is important to reduce defect density and improve device performance and yield. In this study, a screening experiment was employed to evaluate particle removal efficiency among different cleanings, including FSI BCLN, bench rinse and dry only, bench SC1/megasonic only, bench RCA cleaning, and bench RCA-based cleaning. To optimize particle removal efficiency in RCA-based cleaning, a design of experiment (DOE) has been done to investigate the impact of SC1/megasonic cleaning on Si3N4 particle removal efficiency. Bath temperature, megasonic power, and solution chemistry of SCI bath were evaluated. The removal efficiency in relations to particle sizes was also investigated

Study of the Dynamics of Local Particle Removal Efficiencies Using Localized Haze Maps

2007 ◽  
Vol 134 ◽  
pp. 233-236 ◽  
Author(s):  
Tom Janssens ◽  
Frank Holsteyns ◽  
Karine Kenis ◽  
Sophia Arnauts ◽  
Twan Bearda ◽  
...  
Keyword(s):  
Removal Efficiency ◽  
Nano Particles ◽  
Particle Removal ◽  
Megasonic Cleaning ◽  
Device Structures ◽  
Removal Efficiencies

The local particle removal efficiency (PRE) of nano particles in megasonic cleaning experiments is studied. This approach makes it possible to quantify non uniform cleaning effects over the wafer and to look into the dynamics of particle removal at different areas on the wafer. A direct correlation between PRE and megasonic induced damage of device structures demonstrates that a considerable amount of damage is already formed at less efficiently cleaned areas of the wafer.

Fine Particle Removal Using High Frequency Acoustic Streaming

1997 ◽  
Author(s):  
Ahmed A. Busnaina
Keyword(s):  
Removal Efficiency ◽  
High Frequency ◽  
Acoustic Streaming ◽  
Input Power ◽  
Polystyrene Latex ◽  
Maximum Power ◽  
Solution Temperature ◽  
Particle Removal ◽  
Megasonic Cleaning ◽  
Particulate Contamination

Abstract Liquid-based cleaning is extensively used in the semiconductor and other industries affected by contamination for the removal of particulate contamination. One of the widely used wet-cleaning processes is the megasonic cleaning. The megasonics term is used in industry to refer to frequencies near 1 MHZ. Megasonic cleaning techniques used today in industry were first presented by RCA scientists [1,6,7]. McQueen [4,5] identified the effect of the acoustic boundary layer and its role in the removal of small particles at high frequency. Kashkoush, Busnaina et al [8–11] studied ultrasonic and megasonic particle removal, focusing on the effects of acoustic streaming. They showed that removal percentage increased with power. Their results also indicated different removal efficiencies for polystyrene latex (PSL), silica (SiO2) and silicon nitride (Si3 N4) particles. Megasonic cleaning using SC1 and SC2 chemistry has been shown to be very effective by Syverson, et. al. [12]. They also showed that the removal efficiency increased with power up to a 150 W (maximum power available). Wang et al [13] also showed that power had the greatest influence on the removal efficiency up to a maximum power available (150 W). These results are consistent with what was observed by Kashkoush, Busnaina and Gale [12,13]. However, Gale and Busnaina [14–17], using higher power megasonics up to 800 W, showed that the highest removal efficiency occurs at an optimum power (500–600 W) above which it decreases slightly. They also showed that megasonic input power has the greatest influence on particle removal efficiency as compared to solution temperature, both in water and in SC1 solution. They also showed that SC1 removes particles more efficiently than DI water, particularly at lower megasonic powers. But they also showed that it was still possible to achieve 100% removal in DI water under the proper conditions.

Scalable Particle Removal for sub-5 nm Nodes

2021 ◽  
Vol 314 ◽  
pp. 222-227
Author(s):  
Yukifumi Yoshida ◽  
Katsuya Akiyama ◽  
Song Zhang ◽  
Dai Ueda ◽  
Masaki Inaba ◽  
...  
Keyword(s):  
Polymer Film ◽  
Removal Efficiency ◽  
Particle Removal ◽  
Feature Size ◽  
Megasonic Cleaning ◽  
3D Structures ◽  
High Particle ◽  
Removal Technology ◽  
Induce Pattern ◽  
Cleaning Methods

Wet cleaning has become challenging as the feature size of semiconductor devices decreased to sub-5 nm nodes. One of the key challenges is removing various types and sizes of particles and contamination from complex and fragile 3D structures without pattern damage and film loss. Conventional physical cleaning methods, such as dual-fluid spray or megasonic cleaning, are being used for the particle removal process. However, in advanced device nodes, these methods induce pattern damage and film loss. In this paper, we describe a novel particle removal technology called Nanolift which uses a polymer film consisting of two organic resins with different functions and achieved high particle removal efficiency on various types and sizes of particles with no pattern damage and minimum film loss.

The Removal of Silica Particles from Micron Wide Trenches by Megasonic Cleaning

2007 ◽  
Vol 134 ◽  
pp. 221-224 ◽  
Author(s):  
Kurt Wostyn ◽  
Vincent Quenette ◽  
Guy Vereecke ◽  
Paul W. Mertens
Keyword(s):  
Removal Efficiency ◽  
T Test ◽  
Particle Removal ◽  
Patterned Substrates ◽  
Megasonic Cleaning ◽  
Patterned Wafers ◽  
Ic Manufacturing ◽  
Layer Deposition ◽  
Removal Efficiencies ◽  
High Yields

In order to obtain high yields during IC manufacturing, particles - added during layer deposition, etching … - have to be removed. In order to meet the stringent requirements set by the ITRS roadmap, this cleaning has to occur with minimal substrate etching. This necessitates the use of physically-assisted particle-removal techniques, e.g. megasonic cleaning. These methods are usually evaluated on blanket wafers. However, many cleaning steps occur on patterned wafers. The goal of this paper is to investigate the particle removal efficiency (PRE) for patterned substrates compared to blanket wafers. A full-wafer contamination and detection protocol was developed to evaluate the removal efficiencies of micron-wide trenches. The student-t test reveals a significantly lower PRE for 1μm wide by 2.2 μm deep trenches versus a blanket wafer for megasonic cleaning. This is relevant for STI cleaning and cleaning of dielectric trenches in damascene patterning.

Particle removal from semiconductor wafers by megasonic cleaning

1996 ◽  
Vol 27 ◽  
pp. S427-S428 ◽  
Author(s):  
T.H. Kuehn ◽  
D.B. Kittelson ◽  
Y. Wu ◽  
R. Gouk
Keyword(s):  
Particle Removal ◽  
Megasonic Cleaning
Sign in / Sign up

Export Citation Format

Share Document