Cl2-Based Dry Etching Of The AIGaInN System In Inductively Coupled Plasmas

1997 ◽  
Vol 483 ◽  
Author(s):  
Hyun Cho ◽  
C. B. Vartuli ◽  
C. R. Abernathy ◽  
S. M. Donovan ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Systematic Study ◽  
Etch Rate ◽  
Dry Etching ◽  
The Other ◽  
Pattern Transfer ◽  
Inductively Coupled Plasmas ◽  
Source Power ◽  
Inductively Coupled ◽  
Coupled Plasmas

AbstractCl2-based Inductively Coupled Plamas with low additional dc self-biases(−100V) produce convenient etch rates(500–1500Å.min−1) for GaN, AIN, InN, InAiN and InGaN. A systematic study of the effects of additive gas(Ar, N2, H2), discharge composition and ICP source power and chuck power on etch rate and surface morphology has been performed. The general trends are to go through a maximum in etch rate with percent C12 in the discharge for all three mixtures, and to have an increase(decrease) in etch rate with source power(pressure). Since the etching is strongly ion-assisted, anisotropic pattern transfer is readily achieved. Maximum etch selectivities of approximately 6 for InN over the other nitrides were obtained.

scholarly journals Fluorine-based Inductively Coupled Plasma Etching of α-Ga2O3 Epitaxy Film

2021 ◽  
Vol 59 (2) ◽  
pp. 121-126
Author(s):  
Ji Hun Um ◽  
Byoung Su Choi ◽  
Woo Sik Jang ◽  
Sungu Hwang ◽  
Dae-Woo Jeon ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Inductively Coupled Plasma ◽  
Etch Rate ◽  
Smooth Surface ◽  
Vertical Sidewall ◽  
Source Power ◽  
Inductively Coupled ◽  
Process Pressure ◽  
Coupled Plasmas ◽  
Dry Etch

α-Ga2O3 has the largest bandgap (~5.3 eV) among the five polymorphs of Ga2O3 and is a promising candidate for high power electronic and optoelectronic devices. To fabricate various device structures, it is important to establish an effective dry etch process which can provide practical etch rate, smooth surface morphology and low ion-induced damage. Here, the etch characteristics of α-Ga2O3 epitaxy film were examined in two fluorine-based (CF4/Ar and SF6/Ar) inductively coupled plasmas. Under the same source power, rf chuck power and process pressure, an Ar-rich composition of CF4/Ar and an SF6-rich composition of SF6/Ar produced the highest etch rates. Monotonic increase in the etch rate was observed as the source power and rf chuck power increased in the 2CF4/13Ar discharges, and a maximum etch rate of ~855 Å/min was obtained at a 500 W source power, 250 W rf chuck power, and 2 mTorr pressure. A smooth surface morphology with normalized roughness of less than ~1.38 was achieved in the 2CF4/13Ar and 13SF6/2Ar discharges under most of the conditions examined. The features etched into the α-Ga2O3 layer using a 2CF4/13Ar discharge with 2 mTorr pressure showed good anisotropy with a vertical sidewall profile.

Comparison of Novel Chlorine, Bromine and Iodine Plasma Chemistries for Anisotropic Trench Etching In GaN, InN and Ain

1998 ◽  
Vol 512 ◽  
Author(s):  
Hyun Cho ◽  
T. Maeda ◽  
J. D. MacKenzie ◽  
S. M. Donovan ◽  
C. R. Abemathy ◽  
...  
Keyword(s):  
Pattern Transfer ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Etch Rates ◽  
Coupled Plasmas

ABSTRACTAnisotropic pattern transfer has been performed for GaN, InN and AIN in Cl2/Ar, BI3/Ar and BBr3/Ar Inductively Coupled Plasmas(ICP). Controlled etch rates in the range of 500–1500Å·min−1 are obtained for III-nitride materials in Cl2/Ar chemistry. Etch selectivities of 100:1 were achieved for InN over both GaN and AIN in the BI3 mixtures, while for BBr3 discharges values of 100:1 for InN over AIN and 25:1 for InN over GaN were measured.

High resolution pattern transfer in III-nitrides using BCl3/Ar inductively coupled plasmas

1998 ◽  
Vol 42 (9) ◽  
pp. 1719-1722
Author(s):  
Hyun Cho ◽  
S.M Donovan ◽  
J.D MacKenzie ◽  
C.R Abernathy ◽  
S.J Pearton ◽  
...  
Keyword(s):  
High Resolution ◽  
Pattern Transfer ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Coupled Plasmas

Cl2-based dry etching of the AlGaInN system in inductively coupled plasmas

1998 ◽  
Vol 42 (12) ◽  
pp. 2277-2281 ◽  
Author(s):  
Hyun Cho ◽  
C.B Vartuli ◽  
C.R Abernathy ◽  
S.M Donovan ◽  
S.J Pearton ◽  
...  
Keyword(s):  
Dry Etching ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Coupled Plasmas

Comparison of chlorine- and fluorine-based inductively coupled plasmas for dry etching of InGaZnO4 films

2013 ◽  
Vol 546 ◽  
pp. 136-140 ◽  
Author(s):  
Jong Cheon Park ◽  
Ok Geun Jeong ◽  
Jin Kon Kim ◽  
Young-Hoon Yun ◽  
Stephen J. Pearton ◽  
...  
Keyword(s):  
Dry Etching ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Coupled Plasmas

scholarly journals Inductively Coupled Plasma Etching of III-Nitrides in Cl2/Xe, Cl2/Ar and Cl2/He

1999 ◽  
Vol 4 (S1) ◽  
pp. 763-768
Author(s):  
Hyun Cho ◽  
Y.B. Hahn ◽  
D.C. Hays ◽  
K.B. Jung ◽  
S.M. Donovan ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Inductively Coupled Plasmas ◽  
Source Power ◽  
Strong Function ◽  
Inductively Coupled ◽  
Physical Sputtering ◽  
Etch Rates ◽  
Coupled Plasmas ◽  
Nitrogen Bond

The role of additive noble gases He, Ar and Xe to Cl2-based Inductively Coupled Plasmas for etching of GaN, AlN and InN were examined. The etch rates were a strong function of chlorine concentration, rf chuck power and ICP source power. The highest etch rates for InN were obtained with Cl2/Xe, while the highest rates for AlN and GaN were obtained with Cl2/He. Efficient breaking of the III-nitrogen bond is crucial for attaining high etch rates. The InN etching was dominated by physical sputtering, in contrast to GaN and AlN. In the latter cases, the etch rates were limited by initial breaking of the III-nitrogen bond. Maximum selectivities of ∼ 80 for InN to GaN and InN to AlN were obtained.

Sign in / Sign up

Export Citation Format

Share Document