Thermoelectric Properties of the Half-Heusler Compound (Zr,Hf)(Ni,Pd)Sn

1998 ◽  
Vol 545 ◽  
Author(s):  
V. M. Browning ◽  
S. J. Poon ◽  
T. M. Tritt ◽  
A. L Pope ◽  
S. Bhattacharya ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Transport Properties ◽  
Figure Of Merit ◽  
Phonon Scattering ◽  
Lattice Contribution ◽  
Thermoelectric Transport ◽  
Heusler Compound ◽  
Chemical Substitution ◽  
Seebeck Coefficients ◽  
Thermoelectric Transport Properties

AbstractRecent measurements of the thermoelectric transport properties of a series of the half- Heusler compound ZrNiSn are presented. These materials are known to be bandgap intermetallic compounds with relatively large Seebeck coefficients and semimetallic to semiconducting transport properties. This makes them attractive for study as potential candidates for thermoelectric applications. In this study, trends in the thermoelectric power, electrical conductivity and thermal conductivity are examined as a function of chemical substitution on the various fcc sub-lattices that comprise the half-Heusler crystal structure. These results suggest that the lattice contribution to the thermal conductivity may be reduced by increasing the phonon scattering via chemical substitution. The effects of these substitutions on the overall power factor and figure-of-merit will also be discussed.

Thermoelectric Transport Properties of SrTiO3 Doped with Pm

2018 ◽  
Vol 280 ◽  
pp. 3-8 ◽  
Author(s):  
A. A. Adewale ◽  
Abdullah Chik ◽  
R. Mohd Zaki ◽  
F. Che Pa ◽  
Yeoh Chow Keat ◽  
...  
Keyword(s):  
Transport Properties ◽  
Figure Of Merit ◽  
Density Functional ◽  
Generalized Gradient ◽  
Thermoelectric Figure ◽  
Functional Theory ◽  
Thermoelectric Transport ◽  
Generalized Gradient Approximation ◽  
High Contribution ◽  
Thermoelectric Transport Properties

Thermoelectric properties of SrTiO3doped with 8%Pm at Sr site were investigated using density functional theory and generalized gradient approximation. The transport properties were calculated based on BoltzTraP code at temperature range 300-1200K. In electronic properties study Fermi level were shifted to conduction band region due to high contribution 4f orbital in Pm. Present study thermoelectric figure of merit ZT result was 0.395 at 300K and 0.638 at 1200K. This shows a considerably good value of ZT for SrTiO3as n-type oxide. Compared to previous work, ZT were at the range of 0.21 - 0.37 for temperature of 300-1000K in Pr, La, Ta and Ho.

Enhanced thermoelectric transport properties of n-type InSe due to the emergence of the flat band by Si doping

2019 ◽  
Vol 6 (6) ◽  
pp. 1475-1481 ◽  
Author(s):  
Kyu Hyoung Lee ◽  
Min-Wook Oh ◽  
Hyun-Sik Kim ◽  
Weon Ho Shin ◽  
Kimoon Lee ◽  
...  
Keyword(s):  
Transport Properties ◽  
Figure Of Merit ◽  
Flat Band ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Thermoelectric Transport ◽  
Si Doping ◽  
Thermoelectric Transport Properties ◽  
Si Doped

An improved thermoelectric figure of merit (zT) of 0.14 at 795 K was obtained in 7% Si doped InSe due to the emergence of the flat band.

Thermoelectric Transport in Sb2Te3/Bi2Te3 Quantum Dot Nanocomposites

2011 ◽  
Author(s):  
J. Zhou ◽  
R. G. Yang
Keyword(s):  
Quantum Dot ◽  
Transport Properties ◽  
High Efficiency ◽  
Phonon Scattering ◽  
Transport Model ◽  
Binding Model ◽  
Thermoelectric Transport ◽  
Bottleneck Effect ◽  
Phonon Bottleneck ◽  
Thermoelectric Transport Properties

We investigate the thermoelectric transport properties of Sb2Te3/Bi2Te3 quantum dot nanocomposites with spherical Sb2Te3 quantum dots arrays embedded in Bi2Te3 matrix through a two-channel transport model. In this model, the transport of quantum-confined electrons through the hopping mechanism is studied by tight-binding model together with Kubo formula and Green’s function method. The formation of minibands due to the quantum confinement and the phonon-bottleneck effect on carrier-phonon scattering are considered. The transport of bulk-like electrons is studied by Boltzmann-transport-equation-based model. We consider the intrinsic carrier scatterings as well as the carrier-interface scattering of these bulk-like electrons. Thermoelectric transport properties are studied with different quantum dot sizes, inter-dot distances, doping concentrations, and temperatures. We find that electrical conductivity and Seebeck coefficient can be enhanced simultaneously in Sb2Te3/Bi2Te3 quantum dot nanocomposites because of the formation of minibands and the phonon-bottleneck effect on carrier-phonon scattering. Our results could shed some light on the design of high-efficiency thermoelectric materials.

Effect of doping indium into a Bi2Te3 matrix on the microstructure and thermoelectric transport properties

RSC Advances ◽  
2016 ◽  
Vol 6 (65) ◽  
pp. 60736-60740 ◽  
Author(s):  
Xin Guo ◽  
Jieming Qin ◽  
Xiaoling Lv ◽  
Le Deng ◽  
Xiaopeng Jia ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Transport Properties ◽  
Lattice Thermal Conductivity ◽  
Textural Features ◽  
Thermoelectric Transport ◽  
Thermoelectric Transport Properties ◽  
Effect Of Doping

Doping In into a Bi2Te3 matrix can significantly transform textural features and decrease the lattice thermal conductivity.

Thermoelectric Transport in Superlattices

1997 ◽  
Vol 478 ◽  
Author(s):  
T. L. Reinecke ◽  
D. A. Broido
Keyword(s):  
Exact Solution ◽  
Figure Of Merit ◽  
Phonon Scattering ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Thermoelectric Transport ◽  
Barrier Layers ◽  
Thermoelectric Transport Properties ◽  
Carrier Tunneling

AbstractThe thermoelectric transport properties of superlattices have been studied using an exact solution of the Boltzmann equation. The role of heat transport along the barrier layers, of carrier tunneling through the barriers, of valley degeneracy and of the well width and energy dependences of the carrier-phonon scattering rates on the thermoelectric figure of merit are given. Calculations are given for Bi2Te3 and for PbTe, and the results of recent experiments are discussed.

Tuned thermoelectric transport properties of Co2.0Sb1.6Se2.4 and Co2.0Sb1.5M0.1Se2.4 (M=Zn, Sn): Compounds with high phonon scattering

2017 ◽  
Vol 729 ◽  
pp. 303-312 ◽  
Author(s):  
N. Karthikeyan ◽  
Sivaprasad Ghanta ◽  
Samiran Misra ◽  
G. Jaiganesh ◽  
Partha Pratim Jana ◽  
...  
Keyword(s):  
Transport Properties ◽  
Phonon Scattering ◽  
Thermoelectric Transport ◽  
Thermoelectric Transport Properties

High-temperature thermoelectric transport behavior of the Al/γ-Al2O3interface: impact of electron and phonon scattering at nanoscale metal–ceramic contacts

2018 ◽  
Vol 20 (21) ◽  
pp. 14513-14524 ◽  
Author(s):  
Pabitra Narayan Samanta ◽  
Jerzy Leszczynski
Keyword(s):  
High Temperature ◽  
Transport Properties ◽  
Phonon Scattering ◽  
Thermoelectric Transport ◽  
Transport Behavior ◽  
Ballistic Electron ◽  
Metal Ceramic ◽  
Thermoelectric Transport Properties

Thermoelectric transport properties of the Al/γ-Al2O3interface have been assessed from the ballistic electron and phonon transmission at the nanoscale contacts.

scholarly journals Crystal Structure and Thermoelectric Transport Properties of As-Doped Layered Pnictogen Oxyselenides NdO0.8F0.2Sb1−xAsxSe2

Materials ◽  
2020 ◽  
Vol 13 (9) ◽  
pp. 2164
Author(s):  
Kota Morino ◽  
Yosuke Goto ◽  
Akira Miura ◽  
Chikako Moriyoshi ◽  
Yoshihiro Kuroiwa ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thermal Conductivity ◽  
Transport Properties ◽  
High Performance ◽  
Lattice Parameter ◽  
First Principles Calculation ◽  
X Ray Diffraction ◽  
Thermoelectric Transport ◽  
Thermoelectric Transport Properties ◽  
Axis Length

We report the synthesis and thermoelectric transport properties of As-doped layered pnictogen oxyselenides NdO0.8F0.2Sb1−xAsxSe2 (x ≤ 0.6), which are predicted to show high-performance thermoelectric properties based on first-principles calculation. The crystal structure of these compounds belongs to the tetragonal P4/nmm space group (No. 129) at room temperature. The lattice parameter c decreases with increasing x, while a remains almost unchanged among the samples. Despite isovalent substitution of As for Sb, electrical resistivity significantly rises with increasing x. Very low thermal conductivity of less than 0.8 Wm−1K−1 is observed at temperatures between 300 and 673 K for all the examined samples. For As-doped samples, the thermal conductivity further decreases above 600 K. Temperature-dependent synchrotron X-ray diffraction indicates that an anomaly also occurs in the c-axis length at around 600 K, which may relate to the thermal transport properties.

scholarly journals Measuring thermoelectric transport properties of materials

2015 ◽  
Vol 8 (2) ◽  
pp. 423-435 ◽  
Author(s):  
Kasper A. Borup ◽  
Johannes de Boor ◽  
Heng Wang ◽  
Fivos Drymiotis ◽  
Franck Gascoin ◽  
...  
Keyword(s):  
Transport Properties ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Thermoelectric Transport ◽  
Thermoelectric Transport Properties ◽  
The Common ◽  
Properties Of Materials

In this review we discuss considerations regarding the common techniques used for measuring thermoelectric transport properties necessary for calculating the thermoelectric figure of merit, zT.

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