Thermoelectric Transport in Superlattices

1997 ◽  
Vol 478 ◽  
Author(s):  
T. L. Reinecke ◽  
D. A. Broido
Keyword(s):  
Exact Solution ◽  
Figure Of Merit ◽  
Phonon Scattering ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Thermoelectric Transport ◽  
Barrier Layers ◽  
Thermoelectric Transport Properties ◽  
Carrier Tunneling

AbstractThe thermoelectric transport properties of superlattices have been studied using an exact solution of the Boltzmann equation. The role of heat transport along the barrier layers, of carrier tunneling through the barriers, of valley degeneracy and of the well width and energy dependences of the carrier-phonon scattering rates on the thermoelectric figure of merit are given. Calculations are given for Bi2Te3 and for PbTe, and the results of recent experiments are discussed.

Enhanced thermoelectric transport properties of n-type InSe due to the emergence of the flat band by Si doping

2019 ◽  
Vol 6 (6) ◽  
pp. 1475-1481 ◽  
Author(s):  
Kyu Hyoung Lee ◽  
Min-Wook Oh ◽  
Hyun-Sik Kim ◽  
Weon Ho Shin ◽  
Kimoon Lee ◽  
...  
Keyword(s):  
Transport Properties ◽  
Figure Of Merit ◽  
Flat Band ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Thermoelectric Transport ◽  
Si Doping ◽  
Thermoelectric Transport Properties ◽  
Si Doped

An improved thermoelectric figure of merit (zT) of 0.14 at 795 K was obtained in 7% Si doped InSe due to the emergence of the flat band.

scholarly journals Measuring thermoelectric transport properties of materials

2015 ◽  
Vol 8 (2) ◽  
pp. 423-435 ◽  
Author(s):  
Kasper A. Borup ◽  
Johannes de Boor ◽  
Heng Wang ◽  
Fivos Drymiotis ◽  
Franck Gascoin ◽  
...  
Keyword(s):  
Transport Properties ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Thermoelectric Transport ◽  
Thermoelectric Transport Properties ◽  
The Common ◽  
Properties Of Materials

In this review we discuss considerations regarding the common techniques used for measuring thermoelectric transport properties necessary for calculating the thermoelectric figure of merit, zT.

Influence of multi-sintering on the thermoelectric properties of Bi2Sr2Co2Oy ceramics

2019 ◽  
Vol 34 (02) ◽  
pp. 2050019 ◽  
Author(s):  
Y. Zhang ◽  
M. M. Fan ◽  
C. C. Ruan ◽  
Y. W. Zhang ◽  
X.-J. Li ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Phonon Scattering ◽  
Sintered Sample ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
The Third ◽  
Ceramic Samples ◽  
Optimum Formula

[Formula: see text] ceramic samples have a structure similar to phonon glass electronic crystals, and their thermoelectric properties can be effectively adjusted through repeated grinding and sintering. The results show that multi-sintering can make their grain refined and increase their grain boundary, which will effectively increase density and phonon scattering. Finally, multi-sintering can reduce the resistivity and thermal conductivity, thus obviously improve thermoelectric figure of merit [Formula: see text] of [Formula: see text]. The optimum [Formula: see text] value of 0.26 is achieved at 923 K by the third sintered sample.

Thermoelectric Transport Properties of SrTiO3 Doped with Pm

2018 ◽  
Vol 280 ◽  
pp. 3-8 ◽  
Author(s):  
A. A. Adewale ◽  
Abdullah Chik ◽  
R. Mohd Zaki ◽  
F. Che Pa ◽  
Yeoh Chow Keat ◽  
...  
Keyword(s):  
Transport Properties ◽  
Figure Of Merit ◽  
Density Functional ◽  
Generalized Gradient ◽  
Thermoelectric Figure ◽  
Functional Theory ◽  
Thermoelectric Transport ◽  
Generalized Gradient Approximation ◽  
High Contribution ◽  
Thermoelectric Transport Properties

Thermoelectric properties of SrTiO3doped with 8%Pm at Sr site were investigated using density functional theory and generalized gradient approximation. The transport properties were calculated based on BoltzTraP code at temperature range 300-1200K. In electronic properties study Fermi level were shifted to conduction band region due to high contribution 4f orbital in Pm. Present study thermoelectric figure of merit ZT result was 0.395 at 300K and 0.638 at 1200K. This shows a considerably good value of ZT for SrTiO3as n-type oxide. Compared to previous work, ZT were at the range of 0.21 - 0.37 for temperature of 300-1000K in Pr, La, Ta and Ho.

Enhanced thermoelectric figure of merit in SiGe alloy nanowires by boundary and hole-phonon scattering

2011 ◽  
Vol 110 (7) ◽  
pp. 074317 ◽  
Author(s):  
Julio A. Martinez ◽  
Paula P. Provencio ◽  
S. T. Picraux ◽  
John P. Sullivan ◽  
B. S. Swartzentruber
Keyword(s):  
Figure Of Merit ◽  
Phonon Scattering ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Sige Alloy ◽  
Alloy Nanowires

Surface-dominated transport and enhanced thermoelectric figure of merit in topological insulator Bi1.5Sb0.5Te1.7Se1.3

Nanoscale ◽  
2015 ◽  
Vol 7 (2) ◽  
pp. 518-523 ◽  
Author(s):  
Te-Chih Hsiung ◽  
Chung-Yu Mou ◽  
Ting-Kuo Lee ◽  
Yang-Yuan Chen
Keyword(s):  
Topological Insulator ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Bulk Specimen ◽  
Thermoelectric Transport ◽  
Transport Measurements

Thermoelectric transport measurements of topological insulator Bi1.5Sb0.5Te1.7Se1.3 nanowires reveal an enhancement of the thermoelectric figure of merit as compared with the bulk specimen.

Quantum Confinement Effects on the Thermoelectric Figure of Merit in Si/Si1−xGex System

1997 ◽  
Vol 478 ◽  
Author(s):  
X. Sun ◽  
M. S. Dresselhaus ◽  
K. L. Wang ◽  
M. O. Tanner
Keyword(s):  
Quantum Well ◽  
Quantum Confinement ◽  
Figure Of Merit ◽  
Thin Layers ◽  
Thermoelectric Figure Of Merit ◽  
Barrier Width ◽  
Confinement Effects ◽  
Thermoelectric Figure ◽  
Barrier Layers ◽  
Quantum Confinement Effects

AbstractThe Si/Sil−xGex quantum well system is attractive for high temperature thermoelectric applications and for demonstration of proof-of-principle for enhanced thermoelectric figure of merit Z, since the interfaces and carrier densities can be well controlled in this system. We report here theoretical calculations for Z in this system, and results from theoretical modeling of quantum confinement effects in the presence of δ-doping within the barrier layers. The δ-doping layers are introduced by growing very thin layers of wide band gap materials within the barrier layers in order to increase the effective barrier height within the barriers and thereby reduce the barrier width necessary for the quantum confinement of carriers within the quantum well. The overall figure of merit is thereby enhanced due to the reduced barrier width and hence reduced thermal conductivity, K. The δ-doping should further reduce K in the barriers by introducing phonon scattering centers within the barrier region. The temperature dependence of Z for Si quantum wells is also discussed.

Thermoelectric Properties of the Half-Heusler Compound (Zr,Hf)(Ni,Pd)Sn

1998 ◽  
Vol 545 ◽  
Author(s):  
V. M. Browning ◽  
S. J. Poon ◽  
T. M. Tritt ◽  
A. L Pope ◽  
S. Bhattacharya ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Transport Properties ◽  
Figure Of Merit ◽  
Phonon Scattering ◽  
Lattice Contribution ◽  
Thermoelectric Transport ◽  
Heusler Compound ◽  
Chemical Substitution ◽  
Seebeck Coefficients ◽  
Thermoelectric Transport Properties

AbstractRecent measurements of the thermoelectric transport properties of a series of the half- Heusler compound ZrNiSn are presented. These materials are known to be bandgap intermetallic compounds with relatively large Seebeck coefficients and semimetallic to semiconducting transport properties. This makes them attractive for study as potential candidates for thermoelectric applications. In this study, trends in the thermoelectric power, electrical conductivity and thermal conductivity are examined as a function of chemical substitution on the various fcc sub-lattices that comprise the half-Heusler crystal structure. These results suggest that the lattice contribution to the thermal conductivity may be reduced by increasing the phonon scattering via chemical substitution. The effects of these substitutions on the overall power factor and figure-of-merit will also be discussed.

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