The First Nitride Laser Diode on Silicon Carbide

AbstractThis paper reports the events at NCSU leading up to and including those of June 5, 1997 which produced the first demonstration of a nitride laser diode on silicon carbide – and the very first nitride laser demonstration outside of Japan. All of the laser diode samples tested at NCSU were designed, grown, and fabricated into cleaved cavity test structures at Cree Research. Laser testing at NCSU consisted of spectral emission versus current measurements, light output power versus current (L-I) measurement, and light output polarization measurements versus current. The first successful laser on silicon carbide emitted at 402.6 nm. Subsequently, lasers displaying outputs ranging from 402.6 to 430.2 have been successfully tested at NCSU.

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Semipolar {202̅1} GaN Edge-Emitting Laser Diode on Epitaxial Lateral Overgrown Wing

Crystals ◽

10.3390/cryst11121563 ◽

2021 ◽

Vol 11 (12) ◽

pp. 1563

Author(s):

Srinivas Gandrothula ◽

Haojun Zhang ◽

Pavel Shapturenka ◽

Ryan Anderson ◽

Matthew S. Wong ◽

...

Keyword(s):

Dislocation Density ◽

Output Power ◽

Laser Diode ◽

Laser Diodes ◽

Light Output ◽

Laser Action ◽

Feasibility Studies ◽

Threshold Current ◽

Optical Measurements ◽

Light Output Power

Edge-emitting laser diodes (LDs) were fabricated on a reduced dislocation density epitaxial lateral overgrown (ELO) wing of a semipolar {202̅1} GaN substrate, termed an ELO wing LD. Two types of facet feasibility studies were conducted: (1) “handmade” facets, wherein lifted-off ELO wing LDs were cleaved manually, and (2) facets formed on wafers through reactive ion etching (RIE). Pulsed operation electrical and optical measurements confirmed the laser action in the RIE facet LDs with a threshold current of ~19 kAcm−2 and maximum light output power of 20 mW from a single uncoated facet. Handmade facet devices showed spontaneous, LED-like emission, confirming device layers remain intact after mechanical liftoff.

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Improved Light Output Power of GaN-Based Light-Emitting Diodes Using Double Photonic Quasi-Crystal Patterns

IEEE Electron Device Letters ◽

10.1109/led.2009.2029985 ◽

2009 ◽

Vol 30 (11) ◽

pp. 1152-1154 ◽

Cited By ~ 16

Author(s):

Hung-Wen Huang ◽

Chung-Hsiang Lin ◽

Zhi-Kai Huang ◽

Kang-Yuan Lee ◽

Chang-Chin Yu ◽

...

Keyword(s):

Output Power ◽

Light Emitting Diodes ◽

Light Output ◽

Light Output Power ◽

Light Emitting

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Enhancing Light Output Power of InGaN-Based Light-Emitting Diodes with an Embedded Self-Textured Oxide Mask Structure

Journal of The Electrochemical Society ◽

10.1149/2.071112jes ◽

2011 ◽

Vol 158 (12) ◽

pp. H1242 ◽

Cited By ~ 4

Author(s):

Wen-Yu Lin ◽

Kun-Ching Shen ◽

Ray-Hua Horng ◽

Dong-Sing Wuu

Keyword(s):

Output Power ◽

Light Emitting Diodes ◽

Light Output ◽

Light Output Power ◽

Light Emitting

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Reciprocal Space Mapping of X-Ray Diffraction Intensity of GaN-Based Laser Diodes Grown on GaN Substrates

MRS Proceedings ◽

10.1557/proc-798-y5.40 ◽

2003 ◽

Vol 798 ◽

Cited By ~ 2

Author(s):

K. Tachibana ◽

Y. Harada ◽

S. Saito ◽

S. Nunoue ◽

H. Katsuno ◽

...

Keyword(s):

Output Power ◽

Sapphire Substrate ◽

Light Output ◽

Space Mapping ◽

Reciprocal Space ◽

Epitaxial Layers ◽

X Ray Diffraction ◽

Light Output Power ◽

Reciprocal Space Mapping ◽

X Ray

ABSTRACTCharacterization by reciprocal space mapping of x-ray diffraction (XRD) intensity was carried out for epitaxial layers of GaN-based laser structures on two GaN substrates: GaN substrate and GaN template on sapphire substrate. The difference between these two substrates was shown clearly. The distribution of XRD intensity of the epitaxial layers on GaN substrate was smaller than that of the epitaxial layers on GaN template on sapphire substrate. In the lasers with the epitaxial structure on GaN substrate, the light output power was as high as 200 mW under continuous-wave operation at room temperature. Excellent noise characteristics with relative intensity noise of -132 dB/Hz were also obtained at a low light output power of 3 mW without any high-frequency modulation. These results support that GaN substrates are promising for realizing GaN-based lasers with high performance.

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Improving the light output power of DUV-LED by introducing an intrinsic last quantum barrier interlayer on the high-quality AlN template

Solid-State Electronics ◽

10.1016/j.sse.2017.09.009 ◽

2017 ◽

Vol 138 ◽

pp. 84-88 ◽

Cited By ~ 2

Author(s):

Chia-Lung Tsai ◽

Hsueh-Hsing Liu ◽

Jun-Wei Chen ◽

Chien-Pin Lu ◽

Kazutada Ikenaga ◽

...

Keyword(s):

Output Power ◽

Light Output ◽

Light Output Power ◽

High Quality ◽

Duv Led

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Enhanced light output power of InGaN-based amber LEDs by strain-compensating AlN/AlGaN barriers

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2016.05.023 ◽

2016 ◽

Vol 448 ◽

pp. 105-108 ◽

Cited By ~ 15

Author(s):

Daisuke Iida ◽

Shen Lu ◽

Sota Hirahara ◽

Kazumasa Niwa ◽

Satoshi Kamiyama ◽

...

Keyword(s):

Output Power ◽

Light Output ◽

Light Output Power

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Electroluminescence Properties of Eu-doped GaN-based Light-emitting Diodes Grown by Organometallic Vapor Phase Epitaxy

MRS Proceedings ◽

10.1557/opl.2011.994 ◽

2011 ◽

Vol 1342 ◽

Cited By ~ 11

Author(s):

Atsushi Nishikawa ◽

Naoki Furukawa ◽

Dong-gun Lee ◽

Kosuke Kawabata ◽

Takanori Matsuno ◽

...

Keyword(s):

Layer Thickness ◽

Output Power ◽

Active Layer ◽

Vapor Phase ◽

Light Emitting Diodes ◽

Light Output ◽

Active Layer Thickness ◽

Organometallic Vapor Phase Epitaxy ◽

Light Output Power ◽

Light Emitting

ABSTRACTWe investigated the electroluminescence (EL) properties of Eu-doped GaN-based light-emitting diodes (LEDs) grown by organometallic vapor phase epitaxy (OMVPE). The thickness of the active layer was varied to increase the light output power. With increasing the active layer thickness, the light output power monotonically increased. The maximum light output power of 50 μW was obtained for an active layer thickness of 900 nm with an injected current of 20 mA, which is the highest value ever reported. The corresponding external quantum efficiency was 0.12%. The applied voltage for the LED operation also increased with the active layer thickness due to an increase in the resistance of the LED. Therefore, in terms of power efficiency, the optimized active layer thickness was around 600 nm. These results indicate that the optimization of the LED structure would effectively improve the luminescence properties.

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